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    HE8402F

    Abstract: No abstract text available
    Text: HI TA CH I/ OPTO ELE CTRONICS IflE D • 441b20S OOIOIOD T ■ HE8402F _ GaAIAs I RED Description H E 8402F is a 0.8 fim GaAIAs infrared emitting diode with double heterojunction structure, which provides high speed response. The package can be easily connected to optical


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    PDF 441b20S HE8402F 8402F HE8402F

    HA 12058

    Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
    Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION


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    PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P