Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HFE PNP TRANSISTOR Search Results

    HFE PNP TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    HFE PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    small signal transistors

    Abstract: No abstract text available
    Text: 2N3503 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N3503 Tj Notes VCBO hFE max hfe hFE A fT Polarity PNP VCEO 60 VCE Case Style


    Original     		PDF 2N3503 2N3503 O-205AD/TO-39 07-Sep-2010 small signal transistors

    small signal transistors

    Abstract: No abstract text available
    Text: 2N4037 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N4037 Tj 200 hFE max 250 hfe 3.0 Industry Type 2N4037 Notes VCBO 60 hFE A


    Original     		PDF 2N4037 2N4037 O-205AD/TO-39 07-Sep-2010 small signal transistors

    NPN POWER DARLINGTON TRANSISTORS

    Abstract: small signal transistors
    Text: 2N6283 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N6283 Tj 200 hFE max 18K hfe 1000 Industry Type 2N6283 Notes VCBO 80 hFE A


    Original     		PDF 2N6283 2N6283 O-204AA/TO-3 07-Sep-2010 NPN POWER DARLINGTON TRANSISTORS small signal transistors

    mm8006

    Abstract: To206AF small signal transistors
    Text: MM8006 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type MM8006 Tj 200 hFE max hfe Notes VCBO 15 hFE A 1.0 fT 1000 Polarity NPN VCEO


    Original     		PDF MM8006 MM8006 O-206AF/TO-72 07-Sep-2010 To206AF small signal transistors

    small signal transistors

    Abstract: No abstract text available
    Text: A5T2192 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type A5T2192 Tj 150 hFE max 300 hfe 2.5 Industry Type A5T2192 Notes VCBO 60 hFE A


    Original     		PDF A5T2192 A5T2192 O-226AE/TO-92 07-Sep-2010 small signal transistors

    KTA2013F

    Abstract: tfsm package TFSM
    Text: SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.


    Original     		PDF KTA2013F KTC4074F. -100mA, -10mA KTA2013F tfsm package TFSM

    HN4A06J

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J -120V HN4A06J

    HN4A51J

    Abstract: No abstract text available
    Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A51J -120V HN4A51J

    hn3a51f

    Abstract: No abstract text available
    Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN3A51F -120V hn3a51f

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) -50mA QW-R201-045

    TIS92

    Abstract: small signal transistors
    Text: TIS92 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type TIS92 Tj 150 hFE max 300 hfe Notes VCBO 40 hFE A 50 fT Polarity NPN VCEO 40


    Original     		PDF TIS92 TIS92 07-Sep-2010 small signal transistors

    2SA1300

    Abstract: 2sA1300 transistor transistor 2A pnp
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) QW-R201-045 2SA1300 2sA1300 transistor transistor 2A pnp

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		PDF KTA1517S -120V. KTC3911S. -120V, -10mA,

    40250

    Abstract: small signal transistors
    Text: 40250 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 40250 Tj 200 hFE max 100 hfe Notes VCBO 50 hFE A 1.5m fT 1.0 Polarity NPN VCEO


    Original     		PDF O-213AA/TO-66 07-Sep-2010 40250 small signal transistors

    HN4A06J

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J -120V HN4A06J

    Untitled

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J -120V

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 -50mA QW-R208-012

    2SA1300

    Abstract: QW-R208-012
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 QW-R208-012 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A51J

    Untitled

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J

    2SA21

    Abstract: 2SA2154 2SC6026
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		PDF 2SA2154 2SC6026 2SA21 2SA2154 2SC6026

    Untitled

    Abstract: No abstract text available
    Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200 to 700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN3A51F

    HN4A51J

    Abstract: No abstract text available
    Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A51J -120V HN4A51J

    KTA1517

    Abstract: KTC3911 2.T transistor planar
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.


    OCR Scan     		PDF KTA1517 -120V. KTC3911. 270Hz KTA1517 KTC3911 2.T transistor planar