27mhz rf ic
Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf ic
27mhz rf amplifier NPN transistor
27mhz rf amplifier
12v class d amplifier 20W
27mhz transistor
27MHz power amplifier
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Untitled
Abstract: No abstract text available
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:
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NTE236
27MHz,
O220AB
NTE236
O220AB
27MHz
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27mhz rf amplifier
Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf amplifier
27mhz rf ic
27mhz
HF SSB APPLICATIONS
27mhz rf amplifier NPN transistor
HF power amplifier
12v class d amplifier 20W
27mhz transistor
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TEA5101A
Abstract: transistor t8 hf tube cascode B8274 tda3562a crt tube schematic diagram induction heater TEA5031D 5101A-04 29 CRT TV circuits DIAGRAM
Text: APPLICATION NOTE TEA5101A - RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS By Ch. MATHELET SUMMARY Page I I.1 I.2 I.3 I.4 I.4.1. I.4.2. I.4.3. II II.1 II.1.1 II.1.2. II.1.2.1. II.1.2.2. II.2 II.2.1. II.2.2. III III.1 III.1.1. III.1.2. III.1.3.
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TEA5101A
transistor t8
hf tube cascode
B8274
tda3562a
crt tube
schematic diagram induction heater
TEA5031D
5101A-04
29 CRT TV circuits DIAGRAM
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22k potentiometer
Abstract: transistor t8 schematic diagram induction heater TEA5101A gun diode amplifier thomson china tv schematic diagram philips colour television picture tube pin volt 6kw class d circuit diagram schematic hf tube cascode tda3562a
Text: APPLICATION NOTE TEA5101A - RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS By Ch. MATHELET SUMMARY Page I I.1 I.2 I.3 I.4 I.4.1. I.4.2. I.4.3. II II.1 II.1.1 II.1.2. II.1.2.1. II.1.2.2. II.2 II.2.1. II.2.2. III III.1 III.1.1. III.1.2. III.1.3.
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TEA5101A
22k potentiometer
transistor t8
schematic diagram induction heater
gun diode amplifier thomson
china tv schematic diagram
philips colour television picture tube pin volt
6kw class d circuit diagram schematic
hf tube cascode
tda3562a
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D2290UK
Abstract: sot143 fet
Text: TetraFET D2290UK METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS
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D2290UK
OT143
D2290UK
sot143 fet
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Untitled
Abstract: No abstract text available
Text: TetraFET D2290UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS
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D2290UK
OT143
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D2290UK
Abstract: hf 1W amplifier
Text: TetraFET D2290UK METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS
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D2290UK
OT143
D2290UK
hf 1W amplifier
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D2290UK
Abstract: No abstract text available
Text: TetraFET D2290UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS
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D2290UK
OT143
D2290UK
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Untitled
Abstract: No abstract text available
Text: New Product Announcement! Coaxial Amplifier 50Ω ZX60-100VH+ Medium High Power The Big Deal 0.3 to 100 MHz Click here for data sheet • Miniature Shielded Rugged Case • Wide frequency range • Excellent Gain Flatness ZX60-100VH+ Price: $229.95 QTY 1-4
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ZX60-100VH+
ZX60-100VHX+
3-100MHz
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Untitled
Abstract: No abstract text available
Text: Coaxial Amplifier 50Ω ZX60-100VH+ Medium High Power 0.3 to 100 MHz The Big Deal • Miniature Shielded Rugged Case • Wide frequency range • Excellent Gain Flatness Product Overview This product could be used as a driver amplifier with 1W typical output power. The gain of this amplifier has an excellent
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ZX60-100VH+
3-100MHz
110MHz.
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hf 1W amplifier
Abstract: ZX60-100VH 100-VH
Text: Coaxial Amplifier 50Ω ZX60-100VH+ Medium High Power 0.3 to 100 MHz The Big Deal • Miniature Shielded Rugged Case • Wide frequency range • Excellent Gain Flatness Product Overview This product could be used as a driver amplifier with 1W typical output power. The gain of this amplifier has an excellent
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ZX60-100VH+
3-100MHz
110MHz.
hf 1W amplifier
ZX60-100VH
100-VH
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2SC1969
Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.
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2SC1969
Gpe12dB
27MHz,
27MHz
2SC1969
2sc1969 transistor
transistor 2sC1969
HF power amplifier
f-27MHz
27mhz transistor
2sc196
12v power amplifiers
27mhz
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dmos rf fet 4w 28v
Abstract: D2089 D2089UK
Text: TetraFET D2089UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED H 4 B 3 1 G 2 pls D 2 FEATURES F C (2 p ls) • SIMPLIFIED AMPLIFIER DESIGN E A PIN 1 SOURCE PIN 2
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D2089UK
30MHz
dmos rf fet 4w 28v
D2089
D2089UK
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MPS6514
Abstract: MPS6512 MPS 6512 WBSF
Text: ? :V ^ J ¥à •4 •> -' ■- <¿ MPS 6512 thru’ MPS 6515 âsi;ÿ NPN SILICON PLANAR EPITAXIAL TRANSISTORS là ' ' n i - CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com
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MPS65I2
MPS65I5
T0-92A
MPS6512/3
MPS6514/5
100mA
350mW
MPS6514
MPS6512
MPS 6512
WBSF
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27mhz rf ic
Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,
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2SC1944
2SC1944
27MHz,
T0-220
27MHz
27mhz rf ic
T30 transistor
27mhz transistor
27mhz rf amplifier
T-30
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7
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DG17S24
2SC1944
2SC1944
27MHz,
27MHz
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MB3730
Abstract: MB3730A transformer m01 353
Text: 14 W BTL AUDIO POWER AMPLIFIER MB3730A September 1988 Edition 1.0 14 W BTL AUDIO POWER AMPLIFIER The Fujitsu MB3730A Is designed fo r a low -frequency hlgh-power amplifier with Internal BTL Balanced Transform er Less circuitry. The MB3730A is packed In 7 pin single In line plastic package and requires a few external
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MB3730A
MB3730A
SIP-07P-M01)
MB3730
transformer m01 353
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MPS6516
Abstract: MPS6519 MPS6517 MPS6518 E3060
Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS
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MPS6516
MPS6519
T0-92A
MPS6516/7/8
100mA
350mW
MPS6517
MPS6518
E3060
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Untitled
Abstract: No abstract text available
Text: TetraFET III i t t i II D2089U K SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W -28V-2G H Z SINGLE ENDED G 2 pis FEATURES • SIMPLIFIED AMPLIFIER DESIGN A PIN 1 SOURCE PIN 2 GATE PIN 3 SOURCE PIN 4
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D2089U
-28V-2G
30MHz
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2sc1969
Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm
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2SC1969
2SC1969
27MHz
O-220
27MHz.
2sc1969 transistor
transistor 2sC1969
mitsubishi 2sc1969
2sc1969 capacitance
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BFM23
Abstract: No abstract text available
Text: mi TetraFET ÌFf= mi BFM23 SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W -28V-2G HZ SINGLE ENDED [ ! G D 2 pis FEATURES • SIMPLIFIED AMPLIFIER DESIGN PIN 1 SOURCE PIN 2 GATE • SUITABLE FOR BROAD BAND APPLICATIONS
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BFM23
W-28V-2GHZ
30MHz
Q0Q147L.
BFM23
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Untitled
Abstract: No abstract text available
Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS
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T0-92A
MPS6516
MPS6519
MPS6519
MPS6516/7/8
MPS6516/7/8
100mA
Boxfe477,
100kHz
10kHz
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MB3730
Abstract: MB3730A mylar capacitor 100HZ 10KHZ 200HF
Text: o f - p i FUJITSU MIC ROE LE CT RON IC S 31E D 37H=i7bS GG1S77S 7 « F M I 910253000101010101010202020202010202 F U J IT S U MB3730A September 1988 Edition 1.0 14 W BTL AUDIO POWER AMPLIFIER The Fujitsu MB3730A Is designed fo r a low -frequency hlgh-power amplifier
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GG1S77S
MB3730A
MB3730A
374T7fciS
T-74-05-01
SIP-07P-M01)
80JMAX-
MB3730
mylar capacitor
100HZ
10KHZ
200HF
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