2N06LH5
Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055
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SPP80N06S2L-H5
SPB80N06S2L-H5
Q67060-S6054
Q67060-S6055
2N06LH5
BSPP80N06S2L-H5
BSPB80N06S2L-H5,
2N06LH5
S6054
DIODE H5 SMD
Q67060-S6055
smd diode H5
SPB80N06S2L-H5
ANPS071E
SPP80N06S2L-H5
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2N06LH5
Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054
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SPP80N06S2L-H5
SPB80N06S2L-H5
Q67060-S6054
Q67060-S6055
2N06LH5
BSPP80N06S2L-H5
BSPB80N06S2L-H5,
2N06LH5
DIODE H5 SMD
Q67060-S6055
S6054
smd diode H5
ANPS071E
SPB80N06S2L-H5
SPP80N06S2L-H5
2N06
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2N06LH5
Abstract: Q67060-S6055 Q67060-S6054 BSPP80N06S2L-H5 smd diode 1410 TC320
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • 175°C operating temperature 5 mΩ 80 P- TO263 -3-2 • Avalanche rated V A P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-H5
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SPP80N06S2L-H5
SPB80N06S2L-H5
SPB80N06S2L-H5
Q67060-S6054
Q67060-S6055
2N06LH5
2N06LH5
BSPP80N06S2L-H5
BSPB80N06S2L-H5,
Q67060-S6055
smd diode 1410
TC320
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PDF
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2N06H5
Abstract: No abstract text available
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 R DS on 5.5 m ID 80 A P- TO263 -3-2 Avalanche rated V P- TO220 -3-1 dv/dt rated Type SPP80N06S2-H5 Package
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
Q67060-S6053
2N06H5
BSPP80N06S2-H5
BSPB80N06S2-H5,
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BAV99W
Abstract: H5 MARKING
Text: SEMICONDUCTOR BAV99W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BAV99W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV99W
BAV99W
H5 MARKING
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BCW89
Abstract: H5 MARKING
Text: SEMICONDUCTOR BCW89 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BCW89 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BCW89
OT-23
BCW89
H5 MARKING
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2N06H5
Abstract: No abstract text available
Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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SPP80N06S2-H5
SPB80N06S2-H5
P-TO263-3-2
P-TO220-3-1
Q67060-S6052
2N06H5
2N06H5
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Untitled
Abstract: No abstract text available
Text: H5 Ball Bearing Optical Shaft Encoder Page 1 of 6 Description The H5 series ball bearing optical shaft encoder has a molded polycarbonate housing and utilizes either a 5-pin or 10-pin finger-latching connector. This noncontacting rotary to digital converter is designed to provide digital feedback
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10-pin
10-pin
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DIODE H5 SMD
Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
2N06H5
Q67060-S6053
BSPP80N06S2-H5
BSPB80N06S2-H5,
DIODE H5 SMD
2n06h5
smd diode H5
70H100
ANPS071E
SPB80N06S2-H5
SPP80N06S2-H5
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PDF
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2N06LH5
Abstract: No abstract text available
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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SPP80N06S2L-H5
SPB80N06S2L-H5
P-TO220-3-1
P-TO263-3-2
P-TO220-3-1
Q67060-S6054
Q67060-S6055
2N06LH5
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PDF
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2N06LH5
Abstract: No abstract text available
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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SPP80N06S2L-H5
SPB80N06S2L-H5
P-TO263-3-2
P-TO220-3-1
Q67060-S6054
2N06LH5
2N06LH5
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PDF
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26c32
Abstract: marking e5 5Pin
Text: H5 Ball Bearing Optical Shaft Encoder Page 1 of 5 Description The H5 series ball bearing optical shaft encoder has a molded polycarbonate housing and utilizes either a 5-pin or 10-pin finger-latching connector. This noncontacting rotary to digital converter is designed to provide digital feedback
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10-pin
10-pin
26c32
marking e5 5Pin
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PDF
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2N06LH5
Abstract: smd diode marking G12 TRANSISTOR SMD MARKING CODE h5 DIODE H5 SMD smd marking g12 H5 SMD H5 smd diodE smd H5 T ANPS071E IPB80N06S2L-H5
Text: IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N06S2L-H5
IPP80N06S2L-H5
PG-TO263-3-2
PG-TO220-3-1
SP0002-19068
2N06LH5
2N06LH5
smd diode marking G12
TRANSISTOR SMD MARKING CODE h5
DIODE H5 SMD
smd marking g12
H5 SMD
H5 smd diodE
smd H5 T
ANPS071E
IPB80N06S2L-H5
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2N06H5
Abstract: smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06
Text: IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.2 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N06S2-H5
IPP80N06S2-H5
PG-TO263-3-2
PG-TO220-3-1
SP0002-18162
2N06H5
2N06H5
smd marking g24
DIODE H5 SMD
ANPS071E
IPB80N06S2-H5
IPP80N06S2-H5
PG-TO263-3-2
2N06
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PDF
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2N06H5
Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
2N06H5
Q67060-S6053
BSPP80N06S2-H5
BSPB80N06S2-H5,
2N06H5
ANPS071E
SPB80N06S2-H5
SPP80N06S2-H5
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PDF
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55b7
Abstract: LG 7CA cxa75
Text: 3C= '.? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@ 0 E5G98 *( L ) >J 0 /( ]" ) >J 0 )( $; *&) 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
55b7
LG 7CA
cxa75
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PDF
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marking 7ca
Abstract: 55b7 57gi C89T
Text: 3C=*'-? $ =@6" $ ' F ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T ' C;=7 @9I9@ 0 E5G98 +( L ) >J 0 -/ ]" ) >J 0 1+ $; *&+ 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC + " /. * +
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5B79A
577CE
marking 7ca
55b7
57gi
C89T
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PDF
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89EB
Abstract: No abstract text available
Text: 3C= +? @Y\R>@Cb ' : .99' 64;.9(>.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@ 0 E5G98 *( L ) >J 0 ),( ]" ) >J 0 *-( $; )&- 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
89EB
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PDF
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55b7
Abstract: C89T marking BM marking A9
Text: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J 0 */( $; T ' C;=7 @9I9@ 0 E5G98 %)&- 7 T I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
55b7
C89T
marking BM
marking A9
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PDF
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LG 7CA
Abstract: 8CJB cxa75 marking 7CA
Text: 3C= ',? @Y\R>@Cc ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@ 0 E5G98 *( L ) >J 0 -( ]" ) >J 0 0- $; *&- 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC
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Original
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5B79A
577CE
LG 7CA
8CJB
cxa75
marking 7CA
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PDF
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LG 7CA
Abstract: No abstract text available
Text: 3B= ,@ # <?5" # & E $ & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ) ;J T H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 ' 9I9@ 0 E5G98 %*( L ) >J 0 )-( ]" ) >J 0 *0( $; %)&- 7 T I5@5B7<9 E5G98 G>%KJFG. T , H5@=:=98 577CE8=B; GC
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Original
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5B79A
577CE
LG 7CA
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PDF
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DMA364A3
Abstract: No abstract text available
Text: DMA364A3 Tentative Total pages page DMA364A3 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : H5 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C
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DMA364A3
DMA364A3
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PDF
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TFS246H
Abstract: TFS246H5
Text: Filename: tfs246h5.doc version 1.1 VI TELEFILTER 08.05.2002 Filter Specification TFS 246 H5 1/5 Measurement condition °C dBm Ambient temperature: 23 Input power level: Terminating impedances * Input: Output: External coil: 400 Ohm ║ -2,4 pF 400 Ohm ║ -2,4 pF
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tfs246h5
TFS246H
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PDF
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BC 104 capacitor
Abstract: vishay capacitors lead spacing Vishay Capacitor marking VISHAY MARKING VISHAY MARKING CODE Vishay capacitor code marking BC 104 capacitor capacitance LOGO marking CODE Wb vishay body marking
Text: Dimensions and Marking Vishay Multilayer Ceramic Dipped Radial Capacitors 50 VDC, 100 VDC, 200 VDC and 500 VDC DIMENSIONS Wb T Wb H H SH SH L L 5.0 ± 0.8 2.5 ± 0.8 L2 H5 Component outline for lead spacing 2.5 mm ± 0.8 mm straight leads Component outline for
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18-Jan-06
BC 104 capacitor
vishay capacitors lead spacing
Vishay Capacitor marking
VISHAY MARKING
VISHAY MARKING CODE
Vishay capacitor code marking
BC 104 capacitor capacitance
LOGO
marking CODE Wb
vishay body marking
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PDF
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