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    H3E TRANSISTOR Search Results

    H3E TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H3E TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EV76C570

    Abstract: D1212 Transistor sensor cmos CLCC 24 layout JEDEC-JESD47 CLCC-48 package ev76 JESD47 p1599 "saturation value" Color Filter Array CFA
    Text: EV76C570 2 Mpixels B&W and Color CMOS Image sensor FEATURES • 2 million 1600 x 1200 pixels, 4.5 µm square pixels with micro-lens • Optical format 1/1.8” • 50 fps@ full resolution Embedded functions: • Image Histograms and Context output • Sub-sampling / binning


    Original     		PDF EV76C570 EV76C570 D1212 Transistor sensor cmos CLCC 24 layout JEDEC-JESD47 CLCC-48 package ev76 JESD47 p1599 "saturation value" Color Filter Array CFA

    EV76C560

    Abstract: CLCC-48 package EV76C560ACT-EQV transistor D1292 EV76C560ABT-EQV 2xg2 ev76 Color Filter Array CFA Camera Sensor clcc
    Text: EV76C560 1.3 Mpixels B&W and Color CMOS Image Sensor Datasheet Features • • • • • • • • • • 1.3 million 1280 x 1024 pixels, 5.3 µm square pixels with micro-lens Optical format 1/1.8" 60 fps@ full resolution Embedded functions: – Image Histograms and Context output


    Original     		PDF EV76C560 EV76C560 CLCC-48 package EV76C560ACT-EQV transistor D1292 EV76C560ABT-EQV 2xg2 ev76 Color Filter Array CFA Camera Sensor clcc

    TPC6603

    Abstract: H3E transistor
    Text: TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Unit: mm Strobe Flash Applications • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.19 V (max)


    Original     		PDF TPC6603 TPC6603 H3E transistor

    Untitled

    Abstract: No abstract text available
    Text: TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Unit: mm Strobe Flash Applications • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.19 V (max)


    Original     		PDF TPC6603

    EV76C560

    Abstract: CLCC-48 package EV76C560ACT-EQV transistor D1292 d1292 EV76C560ABT-EQV ev76 BG-38 sensor cmos CLCC 24 layout circuit diagram electronic cctv
    Text: EV76C560 1.3 Mpixels B&W and Color CMOS Image Sensor Datasheet Features • • • • • • • • • • 1.3 million 1280 x 1024 pixels, 5.3 µm square pixels with micro-lens Optical format 1/1.8" 60 fps@ full resolution Embedded functions: – Image Histograms and Context output


    Original     		PDF EV76C560 1005B EV76C560 CLCC-48 package EV76C560ACT-EQV transistor D1292 d1292 EV76C560ABT-EQV ev76 BG-38 sensor cmos CLCC 24 layout circuit diagram electronic cctv

    TPC6603

    Abstract: No abstract text available
    Text: TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Strobe Flash Applications • Unit: mm High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.19 V (max)


    Original     		PDF TPC6603 TPC6603

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.


    OCR Scan     		PDF BLV90/SL OT-172D)

    Untitled

    Abstract: No abstract text available
    Text: H3E I SEUITRON INDUSTRIES LTD TJ • 813768=1 0000105 4 « S L C B 'T - W - T 'b TM SERIES- PI-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,


    OCR Scan     		PDF DO-35 DO-41 DO-15 DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: SEMITRON INDUSTRIES LTD H3E D • fliaTflftR 000015R S B S L C B BZY9IIZ6 S E R I E S Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F081 ■Voltage Range 3V6 to 200 Volts 75 Watt Steady State ■ 5000 Watt Peak Power APPLICATIONS


    OCR Scan     		PDF 000015R BS9305-F081 9305-F-081 IN3305 IN3340 IN3341 IN3350 DO-35

    Untitled

    Abstract: No abstract text available
    Text: SEMITRON I N D U S T R I E S LTD H3E D 013760=1 0 D Ü G 2 Q G T Œ S L C B RECTIFIERS Silicon Rectifiers Operating/Storage Temperature Range -65°C to +175°C Maximum Peak Reverse Voltage Type 1.0 Maximum Forward Peak Surge Current @ 8.3ms Superimposed Maximum Reverse


    OCR Scan     		PDF DO-35 DO-41 DO-15 DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: 013760=1 Q Q Q G C m H3E D SEÎ1ITR0N INDUSTRIES LTD 2 ŒSLCB r- SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6V8 - 200 Volts ■600W Peak Pulse Power 1.5 Watt Steady State ■Provisional Release ■High Rel APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,


    OCR Scan     		PDF DO-35 DO-41 DO-15 DO-201AD

    PHILIPS MOSFET MARKING

    Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate
    Text: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T


    OCR Scan     		PDF BF988 007M3Q5 BF988 05-max OT103. MBB087 PHILIPS MOSFET MARKING SOT103 n channel depletion MOSFET transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate

    M54547P

    Abstract: H3E transistor
    Text: b 2 4 R fl2 7 h3E DG1 5 D 5 4 M IT S U B IS H I 235 D6 TL • M IT 3 M IT S U B IS H I B IPO LA R D IG IT A L , c s M54547P L O G IC B I-D IR E C T IO N A L MOTOR D R IVER W IT H OP A M P AND TR A N S IS TO R ARRAY DESCRIPTION The M54547P, BI-DIRECTIONAL MOTOR DRIVER, consists


    OCR Scan     		PDF M54547P M54547P, 600mA M54547P H3E transistor

    transistor 224-1 base collector emitter

    Abstract: No abstract text available
    Text: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­


    OCR Scan     		PDF M54568L M54568L, M54568L transistor 224-1 base collector emitter

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP b3E D • 7 [n 7 G ? b D012D11 51T «TS A J a m ^ z l— - y S uita ble i Type No. °ackaqe RP • : MIX-OSC M o s t S uitable ,F Arr'° o "c o n v • • Detector Narrow tana stop&gr» • Local Buffer Voltage Range CV LA1130


    OCR Scan     		PDF D012D11 LA1130 SIP-16 LA1135 LA1135M DIP-20S MFP-20 LA1136N LA1136NM DIP24S

    IN 5821

    Abstract: No abstract text available
    Text: 013700^ O D O ü n O T O S L C B 43E D SEMITRON INDUSTRIES LTD - T - Q - 3 .- I 3 RECTIFIERS Schottky Barrier Rectifiers Operating/Storage Temperature Range -6 5 C - 150 C Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load


    OCR Scan     		PDF Schottky/D0-41 SR102 SR103 SR104 SR105 SR106 DO-35 DO-41 IN 5821

    Untitled

    Abstract: No abstract text available
    Text: SEMITRON I N D U S T R I E S LTD 43E D m 013700^ DOOOIRI 1 BSLCB ~ T - - o 3 > ~ 7 % 'n ÌJ ÌT Ò . Schottky Barrier Rectifiers Operating/Storage Temperature Range -65°C - 150"C Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave


    OCR Scan     		PDF DO-35 DO-41 DO-15 DO-201AD

    ph 41 zener diode

    Abstract: No abstract text available
    Text: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity


    OCR Scan     		PDF S137SS1 000016M IN3379-IN3883 7/16th DO-35 DO-15 DO-201AD ph 41 zener diode

    5KV DIODE

    Abstract: h8 diode zener 127 S0T23
    Text: SEÏ1ITR0N INDUSTRIES LTD 43E D B 013703^ ODGGllb T HISL CB ' 7 7 n ^ n - z 3 SERIES AI-RANGE Transient Voltage Suppressor • Glass Passivated Junction Voltage Range 68 - 350 Volts ■ 100A Peak Puise Current APPLICATIONS MECHANICAL DATA ■ The Semitron series protection devices incorporate state of


    OCR Scan     		PDF DO-35 DO-35 DO-41 DO-15 DO-201AD 5KV DIODE h8 diode zener 127 S0T23

    GDT, semitron,

    Abstract: No abstract text available
    Text: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1- r> FIO DATA LINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current APPLICATIONS NEW GENERATION ■ Transient voltage suppression for Induced Lightning, NEMP,


    OCR Scan     		PDF ai37iai DO-35 DO-35 DO-41 DO-15 DO-201AD GDT, semitron,

    APT90GF100JN

    Abstract: sgs Thomson Thyristor G0011
    Text: ADVANCED POWER M TECHNOLOGY b3 E D • 0257^01 DOÜllflD 201 * A V P A dvanced P o w er Te c h n o lo g y APT90GF100JN 1000V 90A H SINGLE DIE ISOTOP® PACKAGE ISOTOP«' POWER MOS IV®IGBT Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE


    OCR Scan     		PDF 02S7101 APT90GF100JN E145592 08Vces OT-227 sgs Thomson Thyristor G0011

    w41 transistor

    Abstract: transistor mj 1504
    Text: ADVANCED POWER TECHNOLOGY b3E D • 0257^1 A OGÜllflO 2D1 « A V P d v a n c e d P ow er T e c h n o lo g y 9 APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP POWER MOS IV®IGBT ^ \ " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE


    OCR Scan     		PDF APT90GF100JN E145592 T-227 w41 transistor transistor mj 1504

    BY 255 diode

    Abstract: diode 77 radial lead IDL41 IN3501
    Text: SEMITRON INDUSTRIES LTD 43E D H 013700«? 000017^ 0 B S L C B SERIES Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS Semitron Certified Semiconductor Reference Diodes are intended for use as a robust and reliable standard voltage. They can replace


    OCR Scan     		PDF DO-35 DO-35 DO-41 DO-15 DO-201AD BY 255 diode diode 77 radial lead IDL41 IN3501

    T10N.C

    Abstract: melf footprint PA-080
    Text: SEHITRON INDUSTRIES LTD 43E D Û137flâ*i 0000132 7 W S L C B "T- TIO-NUTIO-NC SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current NEW GENERATION APPLICATIONS ■ Transient voltage suppression for Induced Lightning, NEMP,


    OCR Scan     		PDF 137flâ T10NC DO-35 DO-35 DO-41 DO-15 DO-201AD T10N.C melf footprint PA-080