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    HA 1329 IC Search Results

    HA 1329 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    HA 1329 IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1000BASE-BX10-U

    Abstract: EN-60825-2 EIA-JESD22-A114 RIN12OMA
    Text: SFBD-1250A4Q1R Small Form Factor Bi-Directional Transceiver Module for Gigabit Ethernet FEATURES RoHS compliant IEEE802.3ah Gigabit Ethernet compliant SFF package with bi-directional SC receptacle Upstream 1.25Gbps transmitter with 1310nm FP Laser, and downstream 1.25Gbps receiver


    Original     		SFBD-1250A4Q1R IEEE802 25Gbps 1310nm 1490nm 1550nm 1650nm SFBD-1250xxxx 1000BASE-BX10-U 1000BASE-BX10-U EN-60825-2 EIA-JESD22-A114 RIN12OMA PDF

    upc 1270 H

    Abstract: No abstract text available
    Text: SFBD-1250A4Q1R Small Form Factor Bi-Directional Transceiver Module for Gigabit Ethernet FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z SFF package with bi-directional SC receptacle z Upstream 1.25Gbps transmitter with 1310nm FP Laser, and downstream 1.25Gbps receiver


    Original     		SFBD-1250A4Q1R IEEE802 25Gbps 1310nm 1490nm 1550nm 1650nm SFBD-1250xxxx E239394 upc 1270 H PDF

    Untitled

    Abstract: No abstract text available
    Text: OPEP-33-A4Q1SC 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES  RoHS compliant  IEEE802.3ah Gigabit Ethernet compliant  2x5 pin SFF package with SC Receptacle  1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		OPEP-33-A4Q1SC 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm PDF

    Untitled

    Abstract: No abstract text available
    Text: OPEP-33-A4Q3R 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES RoHS compliant IEEE802.3ah Gigabit Ethernet compliant 2x5 pin SFF package with SC pigtail fiber 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		OPEP-33-A4Q3R 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm PDF

    upc 1270 H

    Abstract: EIA-JESD22-A114
    Text: OPEP-33-A4Q1RC 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z 2x5 pin SFF package with SC Receptacle z 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		OPEP-33-A4Q1RC 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm upc 1270 H EIA-JESD22-A114 PDF

    EIA-JESD22-A114

    Abstract: IEC-61754-4 OPEP-33-A4Q3RZ OPEP-33-A4Q3
    Text: OPEP-33-A4Q3RZ 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z 2x5 pin SFF package with SC pigtail fiber z 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		OPEP-33-A4Q3RZ 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm EIA-JESD22-A114 IEC-61754-4 OPEP-33-A4Q3RZ OPEP-33-A4Q3 PDF

    ifr 4200 panel

    Abstract: 1329
    Text: Contents Block Diagram. 1 Pin A ssignm ent. 2 Operating F


    OCR Scan     		S-4543A S-4543A 32x120) 33x120) S-4543A_ ifr 4200 panel 1329 PDF

    ws57c257

    Abstract: ws57c65 WS*57c257
    Text: WAFER SCALE I N T E GR A T I O N 3^E D B T S 3 T b cìa QQOObbT 7 H IlilA F WS57C210M PRELIMINARY WAFERS CALE INTEGRATION, INC. 1 Meg 64K x 16 EPROM MODULE KEY FEATURES • Fast Programming • High-Density 64K x 16 CMOS EPROM Module — • Utilizes Four WS57C256F High-Speed


    OCR Scan     		WS57C210M WS57C256F WS57C65 WS57C257 WS57C210M 576-bit Only3-119 WS57C210M-55R WS57C210M-70R ws57c257 ws57c65 WS*57c257 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T -4 6 -1 3-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


    OCR Scan     		02S7SSÃ Am27C512 512K-btt, D0303Ã AID27C512 T-46-13-29 PDF

    AM27C512

    Abstract: AM27C512-120DC
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T-46-13-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


    OCR Scan     		303bfi T-46-13-29 Am27C512 512K-bit, D0303Ã AIYI27C512 AM27C512-120DC PDF

    Untitled

    Abstract: No abstract text available
    Text: SO LITRO N D E V IC E S INC b lC f~ x ¿ D ñ3bñbOE DDG14CÍ3 1 • ■ o o T C o f " q S C. u ;ift* SOD 1 &<;'(<-r - / / J o \Jc5(2 ü ú t-T V ? 6 ci- / / / J Í t C r / i- 'A ^ !| T Y P E NO . ^ GROUP A • S a d X V o u r V i U t t . S V 3 V o u r V / tj z


    OCR Scan     		DDG14C PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 33E D GSS7SSÖ 0 □ 2 fl fl ü E A m 2 7 C 1 0 0 I AMD4 b Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ EIAJ 32 pin DIP package Pinout Compatible with 28 pin ROM


    OCR Scan     		Am27C100 CDV032 T-46-13-25 Atn27C100 PDF

    ATMEL AT27c512

    Abstract: No abstract text available
    Text: ETE D AT H E L CO R P • 1Q74177 ODGlOGb 4 AT27C512 Features • Low Power CMOS Operation • • • • • • • • • 100 nA max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time-120ns Wide Selection of JEDEC Standard Packages Including OTP


    OCR Scan     		1Q74177 AT27C512 Time-120ns 32-Pad 200mA AT27C512 Military/883C Milltary/883C ATMEL AT27c512 PDF

    ATMEL AT27c512

    Abstract: AT27C512 ATMEL AT27c512 PLCC at27c512-15di AT27C512-15J 27C512 T-25 27C512* PLCC AT27C512-20DM AT27C512-15
    Text: ETE D AT H E L CO R P • 1Q74177 ODGlOGb 4 AT27C512 Features • Low Power CMOS Operation • • • • • • • • • 100 nA max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time-120ns Wide Selection of JEDEC Standard Packages Including OTP


    OCR Scan     		1Q74177 AT27C512 Time-120ns 32-Pad 200mA A0-A15 28DW6 AT27C512-25DI AT27C512-25LI AT27C512-25PI ATMEL AT27c512 ATMEL AT27c512 PLCC at27c512-15di AT27C512-15J 27C512 T-25 27C512* PLCC AT27C512-20DM AT27C512-15 PDF

    AM27C64

    Abstract: DG3032 AM27C64-90DC
    Text: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■


    OCR Scan     		Am27C64 tlme-55 64K-bjt, DG3032b T-46-13-29 DG3032 AM27C64-90DC PDF

    AM27C128

    Abstract: zi11
    Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current


    OCR Scan     		003G327 T-46-13â Am27C128 tlme-55 128K-bit, T-46-13-29 1420-009A zi11 PDF

    LFT 3A

    Abstract: HA 1329 2SD1329
    Text: HITACHI 2SD1329 R SILICON NPN TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AMPLIFIER PO W ER SWITCHING I. Base 2 C ollector (R a n g e 3 E m m er (D im en sio n s in m m ) {JE D E C TO-220AB} • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION


    OCR Scan     		2SD1329 O-220AB} 2SDI329Â LFT 3A HA 1329 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATMEL CORP 43E D m 1D74177 000173=1 7 I ATM AT27HC1024 Features • Very Fast Read Access Time •55ns • Low Power CMOS Operation 8 mA max. Standby 80 mA max. Active at 10 MHz • Wide Selection of JED EC Standard Packages Including OTP 40-Lead 600 mil Cerdlp and OTP Plastic


    OCR Scan     		1D74177 AT27HC1024 40-Lead 44-Pad 200mA 40DW6 Miiitary/883C Military/883C PDF

    AT27HC1024

    Abstract: AT27C1024 AT4014
    Text: ATMEL CORP 43E D m 1D74177 000173=1 7 I ATM AT27HC1024 Features • Very Fast Read Access Time •55ns • Low Power CMOS Operation 8 mA max. Standby 80 mA max. Active at 10 MHz • Wide Selection of JED EC Standard Packages Including OTP 40-Lead 600 mil Cerdlp and OTP Plastic


    OCR Scan     		40-Lead 44-Pad 200mA AT27HC1024 T-46-/3-25 AO-A15 O4-12LM 40DW6 AT27HC1024-12DM/883 AT27HC1024-12KM/883 AT27C1024 AT4014 PDF

    AM270256

    Abstract: AM27C256 AM27C256-55 IN30B4
    Text: ADV MI CRO MEMORY •4ÖE » OSS7SSÔ DÜ3034E ö • AMD4 T—46—73-29 Advanced Micro Devices Am27C256 32,768 x 8-Blt CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tim e-55 ns ■ Low power consum ption: -100 fiA maximum standby current Programming voltage: 12.75 V


    OCR Scan     		Am27C256 tIme-55 128K-bit, D257S2Ã 0D3035b T-46-73-29 8007-009A AM270256 AM27C256-55 IN30B4 PDF

    AT27LV256R

    Abstract: AT27LV256R-30 1N914 AT27C256R
    Text: ATMEL CORP m 43E D 1D7417? 0 0 01 7 2 ^ D SB ATM AT27LV256R T-Y6-/3-2 9 T-H6 -G-25 Features • • • • • • • • • • • W ide P ow er S upply R ange, 3.0 V D C to 5.5 V D C C om patible w ith JE D E C S tandard A T27C 256R Low P ow er 3-V o lt C M O S O peration


    OCR Scan     		1D7417? AT27LV256R AT27C256R 110mW 300ns 28-Lead 32-Pad 200mA Ra27LV256R D00173S AT27LV256R-30 1N914 AT27C256R PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:


    OCR Scan     		Am27C010 28-Pin 32-Pin 0205-009A AITI27C010 PDF

    Untitled

    Abstract: No abstract text available
    Text: HV20220 HV20320 Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options V PP - V NN 28-pin plastic DIP 28-lead plastic chip carrier 48-lead TQFP Die HV20220X 200V HV20220P


    OCR Scan     		HV20220 HV20320 28-pin 28-lead 48-lead HV20220X HV20220P HV20220PJ HV20220FG HV20320PJ PDF

    Am27C4096

    Abstract: AM27C4096-120/BQA
    Text: ADV MICRO MEMORY 4ÖE D 025755Ö Prelim inary 0G3DS30 T «AMD4 T—46—1 3-29 Am27C4096 a Advanced Micro Devices 4 Megabit (262,144 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ± 10% power supply tolerance standard on most speeds 100% Flashrite programmlng


    OCR Scan     		0D3GS30 T-46-13-29 Am27C4096 16-Bit) 40-pin 44-pin DD30S44 T-46-13-29 14971-006b AM27C4096-120/BQA PDF