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    4N04H2

    Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.4 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N04S4-02 4N04H2 IPI100N04S4-02 4N04H2 diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02

    IPP100N04S4-H2

    Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.4 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-H2 IPP100N04S4-H2 4N04H2 MJ-39