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Samsung Electro-Mechanics CIGT252010LM1R0MNE FIXED IND 1UH 3.1A 50 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CIGT252010LM1R0MNE	Cut Tape	236,703		1	1 $0.23 10 $0.176 100 $0.1368 1000 $0.10614 10000 $0.10614	Buy Now
	CIGT252010LM1R0MNE	Digi-Reel	236,703		1	1 $0.23 10 $0.176 100 $0.1368 1000 $0.10614 10000 $0.10614	Buy Now
	CIGT252010LM1R0MNE	Reel	234,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.09398	Buy Now
Samsung Electro-Mechanics CIGT252008LM2R2MNE FIXED IND 2.2UH 2A 97 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CIGT252008LM2R2MNE	Cut Tape	197,003		1	1 $0.23 10 $0.176 100 $0.1368 1000 $0.10614 10000 $0.10614	Buy Now
	CIGT252008LM2R2MNE	Digi-Reel	197,003		1	1 $0.23 10 $0.176 100 $0.1368 1000 $0.10614 10000 $0.10614	Buy Now
Hirose Electric Co Ltd GT25-2428SCF CONN SOCKET 24-28AWG CRIMP TIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25-2428SCF	Cut Tape	10,225		1	1 $0.1 10 $0.061 100 $0.0494 1000 $0.04022 10000 $0.03707	Buy Now
	GT25-2428SCF	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03278	Buy Now
Newark	GT25-2428SCF	Cut Tape	10,000		1	1 $0.082 10 $0.066 100 $0.052 1000 $0.037 10000 $0.029	Buy Now
Bristol Electronics	GT25-2428SCF		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	GT25-2428SCF				50	1 - 10 - 100 $0.0428 1000 $0.0343 10000 $0.0299	Get Quote
Avnet Abacus	GT25-2428SCF			14 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 600S360GT250XT4K CAP CER 36PF 250V NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	600S360GT250XT4K	Cut Tape	7,832		1	1 $1.37 10 $0.86 100 $0.5892 1000 $0.44519 10000 $0.44519	Buy Now
	600S360GT250XT4K	Digi-Reel	7,832		1	1 $1.37 10 $0.86 100 $0.5892 1000 $0.44519 10000 $0.44519	Buy Now
	600S360GT250XT4K	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.37383	Buy Now
Hirose Electric Co Ltd GT25H2-24DP-2.2H(99) CONN PIN HEADER PCB SMD R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25H2-24DP-2.2H(99)	Cut Tape	180		1	1 $2.52 10 $2.056 100 $2.52 1000 $2.52 10000 $2.52	Buy Now
	GT25H2-24DP-2.2H(99)	Digi-Reel	180		1	1 $2.52 10 $2.056 100 $2.52 1000 $2.52 10000 $2.52	Buy Now
Newark	GT25H2-24DP-2.2H(99)	Cut Tape	198		1	1 $2.84 10 $2.48 100 $1.99 1000 $1.53 10000 $1.42	Buy Now
TME	GT25H2-24DP-2.2H(99)				200	1 - 10 - 100 - 1000 $1.31 10000 $1.31	Get Quote

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GT25 Datasheets (82)

Part	Manufacturer	Description	Datasheet Type	PDF
GT-25	GlobTek	SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT	Original	PDF
GT-25	MCE / KDI	ATTENUATOR, PIN DIODE	Original	PDF
GT25	Thermometrics	GENERAL PURPOSE SENSOR	Original	PDF
GT-25-12	GlobTek	SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT	Original	PDF
GT25-12DP-2.2H	Hirose Electric	SMT multipin connectors; HRS No: 775-0005-4 00; No. of Positions: 12; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.2; Terminal Pitch (mm): 1.1; PCB Mount Type: SMT; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -40 to 105; General Description: Header; Right angle	Original	PDF
GT25-12DS-HU	Hirose Electric	Connectors, Interconnects - Rectangular Connectors - Housings - CONN HSG	Original	PDF
GT25-12DS-HU/RE-MD	Hirose Electric	Uncategorized - Miscellaneous - TOOL ACCY	Original	PDF
GT25-12DS-R	Hirose Electric	Connectors, Interconnects - Rectangular Connectors - Accessories - CONN RETAINER	Original	PDF
GT-25-15	GlobTek	SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT	Original	PDF
GT25-16DP-2.2H	Hirose Electric	SMT multipin connectors; HRS No: 775-0006-7 00; No. of Positions: 16; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.2; Terminal Pitch (mm): 1.1; PCB Mount Type: SMT; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -40 to 105; General Description: Header; Right angle	Original	PDF
GT25-16DP-2.2V(01)	Hirose Electric	Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN 16POS PCB	Original	PDF
GT25-2024SCF	Hirose Electric	SMT multipin connectors; HRS No: 775-0002-6 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact	Original	PDF
GT25-2428SCF	Hirose Electric	SMT multipin connectors; HRS No: 775-0013-2 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact	Original	PDF
GT25-2428SCF(01)	Hirose Electric	SMT multipin connectors; HRS No: 775-0013-2 01; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact	Original	PDF

GT25-24DP-2.2H	Hirose Electric	SMT multipin connectors; HRS No: 775-0007-0 00; No. of Positions: 24; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.2; Terminal Pitch (mm): 1.1; PCB Mount Type: SMT; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -40 to 105; General Description: Header; Right angle	Original	PDF
GT25-24DP-2.2V(01)	Hirose Electric	Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - CONN 24POS PCB	Original	PDF
GT25-2630SCF	Hirose Electric	SMT multipin connectors; HRS No: 775-0012-0 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact	Original	PDF
GT25-2630SCF(01)	Hirose Electric	SMT multipin connectors; HRS No: 775-0012-0 01; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 105; General Description: Crimp contact	Original	PDF
GT2530	GTM	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET	Original	PDF
GT2531	GTM	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET	Original	PDF

GT25 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	GT25G101 10S2C	PDF
TOSHIBA IGBT DATA BOOK Abstract: GT25Q102 GT25Q301 Text: GT25Q102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)	Original	GT25Q102 000707EAA1 TOSHIBA IGBT DATA BOOK GT25Q102 GT25Q301	PDF
Untitled Abstract: No abstract text available Text: GT25C08 GT25C08 SPI 8K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,	Original	GT25C08	PDF
GT25G101 Abstract: No abstract text available Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)	Original	GT25G101 2-10S1C GT25G101	PDF
Untitled Abstract: No abstract text available Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance : VCE sat =8V (Max.) (IC=170A) z Low Saturation Voltage z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	Original	GT25G101 2-10S1C	PDF
GT25G102 Abstract: No abstract text available Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	GT25G102 2-10S1C GT25G102	PDF
GT2531 Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS ON 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	GT2531 GT2531 OT-26	PDF
Untitled Abstract: No abstract text available Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)	Original	GT25G101 2-10S2C	PDF
Untitled Abstract: No abstract text available Text: GT250 grid-tie solar inverters High availability from a provider you can trust Easy to install and operate, the Schneider ElectricTM GT250 grid tie inverters automate startup, shut down and fault detection scenarios. They incorporate advanced Maximum Power Point Tracking technology to maximize the	Original	GT250 GT250? RS485 RS232 UL1741 DS20141002 GT250	PDF
giantec Abstract: No abstract text available Text: GT25C128 Advanced GT25C128 SPI 128K Bits Serial EEPROM Copyright 2011 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,	Original	GT25C128 MO-153 giantec	PDF
Untitled Abstract: No abstract text available Text: GT25C256 GT25C256 SPI 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,	Original	GT25C256	PDF
Toshiba transistor Ic 100A Abstract: No abstract text available Text: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e	OCR Scan	GT25Q301 120IG Toshiba transistor Ic 100A	PDF
Untitled Abstract: No abstract text available Text: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode	OCR Scan	GT25G102 2-10S2C GT25G1Q2	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA GT25J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	GT25J101	PDF

TRANSISTOR BJ 033 Abstract: GT25Q301 Text: T O S H IB A GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)	OCR Scan	GT25Q301 TRANSISTOR BJ 033 GT25Q301	PDF
GT25H101 Abstract: GT25H Opto Speed SA Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_\| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.	OCR Scan	15BKAX GT25H101-3 GT25H101 GT25H Opto Speed SA	PDF
GT25Q101 Abstract: No abstract text available Text: GT25Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. #3.3±02 20 5MAX . High Input Impedance . High Speed tf-0.5 is(Max. . Low Saturation Voltage VcE(sat)=4.0V(Max.) <=f; . Enhancement-Mode 2.5 30 + 2.5 1.0-0.25 5.4 5±0.1 5 MAXIMUM RATINGS (Ta-25°C)	OCR Scan	GT25Q101 Ta-25 2-21F1C GT25Q101	PDF
Untitled Abstract: No abstract text available Text: SILICON N CHANNEL MOS TYPE GT25G102 SM STROBE FLASH APPLICATIONS Unit in nn 10.3MAX . High Input Impedance 132, . Low Saturation Voltage : Vcg(sat)= &V(Max.) (Ic=150A) • Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL	OCR Scan	GT25G102	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A GT25Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • High Input Impedance • High Speed • Low Saturation Voltage : VGE sat = 4-0V (Max.)	OCR Scan	GT25Q101 2-21F1C	PDF
IGBT GT25q101 Abstract: GT25q101 transistor gt25q101 Text: T O S H IB A GT25Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. • High Input Impedance • High Speed • Low Saturation Voltage : V q e	OCR Scan	GT25Q101 IGBT GT25q101 GT25q101 transistor gt25q101	PDF
TRANSISTOR BJ 033 Abstract: GT25Q301 Text: TO SH IBA GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)	OCR Scan	GT25Q301 TRANSISTOR BJ 033 GT25Q301	PDF
Untitled Abstract: No abstract text available Text: GT25G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E sat = 8V (Max.) (IC = 150A)	OCR Scan	GT25G102	PDF
Untitled Abstract: No abstract text available Text: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A)	OCR Scan	GT25G102 GT25G1	PDF
Untitled Abstract: No abstract text available Text: GT25J102 TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 02 HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=U.35//s Max. • Low Saturation Voltage	OCR Scan	GT25J102 35//s	PDF

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GT25 Search Results

GT25 Price and Stock

Samsung Electro-Mechanics CIGT252010LM1R0MNE

Samsung Electro-Mechanics CIGT252008LM2R2MNE

Hirose Electric Co Ltd GT25-2428SCF

Kyocera AVX Components 600S360GT250XT4K

Hirose Electric Co Ltd GT25H2-24DP-2.2H(99)

GT25 Datasheets (82)

GT25 Datasheets Context Search

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TOSHIBA IGBT DATA BOOK

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GT25G101

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GT25G102

GT2531

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giantec

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Toshiba transistor Ic 100A

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TRANSISTOR BJ 033

GT25H101

GT25Q101

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IGBT GT25q101

TRANSISTOR BJ 033

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