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    HF40 Search Results

    HF40 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    ISL71091SEHF40/PROTO Renesas Electronics Corporation 4.096V Radiation Hardened Ultra Low Noise, Precision Voltage Reference Visit Renesas Electronics Corporation
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    HF40 Price and Stock

    United Chemi-Con Inc EKHF401ELL390MJ30S

    CAP ALUM 39UF 20% 400V RADIAL TH
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    DigiKey EKHF401ELL390MJ30S Bulk 2,000 1
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    United Chemi-Con Inc EKHF401ELL680MJ45S

    CAP ALUM 68UF 20% 400V RADIAL TH
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    DigiKey EKHF401ELL680MJ45S Bulk 2,000 1
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    United Chemi-Con Inc EKHF401ELL680MK30S

    CAP ALUM 68UF 20% 400V RADIAL TH
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    DigiKey EKHF401ELL680MK30S Bulk 2,000 1
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    United Chemi-Con Inc EKHF401ELL470MJ35S

    CAP ALUM 47UF 20% 400V RADIAL TH
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    DigiKey EKHF401ELL470MJ35S Bulk 2,000 1
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    TAIYO YUDEN LCXHF4040WKT151MNR

    FIXED INDUCTOR 150UH SMD
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    DigiKey LCXHF4040WKT151MNR Reel 1,400 700
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    LCXHF4040WKT151MNR Digi-Reel 1,400 1
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    LCXHF4040WKT151MNR Cut Tape 1,400 1
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    Mouser Electronics LCXHF4040WKT151MNR 1,400
    • 1 $0.71
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    • 100 $0.317
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    HF40 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HF40000181M AVX High Voltage Ceramic Capacitor Original PDF
    HF40000360M AVX High Voltage Ceramic Capacitor Original PDF
    HF40000360MPY AVX High Voltage Ceramic Capacitor Original PDF
    HF40000360MWH AVX High Voltage Ceramic Capacitor Original PDF
    HF40000750MPY AVX High Voltage Ceramic Capacitor Original PDF
    HF40000750MWH AVX High Voltage Ceramic Capacitor Original PDF
    HF408CH02DJO Hind Rectifiers 200V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH02DKO Hind Rectifiers 200V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH02HJO Hind Rectifiers 200V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH02HKO Hind Rectifiers 200V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH04DJO Hind Rectifiers 400V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH04DKO Hind Rectifiers 400V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH04HJO Hind Rectifiers 400V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH04HKO Hind Rectifiers 400V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH06DJO Hind Rectifiers 600V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH06DKO Hind Rectifiers 600V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH06HJO Hind Rectifiers 600V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH06HKO Hind Rectifiers 600V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH08DJO Hind Rectifiers 800V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF
    HF408CH08DKO Hind Rectifiers 800V V[drm] Max., 408A I[T] Max. Silicon Controlled Rectifier Scan PDF

    HF40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20498 rev.B 2/04 HF40A060ACE Hexfred Die in Wafer Form 600 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20498 HF40A060ACE 150mm, HFA25TB60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20497A rev. B 2/5/04 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497A HF40C120ACE 150mm, HFA16PB120

    HF40A060ACB

    Abstract: HFA25TB60
    Text: PD-2.498 TARGET HF40A060ACB HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 1.6V Max.


    Original     		PDF HF40A060ACB HF40A060ACB HFA25TB60 HFA25TB60

    HFA16PB120

    Abstract: HF40C120ACE
    Text: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497 HF40C120ACE 125mm, HFA16PB120 HFA16PB120 HF40C120ACE

    HF40A060ACE

    Abstract: HFA25TB60
    Text: Preliminary Data Sheet PD-20498 rev.B 2/04 HF40A060ACE Hexfred Die in Wafer Form 600 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20498 HF40A060ACE 22ability, 12-Mar-07 HF40A060ACE HFA25TB60

    HF40D120ACE

    Abstract: IRGC25B120KB
    Text: PD - 93876 HF40D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation


    Original     		PDF HF40D120ACE 125mm 12-Mar-07 HF40D120ACE IRGC25B120KB

    HF40E120ACE

    Abstract: No abstract text available
    Text: PD - 97116 HF40E120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom = 20A VF(typ)= 2.27V @ IF(nom) @ 25°C 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • • • Benchmark Efficiency for Applications above 20KHz


    Original     		PDF HF40E120ACE 20KHz 125mm HF40E120ACE

    HFA16PB120

    Abstract: HF40C120ACB
    Text: Previous Datasheet Index Next Data Sheet PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original     		PDF HF40C120ACB HF40C120ACB HFA16PB120 HFA16PB120

    HF40C120ACE

    Abstract: HFA16PB120
    Text: Preliminary Data Sheet PD-20497A rev. B 2/5/04 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497A HF40C120ACE 12-Mar-07 HF40C120ACE HFA16PB120

    HF40R6H6X10H0.8

    Abstract: No abstract text available
    Text: Ferrite Cores R6 Series Ferrite Bead Cores 6 Holes SHAPES AND DIMENSIONS/ELECTRICAL CHARACTERISTICS 45° 6- øC B øA Dimensions mm øA 6±0.2 6±0.2 Part No. HF40R6H6X10H0.8 HF70R6H6X10H0.8 ∗at 2.5Ts 45° B 10±0.3 10±0.3 TYPICAL ELECTRICAL CHARACTERISTICS


    Original     		PDF HF40R6H6X10H0 HF70R6H6X10H0 100MHz 10MHz 0R6H6X10H0 HF40R6H6X10H0.8

    HF40A060ACE

    Abstract: HFA25TB60
    Text: Preliminary Data Sheet PD-20498 rev.A 11/98 HF40A060ACE Hexfred Die in Wafer Form 600 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20498 HF40A060ACE 125mm, HFA25TB60 HF40A060ACE HFA25TB60

    HF40A060ACB

    Abstract: HFA25TB60
    Text: Previous Datasheet Index Next Data Sheet PD-2.498 TARGET HF40A060ACB HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original     		PDF HF40A060ACB HF40A060ACB HFA25TB60 HFA25TB60

    HF40C120ACE

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PDF PD-20497 HF40C120ACE HFA16PB120 125mm, HF40C120ACE

    HF40D120ACE

    Abstract: IRGC25B120KB
    Text: PD - 93876 HF40D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation


    Original     		PDF HF40D120ACE 125mm IRGC25B120KB HF40D120ACE IRGC25B120KB

    HF40C120ACB

    Abstract: HFA16PB120
    Text: PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.6V Max.


    Original     		PDF HF40C120ACB HF40C120ACB HFA16PB120 HFA16PB120

    mt 15003

    Abstract: HF40 23006 SH 13003 HF70SH21X0 27503 HF57 HF70 10hf40 HF70SH25X1X15
    Text: 1/5 EMC対策用フェライトコア フラットケーブル・フレキシブル基板用 SHシリーズ（角形） 特長 ●フラットケーブル・フレキシブル基板用として一体型と分割 型とを多種類用意しております。また、小スペースに合わせた


    Original     		PDF 600A/m] 000A/m] T20X10X12 HF70SH6X0 HF70SH7X0 HF70SH8X0 HF56SH8X1X10 HF70SH8X1X18 mt 15003 HF40 23006 SH 13003 HF70SH21X0 27503 HF57 HF70 10hf40 HF70SH25X1X15

    HF40MH27X28X9

    Abstract: mh series HF70MH
    Text: Ferrite Cores MH Series For IC and Connector Multiple Holes FEATURES • The MH Series provides simple, effective EMC suppression at terminal pins. Terminal pins that can be inserted include those of DIP type ICs, DIP IC sockets, and grid square type connector


    Original     		PDF HF70MH2 HF40MH2 HF40MH27X28X9 mh series HF70MH

    CK3A

    Abstract: No abstract text available
    Text: Pin Information for the Arria V 5AGTFD3 Device Version 1.0 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Pin Information for the Arria V 5AGXFB1 Device Version 1.5 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0


    Original     		PDF F1517

    Untitled

    Abstract: No abstract text available
    Text: Pin Information for the Arria V 5AGXFB3 Device Version 1.5 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0


    Original     		PDF F1517

    HF55BTS

    Abstract: HF55BHY3 HF55BHY HF70BTL3 HF55BT hf55bhw hf70btl HF55BHW3.5X6 HF55BHW3 HF55BTL3.5X4.5R-AG
    Text: 1/2 003-01 / 20030827 / e9533_bt.fm B Series Ferrite Cores Ferrite Bead Cores Lead B series are easy to handle and are supplied in various materials, shapes and packaging styles to meet for users’ requests. FEATURES MATERIAL CHARACTERISTICS • Appropriate materials and shapes can be selected from various


    Original     		PDF HF55BHW3 HF70BTL3 10MHz 100MHz HF55BTL3 HF55BHY3 HF55BHZ3 HF55BTS HF55BHY HF55BT hf55bhw hf70btl HF55BHW3.5X6 HF55BTL3.5X4.5R-AG

    Untitled

    Abstract: No abstract text available
    Text: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )


    OCR Scan     		PDF HF40A060ACB

    Untitled

    Abstract: No abstract text available
    Text: International l$2R Rectifier TARGET PD'2497 H F 40C 120A C B HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter V fm BVr ! rm Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current


    OCR Scan     		PDF HF40C120ACB

    ta8172

    Abstract: t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors
    Text: File No. 656. RF Power Tran sisto rs Solid State Division 4 .n a 7 fì 40971 30-W and 45-W, 12.5-V, UHF Mobile, Silicon N-P-N Overlay Transistors With Internally Mounted Input-Matching Networks Features: • Internally mounted input " T " matching networks


    OCR Scan     		PDF RCAHF-40 ta8172 t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors