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    HALBLEITER TRANSISTORS 1975 Search Results

    HALBLEITER TRANSISTORS 1975 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HALBLEITER TRANSISTORS 1975 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Denso L 918

    Abstract: Denso L 918 8 grundig sc 303 ECI T DAX kostal DER-256 EUPEC T 558 F GPS chip herr der ringe SCHNEIDER PLC
    Text: Bericht über die Geschäftsentwicklung bis März 2000. Umschlag 11.07.2000 18:11 Uhr Seite U1 INFINEON TECHNOLOGIES AG Postfach 80 09 49 81609 München Kontakt für Anleger und Analysten Abteilung Investor Relations Telefon 0 89 - 23 42 66 55 Telefax 0 89 - 2 34 71 84 84


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    B191-H7561 0398-00-JWT Denso L 918 Denso L 918 8 grundig sc 303 ECI T DAX kostal DER-256 EUPEC T 558 F GPS chip herr der ringe SCHNEIDER PLC PDF

    GSC351-HYB1900

    Abstract: J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin MD7IC2050GNR1
    Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage


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    MD7IC2050N MD7IC2050N MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 GSC351-HYB1900 J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin PDF

    GRM31CR61H225KA88L

    Abstract: j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1 A114
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage


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    MD7IC2050N MD7IC2050N MD7IC205ubsidiaries, MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 GRM31CR61H225KA88L j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050NBR1 A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage


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    MD7IC2050N MD7IC2050N MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 PDF

    ATC600S10

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


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    MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10 PDF

    ATC600S2R7BT250XT

    Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


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    MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT PDF

    CW12010T0050GBK

    Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


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    MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


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    MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 PDF

    *J532

    Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


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    MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529 PDF

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


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    MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 PDF

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


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    MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT PDF

    TE 2395 motorola

    Abstract: rz2 d12 334 te 2395 MC33991DW te 2395 MC33991 390422 4184-60 ST11 Step motor driver ATE8
    Text: Freescale Semiconductor Technical Data Document Number: MC33991 Rev. 2.0, 11/2006 Gauge Driver Integrated Circuit 33991 This 33991 is a single packaged, Serial Peripheral Interface SPI controlled, dual stepper motor gauge driver Integrated Circuit (IC).


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    MC33991 TE 2395 motorola rz2 d12 334 te 2395 MC33991DW te 2395 MC33991 390422 4184-60 ST11 Step motor driver ATE8 PDF

    rz2 d12

    Abstract: counter 74492 -20/ITT rz2 d12
    Text: Freescale Semiconductor Technical Data Document Number: MC33991 Rev. 2.0, 11/2006 Gauge Driver Integrated Circuit 33991 This 33991 is a single packaged, Serial Peripheral Interface SPI controlled, dual stepper motor gauge driver Integrated Circuit (IC).


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    MC33991 rz2 d12 counter 74492 -20/ITT rz2 d12 PDF

    56f8000 peripheral reference manual

    Abstract: freescale 56f8 peripheral manual MC56F8000RM 56800E 56F8000 56F801X DSP56800E inverter 6kw 56F80 a6pe
    Text: 56F801X Peripheral Reference Manual 56F8000 16-bit Digital Signal Controllers DSC 12 13 14 15 16 MC56F8000RM Rev. 5 08/2007 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary to have all three documents. They are: DSP56800E Reference Manual, 56F801X Peripheral User


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    56F801X 56F8000 16-bit MC56F8000RM DSP56800E 56F801X 56800E 56f8000 peripheral reference manual freescale 56f8 peripheral manual MC56F8000RM 56F8000 inverter 6kw 56F80 a6pe PDF

    K 3531

    Abstract: freescale superflash
    Text: 56F8300 Peripheral User Manual Also Supports 56F8100 Device Family 56F8300 16-bit Hybrid Controllers 12 13 14 15 16 MC56F8300UM Rev. 9 01/2007 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary


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    56F8300 56F8100 56F8300 16-bit MC56F8300UM DSP56800E MC56F8300 MC56F8300UM/D K 3531 freescale superflash PDF

    Bosch hfm

    Abstract: 7815 voltage regulator 56800E 56F8100 56F8300 DSP56800E MC56F8300 MC56F8300UM DIN 1707 pwm automotive MOTOR CONTROL
    Text: 56F8300 Peripheral User Manual Also Supports 56F8100 Device Family 56F8300 16-bit Hybrid Controllers 12 13 14 15 16 MC56F8300UM Rev. 6 11/2004 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary


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    56F8300 56F8100 16-bit MC56F8300UM DSP56800E MC56F8300 MC56F8300UM/D 56800E Bosch hfm 7815 voltage regulator 56F8300 MC56F8300UM DIN 1707 pwm automotive MOTOR CONTROL PDF

    Bosch HFM 5

    Abstract: IC transistor linear handbook freescale superflash
    Text: Peripheral User Manual Also Supports 56F8100 Device Family 56F8300 16-bit Hybrid Controllers 12 13 14 15 16 MC56F8300UM Rev. 10 10/2007 freescale.com 17 18 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently


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    MC56F8300UM 56F8300 56F8100 56F8300 16-bit DSP56800E MC56F8300 Bosch HFM 5 IC transistor linear handbook freescale superflash PDF

    TESLA KY 703

    Abstract: TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig
    Text: SERVICE-MITTEILUNGEN V EB IN D U ST R IE V E R T R IE B RU N D FU N K UND FE R N SE H E N r a d i o -television Als Weiterentwicklung des bekannten Rundfunkgerätes SELECT wird aus der Sozia­ listischen Republik Rumä­ nien der Heimempfänger R O Y A L AUSGABE:


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    III/18/379 TESLA KY 703 TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig PDF

    maa 502

    Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
    Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik


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    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    Halbleiterbauelemente DDR

    Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
    Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder


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    halbleiter index transistor

    Abstract: National Semiconductor Linear Data Book
    Text: 3 4 0 0 0 I SO PLAIN! AR C M O S DATA BOOK FAIRCHILD S E M IC O N D U C T O R 464 Ellis Street, Mountain View, California 94042 1975 Sem iconductor C om ponents Group, Fairchild Camera and Instrum ent C orpo ra tio n /4 6 4 Ellis Street, M ountain View , C alifornia 9 4 0 4 2 / 4 1 5 9 6 2 -5 0 1 1 /T W X 9 1 0 -3 7 9 -6 4 3 5


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF