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    HFE MAX 200 Search Results

    HFE MAX 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM611IM/NOPB Rochester Electronics LLC LM611IM - Operational Amplifier, 7000uV Offset-Max, BIPolar Visit Rochester Electronics LLC Buy
    CA3078E Rochester Electronics LLC CA3078 - Operational Amplifier, 1 Func, 5000uV Offset-Max, BIPolar, PDIP8 Visit Rochester Electronics LLC Buy
    OP37AL Rochester Electronics LLC OP37 - Operational Amplifier, 1 Func, 25uV Offset-Max, BIPolar, PBCY8 Visit Rochester Electronics LLC Buy
    OP15GZ Rochester Electronics LLC OP15 - Operational Amplifier, 1 Func, 3800uV Offset-Max, BIPolar, CDIP8 Visit Rochester Electronics LLC Buy
    MC33074AD Rochester Electronics LLC MC33074 - Operational Amplifier, 4 Func, 5000uV Offset-Max, BIPolar, PDSO14 Visit Rochester Electronics LLC Buy
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    HFE MAX 200 Price and Stock

    Analog Devices Inc MAX20034HFEVKIT#

    Power Management IC Development Tools Evkit for MAX20034 2.2Mhz evkit option.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAX20034HFEVKIT#
    • 1 $82.87
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    HFE MAX 200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTA1517S -120V. KTC3911S. -120V, -10mA, PDF

    smd marking ly

    Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).


    Original     		2SC4116 100mA, smd marking ly hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY PDF

    KTC3875S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTA1504S. KTC3875S 100mA, KTC3875S PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. E B L L ・Excellent hFE Linearity ・High hFE: hFE=200～700. D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 3 G A 2 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		-120V. KTA1517S KTC3911S. -120V, -10mA, PDF

    KTA2017

    Abstract: KTC4077
    Text: SEMICONDUCTOR KTA2017 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=-120V. M B M ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). D 3 1 G ・High hFE: hFE=200～700. J A 2 ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTA2017 -120V. KTC4077. 270Hz KTA2017 KTC4077 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		KTC4077 KTA2017. 270Hz PDF

    KTA2017

    Abstract: KTC4077 e6v1
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V Ceo =120V . • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		KTC4077 KTA2017. 270Hz KTA2017 KTC4077 e6v1 PDF

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 PDF

    2SA1049

    Abstract: 2SC2459 transistor 2sc2459
    Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		2SC2459 2SA1049. 2SA1049 2SC2459 transistor 2sc2459 PDF

    2SC2459

    Abstract: No abstract text available
    Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		2SC2459 2SA1049. 2SC2459 PDF

    2SC2459

    Abstract: transistor 2sc2459 2SA1049
    Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) · High DC current gain: hFE = 200~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		2SC2459 2SA1049. 2SC2459 transistor 2sc2459 2SA1049 PDF

    TPT5609

    Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
    Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)


    Original     		2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A PDF

    KTA2014V

    Abstract: KTC4075V
    Text: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ᴌHigh hFE : hFE=70~700.


    Original     		KTC4075V KTA2014V. 270Hz KTA2014V KTC4075V PDF

    KTA2014V

    Abstract: KTC4075V
    Text: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ᴌHigh hFE : hFE=70~700.


    Original     		KTC4075V KTA2014V. 270Hz KTA2014V KTC4075V PDF

    KTA2014V

    Abstract: KTC4075V
    Text: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ・High hFE : hFE=70~700.


    Original     		KTC4075V KTA2014V. 270Hz KTA2014V KTC4075V PDF

    KTA1504S

    Abstract: KTC3875S
    Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌHigh hFE : hFE=70ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTC3875S KTA1504S. 270Hz KTA1504S KTC3875S PDF

    KTA1504S

    Abstract: KTC3875S
    Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTC3875S KTA1504S. 270Hz KTA1504S KTC3875S PDF

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


    Original     		BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 PDF

    SOT23

    Abstract: SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23
    Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100


    Original     		BC850C BC860C BC850CW OT323 BC860CW BC850W BC860W BCF32 BCF29 SOT23 SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23 PDF

    STB205L

    Abstract: No abstract text available
    Text: STB205L PNP Silicon Transistor PIN Connection Descriptions • Suitable for low voltage large current drivers • Excellent hFE Linearity. • Switching Application Features • High hFE : hFE=200~400 • Low collector saturation voltage. : VCE sat =-0.5V(MAX.)


    Original     		STB205L O-92L STB205: KSD-T0D010-001 STB205L PDF

    2n2222 to-92

    Abstract: 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistor 2n2222a data sheet to-92 transistors 458 Transistor BCY58 2N2222 pnp 2n3904 TO-92 2N3904 TO-92 type
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) PNP COMPL. PAGE 2N2222


    Original     		2N2222 2N2907A 2N2222A 2N2369 2N2369A 2N3904 2N3906 2N4401 MPS3906 2n2222 to-92 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistor 2n2222a data sheet to-92 transistors 458 Transistor BCY58 2N2222 pnp 2n3904 TO-92 2N3904 TO-92 type PDF

    BC879 equivalent

    Abstract: BSS51 equivalent Bc880 BSR52 BC875 BC876 BC879 BSR51 bsr60 BSR61
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN MEDIUM-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) PNP COMPL. PAGE


    Original     		BC875 BC876 BC877 BC878 BC879 BC880 BSR50 BSR60 BSR51 BC879 equivalent BSS51 equivalent Bc880 BSR52 BC875 BC876 BC879 BSR51 bsr60 BSR61 PDF

    HN4G01J

    Abstract: RN1103F
    Text: HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1 Small package Dual type High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4G01J 150mA 2SC4837F RN1103F HN4G01J RN1103F PDF

    BC517

    Abstract: BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 125 – PNP COMPL.


    Original     		2N6427 BC517 BC516 BC617 BC618 MPSA13 MPSA63 MPSA14 MPSA64 MPSA25 BC517 BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet PDF