Untitled
Abstract: No abstract text available
Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as
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SXB-2089Z
2500MHz
2500MHz
OT-89
SXB-2089Z
PSF-S01-1mm
EEF-101407
ECB-102925-B
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Untitled
Abstract: No abstract text available
Text: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor
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SZA-3044
EDS-103989
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Untitled
Abstract: No abstract text available
Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5089
OT-89
areA-5089
SBA5089â
SBA5089Zâ
SBA-5089Z
SBA-5089
EDS-102743
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Untitled
Abstract: No abstract text available
Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
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SZM-2066Z
SZM-2066Z
11b/g
a336-678-5570
EDS-104641
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dk39
Abstract: circuit amplifier wireless 2.4ghz 802.11g
Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier
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SZM-2166Z
SZM-2166Z
SZM-2166Z-EVB1
SZM-2166Z-EVB2
SZM-2166Z-EVB3
EDS-105840
dk39
circuit amplifier wireless 2.4ghz 802.11g
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Untitled
Abstract: No abstract text available
Text: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier
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SZM-3166Z
SZM-3166Z
SZM-3166Zâ
SZM-3166Z-EVB1
EDS-105462
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EPA240D
Abstract: No abstract text available
Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA240D
33dBm
EPA240D
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EPA025A-70
Abstract: 0466 1.5 micron
Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz
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EPA025A-70
70mil
18GHz
12GHz
Rn/50
EPA025A-70
0466 1.5 micron
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Xa2 TRANSISTOR
Abstract: SXH-189 AN023
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
EDS-101247
Xa2 TRANSISTOR
AN023
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EPA240D-SOT89
Abstract: EPA240D EPA240
Text: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features '5$,1 6285& (Top View All Dimensions In Mils Applications • • • $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE
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EPA240D-SOT89
33dBm
40dBm
EPA240D-SOT89
EPA240D
EPA240
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513 s12 datasheet
Abstract: EPA060BV EPA060B
Text: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
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EPA060B/EPA060BV
EPA060B
EPA060BV
18GHz
EPA060B
MA162
Rn/50
513 s12 datasheet
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EPA040A
Abstract: No abstract text available
Text: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA040A
18GHz
12GHz
EPA040A
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AN-075
Abstract: A64 marking amplifier MMIC A64 marking SGA-6486z SGA-6486 marking 64z MMIC "A64" marking
Text: SGA-6486 Product Description The SGA-6486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes
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SGA-6486
SGA-6486
AN-075
SGA-6486Z
EDS-100615
AN-075
A64 marking amplifier
MMIC A64 marking
SGA-6486z
marking 64z
MMIC "A64" marking
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 4, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad
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MMG3013NT1
MMG3013NT1
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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SGA-3286
Abstract: SGA-3286Z EDS-100631 Cascadable SiGe HBT MMIC Amplifier
Text: SGA-3286 Z SGA-3286(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part number) Package: SOT-86 Product Description Features The SGA-3286 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA-3286
5000MHz,
OT-86
850MHz
SGA3286
SGA-3286Z
SGA-3286Z
EDS-100631
Cascadable SiGe HBT MMIC Amplifier
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SOF-26
Abstract: SZP-3026Z
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
SOF-26
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BF5Z
Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089"
SBF5089Z"
BF5Z
hemt Ee
marking ee hemt
SBF 5089
SBF5089
SBF-5089Z
SBF50
sbf5089z
marking code 827 sot89
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a35z
Abstract: SGA-3563 SGA-3563Z sga 3563 SGA-3563 Z SiGe HBT GAIN BLOCK MMIC AMPLIFIER SGA3563Z sga3563
Text: SGA-3563 Z SGA-3563(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-3563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA-3563
5000MHz,
OT-363
V78-5570
EDS-101496
SGA-3563
a35z
SGA-3563Z
sga 3563
SGA-3563 Z
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
SGA3563Z
sga3563
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toko 5c
Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
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SPA-2318
1700MHz
2200MHz
1960MHz
2140MHz
diPA-2318
SPA-2318
SPA-2318Z
toko 5c
MCH18
MCR03
TAJB106K020R
SPA-2318Z
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SBA-5086
Abstract: BA5 Amplifier sba-5086z sba5086z
Text: SBA-5086 Z SBA-5086(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-86 Product Description Features RFMD’s SBA-5086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5086
OT-86
SBA-5086
SBA-5086Z
EDS-102742
BA5 Amplifier
sba-5086z
sba5086z
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transistor 65 C 3549
Abstract: linear amplifier P1dB 36dBm
Text: Stanford Microdevices Product Description SNA-676 Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6,5
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SNA-676
18dBm
SNA-600)
-676-TR1
-676-TR2
SNA-676-TR3
transistor 65 C 3549
linear amplifier P1dB 36dBm
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