ATF501P8
Abstract: ATF-501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229
Text: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package
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ATF-501P8
5988-9767EN
ATF501P8
ATF-501P8-BLK
ATF-501P8-TR1
ATF-501P8-TR2
MO229
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PDF
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ATF-501P8
Abstract: 4570 8-pin RF 902-145 A004R ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 4558 schematic diagram
Text: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package
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Original
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ATF-501P8
5988-9767EN
4570 8-pin RF
902-145
A004R
ATF501P8
ATF-501P8-BLK
ATF-501P8-TR1
ATF-501P8-TR2
MO229
4558 schematic diagram
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PDF
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CFY75
Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-F1368
Q62702-F1369
235b05
DDL75MG
CFY75
EHT08184
fl235b05
0QL7S41
CFY75
cfy 75
cfy 14 siemens
HEMT marking P
FMI 591
cfy siemens
CFY 19
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PDF
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GSO05553
Abstract: Q62702-G117 CFH77 HEMT marking P
Text: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code
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Q62702-G117
GSO05553
GSO05553
Q62702-G117
CFH77
HEMT marking P
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PDF
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Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
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MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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PDF
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4953A
MGF4953A
12GHz
000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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MGF4953B
MGF4953B
20GHz
000pcs/reel
MGF4953B-01)
MGF4953B-70al
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PDF
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MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
HEMT marking K
GD-32
low noise Micro-X marking "K"
MGF4963B
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PDF
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MGF4964
Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
MGF4964
Micro-X marking "K"
transistor "micro-x" "marking" 3
low noise Micro-X marking "K"
HEMT marking K
Low Noise Gaas
GD-32
MGF4964B
MGF496
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PDF
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MGF4931AM
Abstract: MGF4931 77153
Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4931AM
MGF4931AM
12GHz
15000pcs/reel
MGF4931
77153
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PDF
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HEMT marking K
Abstract: MGF4953A
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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Original
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MGF4953A
MGF4953A
12GHz
000pcs/reel
HEMT marking K
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
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PDF
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MGF4851
Abstract: transistor 305
Text: < Power GaAs HEMT > MGF4851A Leadless ceramic package DESCRIPTION The MGF4851A power InGaAs HEMT High Electron Mobility Transistor is designed for use in S to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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MGF4851A
MGF4851A
12GHz
000pcs/reel
MGF4851
transistor 305
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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Original
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MGF4931AM
MGF4931AM
12GHz
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4936AM
MGF4936AM
12GHz
MGF4936AM-75
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4936AM
MGF4936AM
12GHz
MGF4936AM-75
15000pcs/reel
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PDF
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MGF4934
Abstract: mgf4934cm MGF4934CM-75 130/KU 601
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
MGF4934
130/KU 601
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PDF
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MGF4953B
Abstract: MGF4953B-70
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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Original
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MGF4953B
MGF4953B
20GHz
000pcs/reel
000pcs/reel
MGF4953B-01)
MGF4953B-70)
MGF4953B-70
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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Original
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MGF4965BM
MGF4965BM
20GHz
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4965BM
MGF4965BM
20GHz
15000pcs/reel
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PDF
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1 928 405 766
Abstract: GD-32 rogers 4403
Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)
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MGF4941AL
MGF4941AL
12GHz
4000pcs
1 928 405 766
GD-32
rogers 4403
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PDF
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