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    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


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    G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout PDF

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


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    GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC PDF

    AM27C512

    Abstract: AM27C512-120DC
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T-46-13-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


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    303bfi T-46-13-29 Am27C512 512K-bit, D0303Ã AIYI27C512 AM27C512-120DC PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area


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    DS5752Ã 256word 48-bit 48-blt 48-bit 08125-009B Am99ClOA 8125-012A 8125-011A PDF

    AM27C64

    Abstract: DG3032 AM27C64-90DC
    Text: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■


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    Am27C64 tlme-55 64K-bjt, DG3032b T-46-13-29 DG3032 AM27C64-90DC PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T -4 6 -1 3-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


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    02S7SSÃ Am27C512 512K-btt, D0303Ã AID27C512 T-46-13-29 PDF

    D031

    Abstract: am27c64
    Text: ADV MICRO MEMORY bHE » B Ü2S7S2Ö DDBITDT 431 ZJ Advanced Micro Devices Am27C64 64 Kilobit (8,192 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 45 ns ■ High noise immunity


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    Am27C64 28-pin 32-pin 64-Kbit KS000010 11419c-9 D031 PDF