IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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irf1010e equivalent
Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N
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O-220AB
O-220
IRFZ24N*
IRFIZ24N
IRFD024
IRF1010E*
IRFI1310N
IRFD014
IRFZ44E*
IRFI540N
irf1010e equivalent
irfp250n equivalent
IRF744 equivalent
IRFP260n equivalent
IRF9540N equivalent
IRF730A equivalent
IRFBE30 equivalent
irfp260n
IRF4905 equivalent
IRFU9120 equivalent
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irf7309
Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S
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OT-223
IRF3710S
IRF7324
IRF1310NS
IRF731450
1N4049
300U80A
150L10A
DO-30
irf7309
IRF7507TR
IRF7342
IRF7210
IRLML2803TR
IRF964
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AN-994
Abstract: IRF640NL IRL3103L
Text: PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l HEXFET Power MOSFET
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IRF640NPbF
IRF640NSPbF
IRF640NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF640NL
IRL3103L
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AN-994
Abstract: IRF640NL IRL3103L
Text: PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l HEXFET Power MOSFET
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IRF640NPbF
IRF640NSPbF
IRF640NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF640NL
IRL3103L
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power MOSFET IRF640
Abstract: "thermal via" PCB D2PAK hexfet irf640 linear applications of power MOSFET IRF640 marking F53 IRF640S AN-994 IRF640 IRF640L
Text: PD - 9.902A IRF640S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V
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IRF640S/L
IRF640S)
IRF640L)
power MOSFET IRF640
"thermal via" PCB D2PAK
hexfet irf640
linear applications of power MOSFET IRF640
marking F53
IRF640S
AN-994
IRF640
IRF640L
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IRF640N
Abstract: IRF640NL IRF640NS IRL3103L irf640n d2pak
Text: PD - 94006A Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF640N IRF640NS IRF640NL l HEXFET Power MOSFET D RDS on = 0.15Ω
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4006A
IRF640N
IRF640NS
IRF640NL
O-220
AN-994.
O-220AB
IRF640N)
IRF640NS/L)
IRF640N
IRF640NL
IRF640NS
IRL3103L
irf640n d2pak
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Untitled
Abstract: No abstract text available
Text: PD - 94006A Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF640N IRF640NS IRF640NL l HEXFET Power MOSFET D RDS on = 0.15Ω
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4006A
IRF640N
IRF640NS
IRF640NL
O-220
AN-994.
O-220AB
IRF640N)
IRF640NS/L)
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IRF640N
Abstract: AN-994 IRF640NL IRF640NS International Rectifier irf640n
Text: PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description HEXFET Power MOSFET l D RDS on = 0.15Ω
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IRF640N
IRF640NS
IRF640NL
O-220
IRF640N
AN-994
IRF640NL
IRF640NS
International Rectifier irf640n
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IRF640N
Abstract: International Rectifier irf640n AN-994 IRF1010 IRF530S IRF640NL IRL3103L TO-220aB 11A IRF640n applications note 4.5V TO 100V INPUT REGULATOR
Text: PD - 95046A Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l Fifth Generation HEXFET Power MOSFETs from
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5046A
IRF640NPbF
IRF640NSPbF
IRF640NLPbF
O-220
O-220AB
AN-994.
IRF640N
International Rectifier irf640n
AN-994
IRF1010
IRF530S
IRF640NL
IRL3103L
TO-220aB 11A
IRF640n applications note
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD - 95046A Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l Fifth Generation HEXFET Power MOSFETs from
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5046A
IRF640NPbF
IRF640NSPbF
IRF640NLPbF
O-220
O-220AB
AN-994.
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IRF640N
Abstract: IRF640NL IRF640NS IRL3103L
Text: PD - 94006A Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF640N IRF640NS IRF640NL l HEXFET Power MOSFET D RDS on = 0.15Ω
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4006A
IRF640N
IRF640NS
IRF640NL
O-220
AN-994.
O-220AB
IRF640N)
IRF640NS/L)
IRF640N
IRF640NL
IRF640NS
IRL3103L
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International Rectifier irf640n
Abstract: irf640n N-Channel MOSFET 200v
Text: PD - 94007 IRF640N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.15Ω G ID = 18A
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IRF640N
O-220
International Rectifier irf640n
irf640n
N-Channel MOSFET 200v
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Untitled
Abstract: No abstract text available
Text: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω
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-90902B
IRF640S/L
IRF640S)
IRF640L)
08-Mar-07
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AN-994
Abstract: IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
Text: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω
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-90902B
IRF640S/L
IRF640S)
IRF640L)
12-Mar-07
AN-994
IRF640
IRF640L
IRF640S
linear applications of power MOSFET IRF640
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AN-994
Abstract: IRF640 IRF640L IRF640S sec irf640
Text: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω
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-90902B
IRF640S/L
IRF640S)
IRF640L)
AN-994
IRF640
IRF640L
IRF640S
sec irf640
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IRFZ44G
Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics
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IRFIZ34N
IRFIZ44N
IRFIZ48N
IRFI1010N
IRFI520N
IRFI530N
IRFI1310N
IRLI3705N
IRLIZ24N
IRLIZ44N
IRFZ44G
IRF840G
IRFZ34G
IRFBC30G
IRF9540G
IRF640G
IRFBC40G
IRFP140 equivalent
transistor 9721
transistor IRFP140N
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irf510 switch
Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.
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O-262
O-220
IRL3302
IRL3202
IRL3102
IRL3402
IRL3502
Super220TM
O-247
irf510 switch
IRFBA40N60C
800v irf
IRL2505
IRF634L
IRF540NL
IRF520N
IRFU9024N
IRFU3910
IRL3215
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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OCR Scan
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QD102t
IRF540 n-channel MOSFET
GES 9515
irf740,irf840
IRC540 equivalent
RTV3140
IRF540 mosfet with maximum VDS 30 V
IRF540 p-channel MOSFET
IRLC120
AN964
IRFC9140R
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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IRFG43
Abstract: motor driver IRF640
Text: HE 0 I 4055455 0000504 1 | Data Sheet No. PD-9.374F ST- A T INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFS40 IRFG41 IRF642 IRFG43 N-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-220AB Plastic Package
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IRFS40
IRFG41
IRF642
IRFG43
T0-220AB
IRF640
IRF641
IRF643
C-259
IRFG43
motor driver IRF640
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
Text: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214
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IRFC014
IRFC110
IRFC210
IRFC214
IRFC310
IRFC024
IRFC120
IRFC220
IRFC224
IRFC320
IRFZ44 equivalent
IRFBE30 equivalent
IRFBg30 equivalent
IRFPE40 equivalent
IRFP150 equivalent
IRFZ14 equivalent
irfp450 equivalent
Irfp250 irfp460
IRFCE30
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Untitled
Abstract: No abstract text available
Text: International 4Ö55M5E 0D1474Q bflT • INR »¡»Rectifier HEXFET Power MOSFET • • • • • • • PD-9.902 IRF640S INTERNATIONAL RECTIFIER bSE » Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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55M5E
0D1474Q
IRF640S
SMD-220
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1RF640
Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
Text: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA
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IRF640
T0-220
O-220
1RF640
1RF640S
3V IC LINEAR SMD
irf640a
RD540
ov5s
1D11A
IRF640 smd
IRF640 applications note
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