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    H5N2522LS Search Results

    H5N2522LS Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2522LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 20A 180Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
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    H5N2522LS Price and Stock

    Renesas Electronics Corporation H5N2522LSTL-E

    MOSFET N-CH 250V 20A 4LDPAK
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    Avnet Americas H5N2522LSTL-E Reel 1,000
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    H5N2522LS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H5N2522LS Renesas Technology MOSFET, Switching; VDSS (V): 250; ID (A): 20; Pch : -; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1300; toff ( us) typ: -; Package: LDPAK (S)- (1) Original PDF
    H5N2522LSTL-E Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 20A LDPAK Original PDF

    H5N2522LS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H5N2522LS

    Abstract: H5N2522LSTL-E
    Text: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B dissipatio9044 H5N2522LS H5N2522LSTL-E PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B PDF

    H5N2522LS

    Abstract: H5N2522LSTL-E
    Text: H5N2522LS Silicon N Channel MOS FET High Speed Power Switching REJ03G1667-0100 Rev.1.00 Apr 23, 2008 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B


    Original     		H5N2522LS REJ03G1667-0100 PRSS0004AE-B H5N2522LS H5N2522LSTL-E PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Hdd spindle motor

    Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
    Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts


    Original     		O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA PDF