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    H7N1005LS Search Results

    H7N1005LS Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    H7N1005LSTR-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 15A 110Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    H7N1005LS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    H7N1005LS Renesas Technology MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff ( us) typ: 0.042; Package: LDPAK (S)- (1) Original PDF

    H7N1005LS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0100 Rev.1.00 Apr 07, 2006 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H7N1005LD, H7N1005LS, H7N1005LM REJ03G0391-0100 PRSS0004AE-A PRSS0004AE-B H7N1005LD H7N1005LS PRSS0004AE-C

    H7N1005LMTL-E

    Abstract: H7N1005LD H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C
    Text: H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H7N1005LD, H7N1005LS, H7N1005LM REJ03G0391-0200 PRSS0004AE-A PRSS0004AE-B H7N1005LD H7N1005LS PRSS0004AE-C H7N1005LMTL-E H7N1005LD H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjp3053

    Abstract: RJP3065 RJP3063 RJP3053DPP RJP2557 Rjp30 RJP3065DPP RJP3057 RJP3063DPP RJP4065
    Text: April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE sat High-speed switching PDP System PDP trends Scan IC Y Panel Sustain circuit X Power device High breakdown


    Original     		PDF H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P rjp3053 RJP3065 RJP3063 RJP3053DPP RJP2557 Rjp30 RJP3065DPP RJP3057 RJP3063DPP RJP4065

    H7N1005LD

    Abstract: H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF