Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8S42*
15054AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0258AA
SM3S42*
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM6F151*
SM6F251*
SM6F351*
SM6F451*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8U22*
SM8U42*
SM8U52*
SM8U62*
T0258AA
FT0258AA
HDS100
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T0254AA
Abstract: T0257AA
Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,
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000301S
T0257AA
SM1S41
SM1S01
T0258AA
FT0258AA
HDS100
T0254AA
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SCR 214
Abstract: HS44S HS14S HS24S HS64S HS34S HS04S scr 6 Ampere HS034 HS034S
Text: HUTSON INDUSTRIES bi PE] DDDOBII & HUTSON INDUSTRIES • ?J y ;'v. 4 AMPERE SENSITIVE GATE SC R ’s -Al 200uA P C Gate'-f rigger Current 1mA DC Gate-Trigger Current l '. ' a p"'The Hutson line of sensitive gate SCR’s is designed to be driven directly with 1C «nd
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200/jA
SCR 214
HS44S
HS14S
HS24S
HS64S
HS34S
HS04S
scr 6 Ampere
HS034
HS034S
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1061S
Abstract: L905
Text: SEMTECH C0RP 5fiE D • fllBTlBT ODDBT?! Eb2 ■ SET ADJUSTABLE POSITIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE SM1R41 A* This device is a three terminal adjustable positive voltage re g u la to r, requiring only two external resistors to set up the output voltage. Inherent in this device are all of the
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T0257AA
SM1R41
T0254AA
T0258AA
FT0258AA
HDS100
1061S
L905
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM4F151S*
SM4F351S*
SM4F251S*
SM4F451S*
T0254AA
T0258AA
FT0258AA
HDS100
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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Untitled
Abstract: No abstract text available
Text: SÔE D SEMTECH CORP H ûlB'îig'i O O D E T ? 1! 553 • SET LOW DROPUT ADJUSTABLE POSITIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE SM1R41L* This device is a three terminal adjustable positive voltage regulator, designed to provide 1.5A with higher efficiency than standard adjustable regulators. The internal circuitry is
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T0257AA
SM1R41L*
T0254AA
T0258AA
FT0258AA
HDS100
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Adjustable negative Voltage Regulator
Abstract: No abstract text available
Text: SEHTECH Sf iE CORP D • 613^13^ O OO BT T S ADJUSTABLE NEGATIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE TOfl «S E T SM1R81 A* This device is a three terminal adjustable negative voltage regulator, requiring only two external resistors to set up the output voltage. Inherent in this device are all of the
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T0257AA
SM1R81
T0254AA
T0258AA
FT0258AA
HDS100
Adjustable negative Voltage Regulator
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Untitled
Abstract: No abstract text available
Text: SEHTECH CORP SflE D m FIXED OUTPUT NEGATIVE VOLTAGE REGULATORS IN HERMETIC ISOLATED T0257AA PACKAGE □ □ □ 2 T 67 b2 T SM1R51B* SM1R61B* SM1R71B* These devices incorporate monolithic integrated circuits configured as fixed output voltage regulators. Inherent in this device are all the safety features required for a voltage regulator,
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T0257AA
SM1R51B*
SM1R61B*
SM1R71B*
T0258AA
HDS100
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T0257AA
Abstract: No abstract text available
Text: SEMTECH CORP SflE D • fl 1 3 T 1 3 ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE DD03007 Olb SM1U21* SM1U41* SM1U51* SM1U61* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AA
DD03007
SM1U21*
SM1U41*
SM1U51*
SM1U61*
T0258AA
FT0258AA
HDS100
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