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    3g mobile MOTHERBOARD CIRCUIT diagram

    Abstract: H55S1222EFP mobile MOTHERBOARD CIRCUIT diagram H55s1222
    Text: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 4Mx32bit) 1128Mbit H55S1222EFP 32bits 200us 3g mobile MOTHERBOARD CIRCUIT diagram mobile MOTHERBOARD CIRCUIT diagram H55s1222

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		PDF 256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR

    Untitled

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 4Mx32bit) 1128Mbit H55S1222EFP 32bits 200us