WPD500
Abstract: KTA2017 KTC4077
Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : Vceo=120V. • Excellent Ii f e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE • hFE=200 ~ 700.
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KTC4077
KTA2017.
WPD500
KTA2017
KTC4077
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KTA1517
Abstract: KTC3911 2.T transistor planar
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.
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KTA1517
-120V.
KTC3911.
270Hz
KTA1517
KTC3911
2.T transistor planar
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transistor KTC3199
Abstract: KTA1267 KTC3199 ktc3199 y
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.).
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KTC3199
KTA1267.
transistor KTC3199
KTA1267
KTC3199
ktc3199 y
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KTA2014
Abstract: KTC4075 KTC4075 kec
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4075 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • • • • 1 i High Iife • hFE=70~700.
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KTC4075
KTA2014.
270Hz
KTA2014
KTC4075
KTC4075 kec
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC4077
KTA2017.
270Hz
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KTA2017
Abstract: KTC4077 e6v1
Text: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V Ceo =120V . • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC4077
KTA2017.
270Hz
KTA2017
KTC4077
e6v1
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KTA2017
Abstract: KTC4077
Text: KEC SEMICONDUCTOR KTA2017 TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR PNP TRA N SISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo=-120V. • Excellent Ii f e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFF=200~700.
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KTA2017
-120V.
KTC4077.
-10mA,
270Hz
KTA2017
KTC4077
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KTA1267
Abstract: KTC3199
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1267 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTA1267
KTC3199.
T0-92M
KTA1267
KTC3199
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KTA1267L
Abstract: KTC3199L
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L.
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KTA1267L
KTC3199L.
T0-92M
KTA1267L
KTC3199L
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KTC3199
Abstract: KTA1267 ktC3199 transistor
Text: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC3199
KTA1267.
T0-92M
KTC3199
KTA1267
ktC3199 transistor
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KTA1517
Abstract: KTC3911
Text: _ SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTC3911 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : Vceo=120V. • Excellent Iife Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Ilfe • hFE=200 ~ 700.
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KTC3911
KTA1517.
270Hz
KTA1517
KTC3911
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KTA1517S
Abstract: KTC3911S UA08
Text: SEMICONDUCTOR TECHNICAL DATA KTC3911S EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFF=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC3911S
KTA1517S.
270Hz
KTA1517S
KTC3911S
UA08
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KTA1266
Abstract: KTA1266 transistor KTA1266 GR KTC3198 KTA1266. transistor
Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : hFE 2 =80(Typ.) at VCE=-6V, Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.).
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KTA1266
-150mA
KTC3198.
KTA1266
KTA1266 transistor
KTA1266 GR
KTC3198
KTA1266. transistor
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KTC3198
Abstract: KTA1266 transistor KTC3198
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =100(Typ.) at VCE=6V, Ic=150mA. : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) • Low Noise : NF=ldB(Typ.) at f=lkHz.
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KTC3198
150mA.
KTA1266
270Hz
KTC3198
KTA1266
transistor KTC3198
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of Iif e : hFE 2 =100(Typ.) at V Ce =6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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MARKING U1
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES DIM A B C D E G H J K L M N P • Excellent Iife Linearity : hFE 0.1m A /hFE(2m A )=0.95(Typ.). • High Iife • hFE=70~ 700.
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KTC3875
KTA1504.
MARKING U1
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KTA1266L
Abstract: KTC3198L KTA1266L transistor
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iife Linearity : hFE 2 =80(Typ.) a t V ce= -6V , Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).
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KTA1266L
-150mA
KTC3198L.
150mA
-100mA,
-10mA
30MHz
100Hz,
KTA1266L
KTC3198L
KTA1266L transistor
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of h |.|. : hFE 2 =100(Typ.) at V ce=6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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KTA1504
Abstract: KTC3875
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES DIM A B C D E G H J K L M N P • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Iife : h FE = 70 ~ 7 0 0.
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KTC3875
KTA1504.
270Hz
KTA1504
KTC3875
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KTD2092
Abstract: No abstract text available
Text: KEC SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. KTD2092 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • High hFE : hFE=500~ 1500 IC=0.5A . • Low Collector Saturation :VcE(sat)=0.35V(Max.) (Ic=lA).
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KTD2092
KTD2092
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TRANSISTOR ima
Abstract: KTA1243
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1243 EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 Vce=-2V, Ic=-0.5A . • hFE=70(Min.) (VCe =-2V , Ic=-4A). • Low Collector Saturation Voltage.
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KTA1243
-75mA)
TRANSISTOR ima
KTA1243
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sot89 transistor JB
Abstract: marking JB SOT-89 sot89 marking JB npn transistor sot-89 MARKING AG KTC4377
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain and Excellent h |.|. Linearity : hFEÜ =140~600 VCE=lV, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCe=1V, IC=2A).
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KTC4377
250mm2
sot89 transistor JB
marking JB SOT-89
sot89 marking JB
npn transistor sot-89 MARKING AG
KTC4377
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KTA2014
Abstract: KTC4075 KTC4075 kec
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA2014 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTA2014
KTC4075.
KTA2014
KTC4075
KTC4075 kec
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KTA1504
Abstract: ktc3875 20jr
Text: KTA1504 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTA1504
KTC3875.
KTA1504
ktc3875
20jr
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