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    HYB18M512160AF

    Abstract: h5ms1g22 MT46H32M32LF VIA10 H5MS1G22MFP HYB18M1G320BF-7.5 MA10 AN3963 175756
    Text: Freescale Semiconductor Application Note Document Number: AN3963 Rev. 0, 03/2010 Interfacing DDR Memories with the i.MX31 by Multimedia Application Division Freescale Semiconductor, Inc. Austin, TX This application note describes the different considerations


    Original     		PDF AN3963 HYB18M512160AF h5ms1g22 MT46H32M32LF VIA10 H5MS1G22MFP HYB18M1G320BF-7.5 MA10 AN3963 175756

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		PDF 256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR

    hynix ddr ram

    Abstract: H5MS1222EFP
    Text: 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128Mbit 4Mx32bit) 128Mbit 32bit) H5MS1222EFP 32bits) hynix ddr ram