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    Abstract: H650TB Hind Rectifiers thyristor phase control rectifier specification of reverse conducting thyristor 1200 A thyristor Hirect
    Text: PHASE CONTROL THYRISTOR H650TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-600 V 125 200-600 V 125 125 40 40 mA mA 650 A 1020 A 14 kA 980 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage


    Original     		PDF H650TBXX June-2008 H650TBXX H650TB Hind Rectifiers thyristor phase control rectifier specification of reverse conducting thyristor 1200 A thyristor Hirect

    semiconductor

    Abstract: hirect H507CH Hirect diode H400TB
    Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5


    Original     		PDF