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    GTO 10A 500V Search Results

    GTO 10A 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    2SK1832-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3Pfm Visit Renesas Electronics Corporation
    RJK5035DPP-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 850Mohm To-220Fp Visit Renesas Electronics Corporation
    2SK1516-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3P Visit Renesas Electronics Corporation
    2SK1162-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3P Visit Renesas Electronics Corporation

    GTO 10A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM450D, FRM450R, FRM450H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDB12N50U FDB12N50U

    P channel MOSFET 1A

    Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
    Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM450D, FRM450R, FRM450H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD P channel MOSFET 1A 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106

    Untitled

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT

    FQPF10N50CF

    Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N50CF FQPF10N50CF FQPF10N50CF FQPF Series mosfet 500v 10A mosfet 10a 500v

    FDPF*12n50ut

    Abstract: FDPF12N50UT FDP12N50U FDP12N50
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut FDP12N50

    FDPF*12n50ut

    Abstract: fdpf12n50ut mosfet 10a 500v FDP12N50U
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut mosfet 10a 500v

    FDB12N50U

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDB12N50U FDB12N50U

    IRFP450A

    Abstract: diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet
    Text: IRFP450A 14A, 500V, 0.40 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche


    Original     		PDF IRFP450A O-247 IRFP450A diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDB12N50U FDB12N50U

    GTO thyristor 4500V 4000A

    Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
    Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA


    Original     		PDF 500V/1500A FD1500BV-90DA 500V/500A FD500JV-90DA GTO thyristor 4500V 4000A FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit

    FDPF*12n50ut

    Abstract: FDPF12N50UT
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut

    GTO 100A 500V

    Abstract: FDH15N50 TO-220 JEDEC FDP15N50
    Text: FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt


    Original     		PDF FDH15N50 FDP15N50 O-220 O-247 GTO 100A 500V TO-220 JEDEC FDP15N50

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP20N50F / FDPF20N50FT N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP20N50F FDPF20N50FT FDPF20N50FT

    power mosfet 500v 20a circuit

    Abstract: FDPF20N50F
    Text: UniFETTM FDP20N50F / FDPF20N50F tm N-Channel MOSFET 500V, 20A, 0.26Ω Features Description • RDS on = 0.21Ω ( Typ.)@ VGS = 10V, ID = 10A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP20N50F FDPF20N50F FDPF20N50F power mosfet 500v 20a circuit

    power mosfet 500v 20a circuit

    Abstract: FDP20N50F FDPF20N50FT
    Text: UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP20N50F FDPF20N50FT FDPF20N50FT power mosfet 500v 20a circuit

    FDPF10N50FT

    Abstract: fdpf10n50 FDP10N50F
    Text: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP10N50F FDPF10N50FT FDPF10N50FT fdpf10n50

    FDPF10N50FT

    Abstract: No abstract text available
    Text: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP10N50F FDPF10N50FT FDPF10N50FT

    FDPF20N50FT

    Abstract: FAST DIODE FDP20N50F 20A p MOSFET mosfet 20A 500V
    Text: UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP20N50F FDPF20N50FT FDPF20N50FT FAST DIODE 20A p MOSFET mosfet 20A 500V

    FDA20N50

    Abstract: No abstract text available
    Text: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.24Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)


    Original     		PDF FDA20N50 FDA20N50

    mosfet 20A 500V

    Abstract: 500V 100A thyristors N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP20N50 power mosfet 500v 20a circuit
    Text: UniFET TM FDP20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)


    Original     		PDF FDP20N50 O-220 FDP20N50 mosfet 20A 500V 500V 100A thyristors N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v power mosfet 500v 20a circuit

    "Power Diode" 500V 20A

    Abstract: FDP20N50
    Text: UniFET TM FDP20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.24Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)


    Original     		PDF FDP20N50 O-220 "Power Diode" 500V 20A FDP20N50

    TL494 full bridge inverter

    Abstract: dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b
    Text: APPLICATION NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs By S. CLEM EN TE, a . PELLY, R. R U T T O N S H A , B. TAYLOR


    OCR Scan     		PDF 25kHz AN-946B TL494 full bridge inverter dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b

    R3000C

    Abstract: gto mitsubishi mitsubishi gto FGR3000CV-90DA GTO switching test mitsubishi sine wave inverter hs
    Text: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FG R3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000CV-90DA • Itq r m Repetitive controllable on-state current. . 3 0 0 0 A • It av A v e ra g e o n -s ta te c u r r e n t . . 9 0 0 A


    OCR Scan     		PDF R3000C FGR3000CV-90DA gto mitsubishi mitsubishi gto FGR3000CV-90DA GTO switching test mitsubishi sine wave inverter hs