Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    H2 TRANSISTOR Search Results

    H2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4N04H2

    Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.4 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N04S4-02 4N04H2 IPI100N04S4-02 4N04H2 diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02 PDF

    IPP100N04S4-H2

    Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.4 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-H2 IPP100N04S4-H2 4N04H2 MJ-39 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICX208AK-A 1/2 IL08 1/4-INCH CCD IMAGE SENSOR —TOP VIEW— 12 V4 1 14 H2 V3 2 13 H1 V2 3 12 RG V1 4 11 VL 5 NC 6 GND VOUT 7 4 3 2 1 V2 V3 V4 VOUT GND 9 13 14 VCC 8 8 11 : : : : : : V1 10 SUB 10 H1, H2 RG SUB VL V1 - V4 VOUT RG H1 H2 SUB VCC VL HORIZONTAL REGISTER TRANSFER CLOCK


    Original     		ICX208AK-A PDF

    Untitled

    Abstract: No abstract text available
    Text: ICX058AK 1/2 IL08D 1/3-INCH CCD IMAGE BLOCK —TOP VIEW— 13 V4 1 16 H2 V3 2 15 H1 V2 3 14 LH1 V1 4 13 RG 5 GND VGG 6 4 3 2 1 11 SUB GND 10 VOUT 8 VDD 9 V2 V3 V4 VOUT 14 15 16 11 6 7 12 : : : : : : : : : V1 12 VL VSS 7 H1, H2 LH1 RG SUB VGG VL VSS V1 - V4


    Original     		ICX058AK IL08D PDF

    BCW69

    Abstract: BCW70
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER


    Original     		OT-23 BCW69 BCW70 C-120 BCW69 BCW70 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		OT-23 BCW69 BCW70 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER


    Original     		OT-23 BCW69 BCW70 C-120 PDF

    PHOTO TRANSISTOR 940nm

    Abstract: IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR
    Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode


    Original     		NJL5165K-H1 NJL5165K-H2 940nm) 900nm) NJL1104B NJL1120B NJL1121B NJL1121B-S NJL6103B NJL611B PHOTO TRANSISTOR 940nm IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR PDF

    SBP13007-H2

    Abstract: No abstract text available
    Text: SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@5.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A


    Original     		SBP13007-H2 390mV O-220 O-220 SBP13007-H2 PDF

    SBP13007-H2

    Abstract: sbp13 373 ic
    Text: SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@5.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A


    Original     		SBP13007-H2 390mV O-220 O-220 SBP13007-H2 sbp13 373 ic PDF

    IR PHOTO DIODE

    Abstract: PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2
    Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode


    Original     		NJL5165K-H1 NJL5165K-H2 940nm) 900nm) 850nm) NJL1104B NJL1120B NJL1121B NJL1121B-S NJL1127L IR PHOTO DIODE PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2 PDF

    ST Microelectronics Transistors

    Abstract: transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70
    Text: BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 69 H1 BCW 70 H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		BCW69 BCW70 OT-23 ST Microelectronics Transistors transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70 PDF

    smd diode l15

    Abstract: 410E2 410H BTS410H2 E3062 E3062A BTS 410 D2 E3043 application note BTS
    Text: PROFET BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short circuit protection • Thermal shutdown


    Original     		O-220AB/5, E3062 BTS410H2 E3062A O-220AB/5 Q67060-S6105-A2 E3043 E3043 Q67060-S6105-A3 smd diode l15 410E2 410H BTS 410 D2 E3043 application note BTS PDF

    Untitled

    Abstract: No abstract text available
    Text: NJL5165K-H2 PHOTO REFLECTOR • GENERAL DESCRIPTION OUTUNE typ. Unit: mm The NJL5165K-H2 is photo reflector, which consist of high power infrared emitting diode and high sensitve Si photo transistor to be assembled with a holder which is made to be easier to set its position from the substrate.


    OCR Scan     		NJL5165K-H2 NJL5165K-H2 PDF

    BC 641

    Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
    Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND


    OCR Scan     		BCW69 BCW70 OT-23 06B10 BCW69/BCW70 OT-23 0076D2b PDF

    smd transistor 7ET

    Abstract: No abstract text available
    Text: SIEMENS ñ23SbüS GGTEflM? 7ET • PROFET BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation * * * * * * * * Overload protection Current limitation


    OCR Scan     		30nAtyp BTS410H2 fl235bOS smd transistor 7ET PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES


    OCR Scan     		2SC3630 2SC3630 520MHz, 150pF, 1500pF, PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40


    OCR Scan     		BCW69 BCW70 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:I3CW69 - H1 BCW70 - H2 BCW69R - H4 BCW70R - H5 ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM B O L Collector-Base Voltage Collector-Emitter Voltage VA LU E UNIT V CBO -50 V V CES -50


    OCR Scan     		BCW69 BCW70 I3CW69 BCW70 BCW69R BCW70R -10/iA, PDF

    BCW70

    Abstract: BCW69 ic 810
    Text: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BCW69 = A l BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.60 0.40 _K02_ 0.89 _2.00_


    OCR Scan     		BCW69 BCW70 BCW69 BCW70 ic 810 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW69 = ¿[1 BCW70 = H2 PACBCAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 L 0.70 0.50 3 "1 Pin configuration 1.4 2.6 2.4 1.2 R0.1 1 = BASE 2 = EMITTER 3 = COLLECTOR


    OCR Scan     		BCW69 BCW70 PDF

    5gs smd transistor

    Abstract: zl ITT zener BTS 732 Zener diode 5.6 itt 410H Zener diode itt 56-4 410E2 AUTO DIODE vow Zener diode itt 150 zener diode ITT
    Text: flE3Sb05 OD^ÔM? SIEM ENS 7ET • PROFEI BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation * Overload protection * Current limitation * Short circuit protection


    OCR Scan     		flE3Sb05 flS35bOS 5gs smd transistor zl ITT zener BTS 732 Zener diode 5.6 itt 410H Zener diode itt 56-4 410E2 AUTO DIODE vow Zener diode itt 150 zener diode ITT PDF

    BCW70

    Abstract: BCW69 ic 353 hz
    Text: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW69 = £ri BCW70 = H2 PACKAGE O UTLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.4« 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.89* 0.60


    OCR Scan     		BCW69 BCW70 BCW69 23fl33Â BCW70 ic 353 hz PDF