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    H2 TRANSISTOR Search Results

    H2 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    H2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ICX208AK-A 1/2 IL08 1/4-INCH CCD IMAGE SENSOR —TOP VIEW— 12 V4 1 14 H2 V3 2 13 H1 V2 3 12 RG V1 4 11 VL 5 NC 6 GND VOUT 7 4 3 2 1 V2 V3 V4 VOUT GND 9 13 14 VCC 8 8 11 : : : : : : V1 10 SUB 10 H1, H2 RG SUB VL V1 - V4 VOUT RG H1 H2 SUB VCC VL HORIZONTAL REGISTER TRANSFER CLOCK


    Original     		PDF ICX208AK-A

    Untitled

    Abstract: No abstract text available
    Text: ICX058AK 1/2 IL08D 1/3-INCH CCD IMAGE BLOCK —TOP VIEW— 13 V4 1 16 H2 V3 2 15 H1 V2 3 14 LH1 V1 4 13 RG 5 GND VGG 6 4 3 2 1 11 SUB GND 10 VOUT 8 VDD 9 V2 V3 V4 VOUT 14 15 16 11 6 7 12 : : : : : : : : : V1 12 VL VSS 7 H1, H2 LH1 RG SUB VGG VL VSS V1 - V4


    Original     		PDF ICX058AK IL08D

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 BCW69 BCW70 C-120

    PHOTO TRANSISTOR 940nm

    Abstract: IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR
    Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode


    Original     		PDF NJL5165K-H1 NJL5165K-H2 940nm) 900nm) NJL1104B NJL1120B NJL1121B NJL1121B-S NJL6103B NJL611B PHOTO TRANSISTOR 940nm IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR

    SBP13007-H2

    Abstract: No abstract text available
    Text: SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@5.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A


    Original     		PDF SBP13007-H2 390mV O-220 O-220 SBP13007-H2

    SBP13007-H2

    Abstract: sbp13 373 ic
    Text: SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@5.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A


    Original     		PDF SBP13007-H2 390mV O-220 O-220 SBP13007-H2 sbp13 373 ic

    smd diode l15

    Abstract: 410E2 410H BTS410H2 E3062 E3062A BTS 410 D2 E3043 application note BTS
    Text: PROFET BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short circuit protection • Thermal shutdown


    Original     		PDF O-220AB/5, E3062 BTS410H2 E3062A O-220AB/5 Q67060-S6105-A2 E3043 E3043 Q67060-S6105-A3 smd diode l15 410E2 410H BTS 410 D2 E3043 application note BTS

    12v d.c. motor forward reverse diagram

    Abstract: vzd capacitor DC motor 12v connection S5 6PIN KIA6801K 12v dc motor control diagram h2 5pin
    Text: SEMICONDUCTOR KIA6801K TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT BI-DIRECTIONAL DC MOTOR DRIVER A F B Q J L G I H1 H2 KIA6801K is a monolithic integrated circuit designed for driving bi-directional DC motor with braking and speed control, and suitable for the loading motor driver of VCR, Cassette tape


    Original     		PDF KIA6801K KIA6801K 2-10pin 12v d.c. motor forward reverse diagram vzd capacitor DC motor 12v connection S5 6PIN 12v dc motor control diagram h2 5pin

    Untitled

    Abstract: No abstract text available
    Text: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview RG RD OD VO LG H2 H1 OG GND PW 1 2 3 4 5 20 19 18 17 16 6 7 8 9 10 15 14 13 12 11 Part Number CCD size MW39540AE 11 mm (type-2/3) V7 V8 V1 V2


    Original     		PDF MW39540AE MW39540AE 520k-pixel

    Untitled

    Abstract: No abstract text available
    Text: ICX039DNA-1 1/2 IL08D 1/2-INCH CCD IMAGE BLOCK —TOP VIEW— 16 V4 1 20 H2 V3 2 19 H1 V2 3 18 NC SUB 4 17 RG 5 GND 6 3 2 1 16 RD V1 6 GND 15 VL 7 GND 14 8 GND 13 VSS 9 VDD 12 VDSUB VOUT 10 17 11 VGG 19 20 4 11 12 7 : : : : : : : : : HORIZONTAL REGISTER TRANSFER CLOCK


    Original     		PDF ICX039DNA-1 IL08D

    BTO18

    Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707
    Text: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page


    OCR Scan     		PDF BC140 BTO18 sc 107 b BC190B BC190 BC 241 bo 139 BC107 2N3708 2N3707

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES


    OCR Scan     		PDF 2SC3630 2SC3630 520MHz, 150pF, 1500pF,

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40


    OCR Scan     		PDF BCW69 BCW70

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW69 = ¿[1 BCW70 = H2 PACBCAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 L 0.70 0.50 3 "1 Pin configuration 1.4 2.6 2.4 1.2 R0.1 1 = BASE 2 = EMITTER 3 = COLLECTOR


    OCR Scan     		PDF BCW69 BCW70

    M57726

    Abstract: 1452C 1ST100
    Text: MITSUBISHI RF POWER MODULE M57726 144-148MHz, 12.5V, 43W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM <D G>— Ir - > PIN : Pin VCC1 ®VCC2 0PO <©GND : : : : : II— —II—® RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2


    OCR Scan     		PDF M57726 144-148MHz, Po/77T) M57726 1452C 1ST100

    2N8306

    Abstract: BDY67 bux c 2N6250 BUX41 BUX43 esm 200 5039
    Text: Power transistors N PN « Triple diffused » Fast switching Transistors de puissance N P N <r Triple diffusés » Commutation rapide Type Case Boîtier Ptot <W *V CEX v CEO V) 'c (A) h2 i E min max I (A) /'C ^case 2.5°C V C E sa t/ lC ( l B (V) / (A ) (A)


    OCR Scan     		PDF TPu76 BUX41 BUX43 2N6250 2N8306 BDY67 bux c esm 200 5039

    transistor bc 577

    Abstract: BF680 S 170 TRANSISTOR BF 272 transistor BF272 BC 577 transistor transistor h21e transistor BC 56 BF316 J BF680
    Text: PNP silicon transistors, H F am plification Transistors PNP au silicium , am plification HF v CEO V Case / h 21E v CEsat (V ) fT / / | C/ I B (MHz) tS (ns) TSi 76 B oîtie r pt o t (mW) VCER* Typa v CEXo h2 1 E * m in * B F 272 A TO 72 170 -4 0 20 -3 850


    OCR Scan     		PDF BF680 I-21E* transistor bc 577 S 170 TRANSISTOR BF 272 transistor BF272 BC 577 transistor transistor h21e transistor BC 56 BF316 J BF680

    M57719

    Abstract: M57719N m577 rf power transistor h2
    Text: MITSUBISHI RF POWER MODULE M57719N 142-163MHz, 12.5V, 14W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM GHr > II— PIN : P in : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0PO : RF OUTPUT G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25C


    OCR Scan     		PDF M57719N 142-163MHz, M57719 M57719N m577 rf power transistor h2

    BF-139

    Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
    Text: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2


    OCR Scan     		PDF

    bc 658

    Abstract: bo 135 bc 433 bc 540 bo 139 BF139 BA 659 BC658 BCW93B BC659
    Text: s ß / F 1139 8 CB 76 T 0 18 (CB 6) s T O 39 (CB 7) T O 92 (CB 97) Silicon PN P transistors, general purpose (continued) Transistors P N P silicium, usage générai (suite) VcEO (V) Case Ptot (mW) VCER* Tamb — 25 °C h21 E h2 1 E * min *C (m A) V C Esat


    OCR Scan     		PDF

    gc 301

    Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
    Text: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )


    OCR Scan     		PDF

    M57774

    Abstract: transistor zg 220-225MHZ M5777 X4730 rf power transistor h2 Mitsubishi transistor rf final
    Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm — II— IHD PIN : Pin : RF INPUT ©VCC1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °Q unless otherwise noted


    OCR Scan     		PDF M57774 220-225MHZ, in--30 M57774 transistor zg 220-225MHZ M5777 X4730 rf power transistor h2 Mitsubishi transistor rf final

    DTL Fairchild

    Abstract: SH2002 75450-DUAL 75453 75450 SH2001 SH2200 SH2201 SH3011 75451 ttl
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS HYBRID H2 SH2714 H1 SH0002 1 Vi+ R2 5 k INPUT O1 C NU LLA r V2+ -0 2 ri NU LL A 3 E3 INV. INPU T A -O 3 NO N-INV. INPUT A 8 0 - OUTPUT V -B -0 4 e4 O UTPUT B -0 6 Q2 V +B R1 5 k . Ò 7 v 2-O 6 V i - H4 SH1S49 13-12


    OCR Scan     		PDF SH2001 O-100 SH2002 SH2200 SH2201 SH3011* DTL Fairchild 75450-DUAL 75453 75450 SH3011 75451 ttl

    ttl transistor for nand

    Abstract: 75450 SH2201 DTL Fairchild SH2001 SH1549 SH1552 SH2002 SH2200 SH3002
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS HYBRID H1 H2 S H 0002 S H 2714 1 Vi+ R2 5 k INPUT O1 NU LL A V2+ -0 2 ri NU LLA C r 3 E3 INV. INPU T A -O 3 4 NO N-INV. INPUT A 8 0 - OUTPUT 5 V -B -0 4 6 e4 O UTPUT B -0 6 Q2 V +B R1 5 k . Ò 7 C L C C C v 2-O 6 V i-


    OCR Scan     		PDF SH2001 O-100 SH2002 SH2200 SH2201 SH3011* ttl transistor for nand 75450 DTL Fairchild SH1549 SH1552 SH3002