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    GT60M30 Price and Stock

    Toshiba America Electronic Components GT60M301

    Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-3PL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop GT60M301 68
    • 1 -
    • 10 $29.9
    • 100 $24.5
    • 1000 $24.5
    • 10000 $24.5
    		Buy Now

    Toshiba America Electronic Components GT60M303

    INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics GT60M303 4,097
    • 1 -
    • 10 $5.653
    • 100 $3.769
    • 1000 $3.769
    • 10000 $3.769
    		Buy Now

    GT60M30 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT60M301 Toshiba Discrete IGBTs Original PDF
    GT60M301 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    GT60M301 Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) Scan PDF
    GT60M301 Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Scan PDF
    GT60M302 Toshiba Discrete IGBTs Original PDF
    GT60M302 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel MOS Type Scan PDF
    GT60M302 Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) Scan PDF
    GT60M303 Toshiba Discrete IGBTs Original PDF
    GT60M303 Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Original PDF
    GT60M303 Toshiba Discrete IGBTs Original PDF
    GT60M303 Toshiba Silicon N-channel MOS type insulated gate bipolar transistor for high power switching applications Original PDF
    GT60M303 Unknown N-channel iso-gate bipolar transistor (MOS technology) Scan PDF
    GT60M303(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 900V 60A 170W TO3P LH Original PDF

    GT60M30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT60M303

    Abstract: GT60M303 application GT60M303 circuit
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 application GT60M303 circuit

    GT60M303 application

    Abstract: GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		PDF GT60M303 GT60M303 application GT60M303

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 circuit igbt failure rate

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303

    GT60M303 application

    Abstract: GT60M303 gt60m303 application notes
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 gt60m303 application notes

    GT60M303

    Abstract: TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C

    TOSHIBA IGBT GT60M303

    Abstract: GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C
    Text: GT60M303 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60M303 ○ 並列共振スイッチング用 単位: mm ○ 第 4 世代 z 高速 FRD を内蔵しています。 z 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT60M303 2-21F2C 20070701-JA TOSHIBA IGBT GT60M303 GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C

    GT60M303

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.


    OCR Scan     		PDF GT60M303 25//s GT60M303

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.


    OCR Scan     		PDF GT60M301

    GT60M302

    Abstract: P channel 600v 20a IGBT
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)


    OCR Scan     		PDF GT60M302 GT60M302 P channel 600v 20a IGBT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD


    OCR Scan     		PDF GT60M303 25//s

    GT60M301

    Abstract: 20A igbt
    Text: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.


    OCR Scan     		PDF GT60M301 GT60M301 20A igbt

    transistor fc 1013

    Abstract: No abstract text available
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •


    OCR Scan     		PDF GT60M302 transistor fc 1013

    GT60M301

    Abstract: HEI100
    Text: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed :GBT tf= 0.25¿¿s Typ.


    OCR Scan     		PDF GT60M301 GT60M301 HEI100

    VQE 22

    Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • • The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq b T : tf=0.25/*s TYP.


    OCR Scan     		PDF GT60M303 VQE 22 sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M

    GT8G101

    Abstract: 2BLC 27F2C 2-21F2C GT60M302
    Text: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode


    OCR Scan     		PDF GT60M302 GT8G101 GT8G101 2BLC 27F2C 2-21F2C GT60M302

    2fy transistor

    Abstract: RJ 0822 R K J 0822
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS • The 4th Generation • FRD Included Between E m itter and Collector • Enhancem ent-Mode • High Speed IGb T : tf=0,2fy«j TYP,


    OCR Scan     		PDF GT60M303 2fy transistor RJ 0822 R K J 0822

    Untitled

    Abstract: No abstract text available
    Text: GT60M301 U nit in mm HIGH PO W ER SW ITCHING APPLICATIO N S. • • • • • The 3rd Generation FRD Included Between Em itter and Collector Enhancement-M ode High Speed IQBT : tf=0.25^s TY P. FRD : trr = 0.7^s (TYP.) Low Saturation Voltage : VCE(sa[) = 3.4V (MAX.)


    OCR Scan     		PDF GT60M301 2-21F2C

    GT60M301

    Abstract: R1244 20A igbt
    Text: SILICON N CHANNEL MOS TYPE GT60M301 U n it in m m HIGH POW ER SW ITCHING APPLICATION S. 20.5MAX. • T he 3rd G e n era tio n • FRD Included B etw een E m itte r a n d C ollector • E nhancem ent-M ode • H ig h s p e e d IGBT : tf= 0 .2 5 //s TYP. FRD


    OCR Scan     		PDF GT60M301 GT60M301 R1244 20A igbt

    GT60M301

    Abstract: GT60M 60A 150V IGBT
    Text: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm • The 3rd Generation • FRD Included Between Emitter and Collector • Enhancement-Mode • High Speed • IGBT


    OCR Scan     		PDF GT60M301 GT60M301 GT60M 60A 150V IGBT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • M A X IM U M RATINGS Ta = 25°C CARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current


    OCR Scan     		PDF GT60M302 20-5MAX. 22//s

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation • FRD Included Between Emitter and Collector • Enhancement-Mode • High Speed • IGBT tf=0.22/¿s TYP.


    OCR Scan     		PDF GT60M302

    GT60M302

    Abstract: tf022 gt60m30 GT60M
    Text: TO SH IBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation • FRD Included Between Emitter and Collector • Enhancement-Mode • High Speed • IGBT tf=0.22/¿s TYP.


    OCR Scan     		PDF GT60M302 GT60M302 tf022 gt60m30 GT60M

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753