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    GT60J Price and Stock

    Microchip Technology Inc APT60GT60JR

    IGBT MODULE 600V 93A 378W ISOTOP
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    Microchip Technology Inc APT200GT60JR

    IGBT MOD 600V 195A 500W SOT227
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    Microchip Technology Inc APT200GT60JR
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    Microchip Technology Inc APT100GT60JR

    IGBT MOD 600V 148A 500W ISOTOP
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    Microchip Technology Inc APT60GT60JRDQ3

    IGBT 600V 105A 379W SOT227
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    Microchip Technology Inc APT100GT60JRDQ4

    IGBT MOD 600V 148A 500W ISOTOP
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    GT60J Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT60J101 Toshiba Discrete IGBTs Original PDF
    GT60J101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT60J101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT60J321 Toshiba TRANS IGBT CHIP N-CH 600V 60A 3(2-21F2C) Original PDF
    GT60J321 Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT60J321 Toshiba Discrete IGBTs Original PDF
    GT60J321 Toshiba Original PDF
    GT60J322 Toshiba TRANS IGBT CHIP N-CH 600V 60A 3(2-21F2C) Original PDF
    GT60J322 Toshiba The 4th Generation Soft Switching Applications Original PDF
    GT60J322 Toshiba Original PDF
    GT60J323 Toshiba SILICON N CHANNEL IGBT Original PDF
    GT60J323 Toshiba Discrete IGBTs Original PDF
    GT60J323H Toshiba GT60J323 - TRANSISTOR 60 A, 600 V, N-CHANNEL IGBT, 2-21F2C, TO-3P, 3 PIN, Insulated Gate BIP Transistor Original PDF

    GT60J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT60J321

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		PDF GT60J321 GT60J321

    GT60J323

    Abstract: GT60J IC-3360 PF1510000
    Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)


    Original     		PDF GT60J323 GT60J323 GT60J IC-3360 PF1510000

    Untitled

    Abstract: No abstract text available
    Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)


    Original     		PDF GT60J323

    Untitled

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Unit: mm Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		PDF GT60J321 2-21F2C

    GT60J322

    Abstract: IC601
    Text: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C)


    Original     		PDF GT60J322 GT60J322 IC601

    Untitled

    Abstract: No abstract text available
    Text: GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Unit: mm Enhancement mode type High speed : tf = 0.12 s typ. (IC = 60A)


    Original     		PDF GT60J323H

    Untitled

    Abstract: No abstract text available
    Text: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode · Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF GT60J322

    GT60J322

    Abstract: No abstract text available
    Text: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications • Enhancement-mode • Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF GT60J322 GT60J322

    GT60J321

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode · High speed: tf = 0.30 µs typ. (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		PDF GT60J321 GT60J321

    GT60J321

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		PDF GT60J321 GT60J321

    60j323

    Abstract: 60J323H induction heating ic toshiba marking code transistor
    Text: GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Unit: mm Enhancement mode type High speed : tf = 0.12 s typ. (IC = 60A)


    Original     		PDF GT60J323H 60j323 60J323H induction heating ic toshiba marking code transistor

    GT60J322

    Abstract: No abstract text available
    Text: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode • Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF GT60J322 GT60J322

    induction heating handbook

    Abstract: GT60J323H 60J323H
    Text: GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Unit: mm Induction Heating Appliances • • • • • • Enhancement mode type High speed : tf = 0.12 µs typ. (IC = 60A)


    Original     		PDF GT60J323H induction heating handbook GT60J323H 60J323H

    GT60J321

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		PDF GT60J321 GT60J321

    GT60J323

    Abstract: No abstract text available
    Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)


    Original     		PDF GT60J323 60HIBA GT60J323

    60J323H

    Abstract: GT60J323H 60j323 TOSHIBA 120A igbt GT60J323
    Text: GT60J323H 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60J323H ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT60J323H 2-21F2C 20070701-JA 60J323H GT60J323H 60j323 TOSHIBA 120A igbt GT60J323

    IC601

    Abstract: GT60J321 pfs300
    Text: GT60J321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60J321 ○ 第 4 世代 ○ ソフトスイッチングインバータ用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。 •


    Original     		PDF GT60J321 2-21F2C 20070701-JA IC601 GT60J321 pfs300

    GT60J323

    Abstract: AIC15
    Text: GT60J323 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60J323 ○ 電流共振インバータスイッチング用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。


    Original     		PDF GT60J323 2-21F2C 20070701-JA GT60J323 AIC15

    GT60J323

    Abstract: 041 DIODE
    Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)


    Original     		PDF GT60J323 GT60J323 041 DIODE

    GT60J321

    Abstract: No abstract text available
    Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)


    Original     		PDF GT60J321 2-21F2C GT60J321

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9