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    GT50JR21 Search Results

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    GT50JR21 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components GT50JR21(STA1,E,S)

    IGBT 600V 50A TO-3P
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    DigiKey GT50JR21(STA1,E,S) Tube 37 1
    • 1 $6.54
    • 10 $6.54
    • 100 $6.54
    • 1000 $2.73124
    • 10000 $2.73124
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    Mouser Electronics GT50JR21(STA1,E,S) 11
    • 1 $5.84
    • 10 $4.91
    • 100 $3.97
    • 1000 $3.02
    • 10000 $2.84
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    TME GT50JR21(STA1,E,S) 1
    • 1 $4.64
    • 10 $3.68
    • 100 $3.31
    • 1000 $3.31
    • 10000 $3.31
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    EBV Elektronik GT50JR21(STA1,E,S) 21 Weeks 25
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    Toshiba America Electronic Components GT50JR21(STA1ES)

    IGBTs - Trays (Alt: GT50JR21(STA1,E,S))
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    Avnet Americas GT50JR21(STA1ES) Tray 12 Weeks 25
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    • 100 $3.1027
    • 1000 $2.94975
    • 10000 $2.94975
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    Toshiba America Electronic Components GT50JR21STA1ES

    SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel ; ECCN: EAR99
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    ComSIT USA GT50JR21STA1ES 150
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    Toshiba America Electronic Components GT50JR21STA1

    SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel ; ECCN: EAR99
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA GT50JR21STA1 100
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    GT50JR21 Datasheets (2)

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    GT50JR21 Toshiba Japanese - Transistors Original PDF
    GT50JR21 Toshiba Transistors Original PDF

    GT50JR21 Datasheets Context Search

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    GT50JR21

    Abstract: No abstract text available
    Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT50JR21 GT50JR21 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT50JR21 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT50JR21 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50JR21 ディスクリートIGBT シリコンNチャネルIGBT GT50JR21 1. 用途 • 電流共振インバータスイッチング専用 注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長


    Original
    GT50JR21 PDF