Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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38H5000
5SYA1177-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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40H4000
5SYA1176-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 4570 7180 73x103 0.8 0.107 Rectifier Diode V A A A V m 5SDD 50N5500 Doc. No. 5SYA1169-00 Aug 11 • Patented free-floating silicon technology Very low on-state losses Optimum power handling capability
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50N5500
5SYA1169-00
CH-5600
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Abstract: No abstract text available
Text: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V m 5SDD 33L5500 Doc. No. 5SYA1168-00 Aug 10 • Patented free-floating silicon technology Very low on-state losses Optimum power handling capability
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33L5500
5SYA1168-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)
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G4000EC450
G4000EC450
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40A GTO thyristor
Abstract: GTO thyristor 4500V 4000A G4000EC450 GTO thyristor GTO thyristor datasheet THYRISTOR GTO FT40
Text: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)
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G4000EC450
G4000EC450
40A GTO thyristor
GTO thyristor 4500V 4000A
GTO thyristor
GTO thyristor datasheet
THYRISTOR GTO
FT40
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GTO thyristor
Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4502
40L4502
CH-5600
GTO thyristor
ABB GTO
ABB thyristor 5
THYRISTOR GTO
gto peak reverse voltage test abb
GTO thyristor ABB
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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48H3200
5SYA1182-00
CH-5600
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5sya2020
Abstract: 5SDD40H4000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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40H4000
5SYA1176-01
CH-5600
5sya2020
5SDD40H4000
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.
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51L2800
5SYA1103-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V 5SDD 33L5500 mW Doc. No. 5SYA1168-01 Apr 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
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33L5500
5SYA1168-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1400 25x103 1.2 0.32 2200 V A A V mΩ V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO
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14H4505
5SYA1110-02
CH-5600
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thyristor lifetime
Abstract: No abstract text available
Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.
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703-996-8200x105.
DE-FG0207ER84712,
thyristor lifetime
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
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14H4505
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = Rectifier Diode 5500 V 4570 A 7180 A 73•103 A 0.8 V 0.107 m 5SDD 50N5500 Doc. No. 5SYA1169-01 Apr. 13 • Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability
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50N5500
5SYA1169-01
CH-5600
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14h45
Abstract: Abb diode 14H4505 a3700 5sdf14h4505
Text: Key Parameters VRRM = 4500 IFAVM = 1400 IFRMS = 2200 IFSM = 25 VF0 = 1.20 rF = 0.32 VDClink = 2200 V A A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses
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14H4505
CH-5600
14h45
Abb diode
14H4505
a3700
5sdf14h4505
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gto 2400 capacitor
Abstract: Siemens matsushita capacitor B25855C1305K004 ISO 4035 B25855-C7106-K004 B25855C3105 B25855C3155K004 siemens CAPACITOR 40/085/56 B25855C8106K004 B25855C8205K004
Text: MKV AC Capacitors GTO Snubbering and Clamping B 25 855 High rate of voltage rise High peak-current capability Extremely low inductance Construction ● ● ● ● ● ● ● ● Self-healing Plastic dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable
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B25855-C2255-K004
gto 2400 capacitor
Siemens matsushita capacitor
B25855C1305K004
ISO 4035
B25855-C7106-K004
B25855C3105
B25855C3155K004
siemens CAPACITOR 40/085/56
B25855C8106K004
B25855C8205K004
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Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
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14H4505
5SYA1110-02
CH-5600
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5SGA40L4501
Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4501
CH-5600
5SGA40L4501
ABB 5SGA
40L4501
ABB thyristor 5
GTO thyristor ABB
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MITSUBISHI GATE TURN-OFF THYRISTORS
Abstract: 200a gto gto 200A FGR3000CV-90DA GTO 100A gto 2400 GTO switching test mitsubishi gto mitsubishi 4500V 900A
Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FGR3000CV-90DA Dimensions in mm GATE WHITE 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 26 ± 0.5 ● ITQRM Repetitive controllable on-state current .3000A
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FGR3000CV-90DA
MITSUBISHI GATE TURN-OFF THYRISTORS
200a gto
gto 200A
FGR3000CV-90DA
GTO 100A
gto 2400
GTO switching test mitsubishi
gto mitsubishi
4500V 900A
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GTO switching test mitsubishi
Abstract: gto 100A 200a gto FGR3000FX-90DA GTO switching test GTO peak reverse test mitsubishi
Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FGR3000FX-90DA Dimensions in mm GATE WHITE 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 26 ± 0.5 ● ITQRM Repetitive controllable on-state current .3000A
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FGR3000FX-90DA
GTO switching test mitsubishi
gto 100A
200a gto
FGR3000FX-90DA
GTO switching test
GTO peak reverse test mitsubishi
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FG600AH
Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Text: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC
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00D1A53
80ation
MAX/10
FG600AH
FG1800AH
FG600AV
FG1000AL
FG1000A
fg2000av
FG1000AH
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7,5 kw mitsubishi inverter
Abstract: gto 100A 100A GTO GTO peak reverse test mitsubishi ODC20 GTO switching test mitsubishi
Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FG R3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Voltage class Parameter Symbol Unit 90DA Repetitive peak off-state voltage*
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R3000FX-90DA
7,5 kw mitsubishi inverter
gto 100A
100A GTO
GTO peak reverse test mitsubishi
ODC20
GTO switching test mitsubishi
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GTO switching test
Abstract: 100A GTO gto mitsubishi GTO peak reverse test mitsubishi FGR3000FX-90DA GTO switching test mitsubishi dv 700 inverter M1037 GTO 5000 V mitsubishi gto
Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000FX-90DA • Itq rm Repetitive controllable on-state current. 3 0 0 0 A • lT AV A v e ra g e o n -s ta te c u r r e n t . 7 8 0 A
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R3000FX-90
FGR3000FX-90DA
GTO switching test
100A GTO
gto mitsubishi
GTO peak reverse test mitsubishi
FGR3000FX-90DA
GTO switching test mitsubishi
dv 700 inverter
M1037
GTO 5000 V
mitsubishi gto
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