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    H5N3011 Search Results

    H5N3011 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    H5N3011P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 88A 48Mohm To-3P Visit Renesas Electronics Corporation
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    H5N3011 Price and Stock

    Rochester Electronics LLC H5N3011P80-E-T2

    N-CHANNEL POWER MOSFET
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    DigiKey H5N3011P80-E-T2 Bulk 22
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    Renesas Electronics Corporation H5N3011P-E

    NCH POWER MOSFET 300V 88A 48MOHM TO-3P - Trays (Alt: H5N3011P-E)
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    Avnet Americas H5N3011P-E Tray 200
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    Renesas Electronics Corporation H5N3011P80-E#T2

    H5N3011P80-E#T2
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    Verical H5N3011P80-E#T2 4,770 23
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    Rochester Electronics H5N3011P80-E#T2 4,770 1
    • 1 $13.14
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    • 1000 $11.17
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    H5N3011 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H5N3011P Renesas Technology Silicon N Channel MOS FET Original PDF
    H5N3011P Renesas Technology MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff ( us) typ: -; Package: TO-3P Original PDF
    H5N3011P-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    H5N3011 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H5N3011P

    Abstract: H5N3011P-E H5N3011
    Text: H5N3011P Silicon N Channel MOS FET High Speed Power Switching REJ03G0385-0100Z Rev.1.00 Jul.07.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings


    Original     		H5N3011P REJ03G0385-0100Z H5N3011P H5N3011P-E H5N3011 PDF

    Untitled

    Abstract: No abstract text available
    Text: H5N3011P Silicon N Channel MOS FET High Speed Power Switching REJ03G0385-0200 Rev.2.00 Aug.05.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings


    Original     		H5N3011P REJ03G0385-0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    H5N3011P

    Abstract: H5N3011P-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF