AMPLIFIER 5W
Abstract: NTE1116
Text: NTE1116 Integrated Circuit Audio Power Amplifier, 5W Description: The NTE1116 is a monolithic integrated circuit designed for use as a low frequency class B amplifier. The external cooling tabs enable 2.5 watts of output power to be achieved without the use of an external heat sink and 5 watts of output power using a small area of the P.C. board copper as a heat sink.
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NTE1116
NTE1116
100Hz,
22kHz
AMPLIFIER 5W
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Thermal Management
Abstract: Heatsinks for 14 pin dip 16 pin dip with heat sink njm3717 NJM3771 NJM3772 NJM3774 NJM3770A NJM3777
Text: Thermal Management New JRC’s stepper motor ICs are power Ics encapsulated in Dual in Line DIP , EMP and PLCC (Plastic Leaded Chip Carrier) packages. The silicon die is directly bonded to a heat-spreading lead-frame for efficient heat-transfer to an external heat sink, or to a copper ground plane on the printed circuit board.
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ebonol
Abstract: 217-36CT6 218-40CT3 218-40CT5 MO-169 204sb
Text: Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS 217 SERIES Surface Mount Heat Sinks D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area,
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O-220,
OT-223,
SOL-20
ebonol
217-36CT6
218-40CT3
218-40CT5
MO-169
204sb
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ebonol
Abstract: abe sot-223 217-36CTRE6 217-36CT6 MO-169
Text: Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS Surface Mount Heat Sinks 217 SERIES D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area, increasing the power dissipation of surface mount devices (SMDs) while maintaining and improving manufacturers'
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O-220,
OT-223,
SOL-20
ebonol
abe sot-223
217-36CTRE6
217-36CT6
MO-169
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mosfet SOA testing
Abstract: AN9409 RFP70N06 RFD3055 mosfet transistor checking and testing 407 transistor
Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated junction temperature. The circuits to maintain a fixed current
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ebonol
Abstract: 260-4TH5B ebonol c black 205cb AB-275 204-CB TUBE 1625 5 lead dd pak weight 260-6SH5B 205-CB
Text: Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS 217 SERIES Surface Mount Heat Sinks D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area,
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O-220,
OT-223,
SOL-20
ebonol
260-4TH5B
ebonol c black
205cb
AB-275
204-CB
TUBE 1625
5 lead dd pak weight
260-6SH5B
205-CB
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AN9409
Abstract: transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409
Text: Harris Semiconductor No. AN9409 Harris Power MOSFETs August 1994 SAFE OPERATING AREA TESTING WITHOUT A HEAT SINK Authors: Wally Williams and Stan Benczkowski Introduction package at a very predictable rate since constant power circuits are usually used in SOA testing. There is also heat flow
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AN9409
1-800-4-HARRIS
AN9409
transistors 9409
477J
mosfet SOA testing
Harris Semiconductor to220 power transistor
RFD3055
RFP70N06
DB233
transistors+9409
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mosfet SOA testing
Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N94 bt AFE ERING REA STG THUT AT NK utho eyrds er ) OCI O frk geode setes OCEW frk Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated
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ebonol
Abstract: 637-10ABEP WTS001 MO-169 217-36CT6 634-20ABEP 637-15ABEP 236-150ABE-01 abe sot-223 sot-223 package dimensions
Text: WTS001_p1-25 6/14/07 10:54 AM Page 22 Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS Surface Mount Heat Sinks 217 SERIES D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area, increasing the power dissipation of surface mount devices (SMDs) while maintaining and improving manufacturers'
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WTS001
p1-25
O-220,
OT-223,
SOL-20
ebonol
637-10ABEP
MO-169
217-36CT6
634-20ABEP
637-15ABEP
236-150ABE-01
abe sot-223
sot-223 package dimensions
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Untitled
Abstract: No abstract text available
Text: WTS001_p1-25 6/14/07 10:54 AM Page 22 Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS Surface Mount Heat Sinks 217 SERIES D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area, increasing the power dissipation of surface mount devices (SMDs) while maintaining and improving manufacturers'
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WTS001
p1-25
O-220,
OT-223,
SOL-20
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mosfet SOA testing
Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N75 ubct AFE PERTING REA ESTG ITHUT EAT NK) utho ) eyords reor ) OC FO fark ageode seute OCEW fark Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated
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Untitled
Abstract: No abstract text available
Text: BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS Surface Mount Heat Sinks 217 SERIES D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area, increasing the power dissipation of surface mount devices (SMDs) while maintaining and improving manufacturers'
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O-220,
OT-223,
SOL-20
217-36CTR6
1-866-9-OHMITE
217-36CTT6
O-263
MO-169
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SIL-PAD density
Abstract: ASTM-A228 A228
Text: Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest surface area and smallest footprint. It is the ideal type
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O-247
O-264
6063T5
MV-102-55E
MA-102-55E
1-866-9-OHMITE
SIL-PAD density
ASTM-A228
A228
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TO-268
Abstract: No abstract text available
Text: • Increased thermal performance up to 30% over bright copper heat sinks from improved radiation of the black finish • Increased surface areas by 3 times therefore thermal performance up to 300% over the aluminum stamped heat sinks on markets • Unique aluminum extrusion
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O-263)
O-268)
O-263
O-268
1-866-9-OHMITE
TO-268
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to-268
Abstract: No abstract text available
Text: HEATSINK D Series THERMAL MANAGEMENT Heatsink For SMT devices F e at u r e s • Increased thermal performance up to 30% over bright copper heat sinks from improved radiation of the black finish • Increased surface areas by 3 times therefore thermal performance up to 300% over the aluminum
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O-263)
DV-T263-101E
DA-T263-101E
DV-T263-101E-TR
DA-T263-101E-TR
DV-T268-101E
DA-T268-101E
DV-T268-101E-TR
DA-T268-101E-TR
1-866-9-OHMITE
to-268
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Untitled
Abstract: No abstract text available
Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap
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MBR150,
MBR160
MBR160
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Untitled
Abstract: No abstract text available
Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,
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MBR1100
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marking B1100
Abstract: No abstract text available
Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,
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MBR1100
marking B1100
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D3PAK
Abstract: tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249
Text: APPLICATION NOTE APT9503 By Kenneth W. Dierberger and Denis R. Grafham INNOVATIVE MOUNTING TECHNIQUES ENHANCE THERMAL PERFORMANCE OF THE SURFACE-MOUNT D3 PAK PACKAGE PRESENTED AT POWERSYSTEMS WORLD INTERNATIONAL CONFERENCE & EXHIBIT SEPTEMBER 12, 1995 Page 1
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APT9503
B-1330
O-247,
D3PAK
tunnel diode application
to247 pcb footprint
FR4 substrate height and thickness
APT9503
APT4016SN
"tunnel diode" chip assembly
Thermalcote THE 249
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AMPLIFIER 5W TBA800
Abstract: TBA800 TBA-800 tba 396
Text: L I NEAR I N T E G R A T E D C I R C U I T TBA 800 AUDIO POWER AMPLIFIER The TBA 800 is an m on olith ic integrated pow er am p lifie r in a 12-lead quad in -lin e plastic package. The external coo lin g tabs enable 2.5 W ou tput pow er to be achieved w ith out external he a t-sin k and 5 W ou tput pow er using a sm all area of the P.C.
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12-lead
AMPLIFIER 5W TBA800
TBA800
TBA-800
tba 396
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Untitled
Abstract: No abstract text available
Text: Application Hint 17 Calculating P.C. Board Heat Sink Area For Surface Mount Packages By Bob Wolbert General Description System designers increasingly face the restriction of using all surface-m ounted com ponents in their new designs; even including the power components. Through-hole com ponents
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IC5201-5
OT-223
T-223
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Untitled
Abstract: No abstract text available
Text: M OTOROLA Order this document by MBRP20060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRP20060CT SW ITCH MODE™ Schottky Power R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m e tal-to-silicon
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MBRP20060CT/D
MBRP20060CT
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B8035
Abstract: mbr8035
Text: MBR8035 MBR8045 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBRB045 is a Motorola Preferred Device Sw itch m o d e Pow er R ectifiers . . . using a platinum barrier metal in a large area metai-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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MBR8035
MBR8045
MBRB045
B8035
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M B RP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M BRP20030CTL SWITCHMODE™ S chottky Pow er R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m etal-to-silicon
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RP20030CTL/D
BRP20030CTL
357C-03
MBRP20030CTL/D
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