Untitled
Abstract: No abstract text available
Text: GSC215 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5 @Temp (øC) (Test Condition)114 V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage.9 @I(FM) (A) (Test Condition)2.5
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GSC215
Voltage150
StyleTO-220
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GSC2156
Abstract: 6EAD GSC215 ma 709 TRANSISTOR D 2627 adj- 537
Text: ISSUED DATE :2006/03/07 REVISED DATE : GSC2156 6 0 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GSC2156 of positive, linear regulators feature low ground current 30 A typ. with low dropout voltage, making then ideal for battery applications. The space-saving SOP-8 package is attractive for “Pocket” and
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GSC2156
GSC2156
600mA
6EAD
GSC215
ma 709
TRANSISTOR D 2627
adj- 537
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE135N
SE110N
UX-C2B
SE140N
STR83159
SE130N
STR2012
Transistor AC 51
SE140
SE115N
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HVR-1X 7 diode
Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01EC0
TM1061S-L
TM1061S-R
TM1241S-L
TM1241S-R
TM1261S-L
TM1261S-R
TM1641P-L
TM1641S-L
TM1661P-L
HVR-1X 7 diode
STR80145
SE135N
hvr 1X 3 diode
semiconductor STR 20005
sk a 3120c
SE110N
ux-c2b equivalent
transistor CS 9012 PNP
STR83159
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diode ry24
Abstract: UX-C2B diode zener RM25 FMPG5F fmgg2s FMPG2F RY24 RBV150S zener 3B2 RM25 zener diode
Text: Selection Guide Rectifier Diodes Type No. I F（AV） （A） VRM（V） 40 50 60 100 200 400 600 800 1,000 I FSM （A） SFPM-5＊ 0.9 2 4 30 SFPM-6＊ 1.0 2 4 45 AM01＊ 1.0 Z ― A 35 EM01＊ 1.0 Z ― A 45 EM 1＊ 1.0 Z ― A 45 EM 1＊ 1.0 EM 2＊ 1.2
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RZ1100
RZ1125
RZ1150
RZ1175
RZ1200
EZ0150
PZ127
PZ227
PZ427
PZ628
diode ry24
UX-C2B
diode zener RM25
FMPG5F
fmgg2s
FMPG2F
RY24
RBV150S
zener 3B2
RM25 zener diode
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HVR 1X 7
Abstract: hvr-1x 7 UX-C2B HVR-1X -7 HVR-1X microwave SK HVR-1X HVR-1X 9 HVR-1X SK HVR-1X 6 HVR-1X-4
Text: 5-9. High Voltage Rectifier Diodes Ta = 25°C Absolute Maximum Ratings Type No. SHV-02 SHV-03S SHV-03 -10 -12 -14 -16 -20 -24 SHV-06EN -08EN -10EN -12EN SHV-08DN -10DN -12DN VRM IF (AV) IFSM TC (kV) (mA) * 2 3 3 10 12 2.0 14 16 20 24 6 8 10 12 2.0 8 10 12
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HVR-1X-40B
SHV-02
SHV-03S
SHV-03
SHV-06EN
-08EN
27min
HVR 1X 7
hvr-1x 7
UX-C2B
HVR-1X -7
HVR-1X microwave
SK HVR-1X
HVR-1X 9
HVR-1X SK
HVR-1X 6
HVR-1X-4
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Barrier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter 50Hz Half-cycle Sinewave Single Shot max per element IF （A） 5.0 20 0.9 2.5 1.0 14.0 50 0.9 7.0 3.0 180 −40 to ＋150 35 7.0 0.9 t /T＝1/3 3 t /T＝1/6
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GSC215/218
GSF18R
GSC318
GSC315
GSC218
GSC215
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HVR-1X 7 diode
Abstract: hvr 1X 7 diode HVR-1X diode HVR-1X 6 diode HVR 1X 7 HVR-1X HVR-1X 7 FMCG2 HVR-1X -7 hvr 1X 3 diode
Text: Selection Guide Rectifier Diodes Type No. SFPM-5 * SFPM-6 * AM01 * EM01 * EM 1 * EM 2 * RM 1 * RM 11 * RM 10 * RM 2 * RO 2 * RM 3 * RM 4 * RM 4 M * FMM-2 * FMM-3 * RBV-40 * RBV-40 M * RBV-40 H * RBV-60 * RBV-60 H * RBV-130 * RBV-150 * RBV-150 S * RBV-250 *
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RBV-40
RBV-40
RBV-60
RBV-60
RBV-130
RBV-150
RBV-150
RBV-250
RBA-40
HVR-1X 7 diode
hvr 1X 7 diode
HVR-1X diode
HVR-1X 6 diode
HVR 1X 7
HVR-1X
HVR-1X 7
FMCG2
HVR-1X -7
hvr 1X 3 diode
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HVR-1X 7 diode
Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Text: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10
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SFPM-54
SFPM-62
SFPM-64
SFPM-52
AM01Z
AM01A
EM01Z
EM01A
HVR-1X 7 diode
FMS-3FU
HVR-1X 6 diode
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
FMPG5F
rk36 diode
rk14 diode
HVR-1X 7
diode RU 3AM
HVR-1X diode
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HVR-1X 7 diode
Abstract: hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B
Text: CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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SFPB-66
SFPB-69
SFPB-72
SFPB-74
VR-60SS
SFPB-76
VR-61SS
HVR-1X 7 diode
hvr 1X 3 diode
HVR-1X 7
FMPG2F
HVR-1X diode
HVR-1X 6 diode
HVR-1X -7
HVR-1X 6
fmp2fu
RBA-404B
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Barrier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter max per element max per element IF (A) max per element 20 0.9 2.5 1.0 GSC315 150 180 GSF18R 180 (ns) dI F /dt= IF /IRP 100A /µs (mA) –40 to +150 0.9
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GSC215/218
GSF18R
GSC318
GSC315
GSC218
GSC215
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Untitled
Abstract: No abstract text available
Text: llilllffllllili m'-'X t?-»^>j3^'e~"^¥’^ V " ' vi Absolute Maximum Ratings X 'V\ N Parameter Type No. X . • If Vmn V I f <A V) (A) s V (A) (? ) SWat BattepfeSn *^ S & o it S f w i GSC215 150 G SC218 180 G SC315 150 G SF18R 180 (V) max per 6$emmt .
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GSC215
SC315
GSF18R
SF18R
SC318
SC218
UL94V-0
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GSC318
Abstract: gsc3 GSC218
Text: SERIES GS GaAs POWER SCHOTTKX DIODES Providing the ultimate in high-voltage, high-trequency rectification effeciency, gallium-arsenide Schottky diodes are a major improvement in rectifier technology. Gallium-arsenide Schottky diodes are essentially free of storage
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GSC215
GSC218
GSC235
GSC315
GSC318
gsc3
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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IR0A
Abstract: RY24
Text: 3SE T> E3 7 ^ 0 7 4 1 DD00SS3 T S A K J “P 0 3 - 0 1 SANKEN ELECTRIC CO LTD !RECTIFIER. DIODES BRIDGE TYPE qa=25°C) M a xim u m ra tin g s (V) RB-150 100 -152 200 -154 400 -156 600 800 600 R BA-401 100 -4 02 200 R B V -404 400 -4 0 6 600 -4 0 8 800
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DD00SS3
RB-150
LB-156
BA-401
-406M
-406H
RBV-601
RBV-1506
IR0A
RY24
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Untitled
Abstract: No abstract text available
Text: GaAs POWER SCH OTTKY DIODES Providing the ultimate in high-voltage, high-frequency rectification effeciency, gallium-arsenide Schottky diodes are a major improvement in rectifier technology. Gallium-arsenide Schottky diodes are essentially free of storage
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GSC215
GSC218
GSC235
GSC315
GSC318
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