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    H2 SD TRANSISTOR Search Results

    H2 SD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H2 SD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC


    Original     		PDF STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100

    STP53N08

    Abstract: No abstract text available
    Text: STP53N08 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP53N08 80 V < 0.024 Ω 53 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP53N08 100oC O-220 STP53N08

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP4NA100 100oC O-220 DD 127 D TRANSISTOR STP4NA100

    STP60N06

    Abstract: STP60N05-14 STP60N06-14
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP60N05-14 STP60N06-14 100oC O-220 STP60N06 STP60N05-14 STP60N06-14

    P80N06-10

    Abstract: p80n06 STP80N06-10
    Text: STP80N06-10 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED


    Original     		PDF STP80N06-10 P80N06-10 O-220 P80N06-10 p80n06 STP80N06-10

    STP53N08

    Abstract: STP53
    Text: STP53N08 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP53N08 80 V < 0.024 Ω 53 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP53N08 100oC O-220 STP53N08 STP53

    P80N03

    Abstract: P80N03L-06
    Text: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID ST P80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP80N03L-06 P80N03L-06 100oC 175oC O-220 P80N03 P80N03L-06

    P60N06

    Abstract: P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P60N05-14 ST P60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP60N05-14 STP60N06-14 P60N05-14 P60N06-14 100oC O-220 P60N06 P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06

    STP2NA50

    Abstract: STP2NA50FI P011C
    Text: STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP2NA50 STP2NA50FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V <4Ω <4Ω 2.8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		PDF STP2NA50 STP2NA50FI 100oC O-220 ISOWATT220 STP2NA50 STP2NA50FI P011C

    IRF530

    Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
    Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF530 IRF530FI IRF530F 100oC 175oC O-220 O-220FI IRF530 transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC


    Original     		PDF STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100

    p80n05

    Abstract: No abstract text available
    Text: STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N05-09 • ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP80N05-09 P80N05-09 O-220 p80n05

    STP80N03L-06

    Abstract: No abstract text available
    Text: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID STP80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP80N03L-06 100oC 175oC O-220 STP80N03L-06

    STP80N06-10

    Abstract: STP80N06
    Text: STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED


    Original     		PDF STP80N06-10 O-220 STP80N06-10 STP80N06

    BUZ10

    Abstract: buz10 MOROCCO
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ10 100oC 175oC O-220 BUZ10 buz10 MOROCCO

    BUZ72A

    Abstract: BUZ72A DATASHEET thomson tr 62
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ72A 100oC 175oC O-220 BUZ72A BUZ72A DATASHEET thomson tr 62

    BUZ11A

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 BUZ11A

    buz11a circuit

    Abstract: BUZ11A
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 buz11a circuit BUZ11A

    STP16N10L

    Abstract: No abstract text available
    Text: STP16N10L N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR TYPE STP16N10L • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.14 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP16N10L O-220 100oC 175oC STP16N10L

    STP45N10

    Abstract: STP45N10FI
    Text: STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.035 Ω < 0.035 Ω 45 A 24 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP45N10 STP45N10FI O-220/TO-220FI 100oC O-220 ISOWATT220 STP45N10 STP45N10FI

    STP60N06-14

    Abstract: STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP60N05-14 STP60N06-14 100oC O-220 STP60N06-14 STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150

    P3NA100

    Abstract: P3NA1 P3NA STP3NA100 STP3NA100FI p3na10
    Text: STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA100 STP3NA100F I • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V 1000 V <5 Ω < 5Ω 3.5 A 2 A TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		PDF STP3NA100 STP3NA100FI STP3NA100F 100oC O-220 O-220FI P3NA100 P3NA1 P3NA STP3NA100 STP3NA100FI p3na10

    P3NA90FI

    Abstract: P3NA90 P3NA STP3NA90 STP3NA90FI
    Text: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P3NA90 ST P3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STP3NA90 STP3NA90FI P3NA90 P3NA90FI 100oC O-220 ISOWATT220 P3NA90FI P3NA90 P3NA STP3NA90 STP3NA90FI

    STP3NA90

    Abstract: STP3NA90FI
    Text: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STP3NA90 STP3NA90FI 100oC O-220 ISOWATT220 STP3NA90 STP3NA90FI