Untitled
Abstract: No abstract text available
Text: GS8160E18/32/36BT-250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply
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GS8160E18/32/36BT-250/200/150
100-Pin
100-lead
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Untitled
Abstract: No abstract text available
Text: GS8160E18/32/36BT-250/200/150 100-Pin TQFP Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation
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GS8160E18/32/36BT-250/200/150
100-Pin
100-lead
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GS8160E18B
Abstract: GS8160E18BT-150 GS8160E18BT-200 GS8160E18BT-250 GS8160E32B GS8160E36B
Text: Preliminary GS8160E18/32/36BT-250/200/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation
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GS8160E18/32/36BT-250/200/150
100-Pin
100-lead
GS8160E18B
GS8160E18BT-150
GS8160E18BT-200
GS8160E18BT-250
GS8160E32B
GS8160E36B
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200IV
Abstract: GS8160E18BT-150V GS8160E18BT-200V GS8160E18BT-250V
Text: GS8160ExxBT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 1.8 V or 2.5 V core power supply
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GS8160ExxBT-xxxV
100-Pin
100-lead
GS8160ExxB-xxxV
200IV
GS8160E18BT-150V
GS8160E18BT-200V
GS8160E18BT-250V
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K7A803609B-PC25
Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15
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K6R1016V1C-FC10
K6R1016V1C-FC12
K6R1016V1C-FC15
K6R1016V1C-FC20
K6R1016V1C-JC10
K6R1016V1C-JC12
K6R1016V1C-JC15
K6R1016V1C-JC20
K6R1016V1C-TC10
K6R1016V1C-TC12
K7A803609B-PC25
K7A403600B-PC16
K7I161882B-EC16
K6R4016V1D-TC08
K7A403600M-QC16
K7I161882B-EC30
K6R4008V1C-JC12
K6R4016V1D-UC10
K6R1008V1C-JC10
K7R643682M-FC20
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IS61LF51232-8
Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML
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IS61DDB22M36-167M3
IS61DDB22M36-167M3L
IS61DDB22M36-167ML
IS61DDB22M36-200M
IS61DDB22M36-200M3
IS61DDB22M36-200M3L
IS61DDB22M36-200ML
IS61DDB22M36-250M
IS61DDB22M36-250M3
IS61DDB22M36-250M3L
IS61LF51232-8
IS61LV25616AL-8TL
IS61LF51232
IS61LV5128L-10T
GS71116AU-10E
167ML
IS61NLP25636A-200TQL
IS61QDB22M36
IS61LPS51236-150B
IS61LV5128L-12T
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GS8160E18B
Abstract: GS8160E18BT-150 GS8160E18BT-200 GS8160E18BT-250 GS8160E32B GS8160E36B GS8160E32BT-150 GS8160E32BGT150
Text: GS8160E18/32/36BT-250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply
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GS8160E18/32/36BT-250/200/150
100-Pin
100-lead
GS8160E18B
GS8160E18BT-150
GS8160E18BT-200
GS8160E18BT-250
GS8160E32B
GS8160E36B
GS8160E32BT-150
GS8160E32BGT150
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CY7C1338-100AXC
Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
Text: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12
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CY7C1019BV33-15VC
GS71108AJ-12
CY7C1019BV33-15VXC
GS71108AGJ-12
CY7C1019BV33-15ZC
GS71108ATP-12
CY7C1019BV33-15ZXC
GS71108AGP-12
CY7C1019CV33-10VC
GS71108AJ-10
CY7C1338-100AXC
gvt7164d32q-6
CY7C1049BV33-12VXC
CY7C1363C-133AC
CY7C1021DV33-12ZXC
CY7C1460AV25-200AXC
CY7C1338G-100AC
CY7C1041V33-12ZXC
CY7C1460V33-200AXC
CY7C1021DV33-10ZXC
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GS8160E18BT-150V
Abstract: GS8160E18BT-200V GS8160E18BT-250V
Text: Preliminary GS8160ExxBT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 1.8 V or 2.5 V core power supply
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GS8160ExxBT-xxxV
100-Pin
100-lead
GS81hnology
GS8160ExxB-xxxV
GS8160E18BT-150V
GS8160E18BT-200V
GS8160E18BT-250V
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GS8160E36BGT
Abstract: GS8160E32BGT
Text: Preliminary GS8160E18/32/36BT-300/250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation
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GS8160E18/32/36BT-300/250/200/150
100-Pin
100-lead
GS8160E36BGT
GS8160E32BGT
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Untitled
Abstract: No abstract text available
Text: GS8160ExxBT-xxxV 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode
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GS8160ExxBT-xxxV
100-lead
GS8160ExxB-xxxV
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Untitled
Abstract: No abstract text available
Text: GS8160E18/32/36BT-250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply
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GS8160E18/32/36BT-250/200/150
100-lead
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GS8160E36BGT-150
Abstract: GS8160E18B GS8160E18BT-150 GS8160E18BT-200 GS8160E18BT-250 GS8160E32B GS8160E36B
Text: GS8160E18/32/36BT-250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply
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Original
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GS8160E18/32/36BT-250/200/150
100-Pin
100-lead
GS8160E36BGT-150
GS8160E18B
GS8160E18BT-150
GS8160E18BT-200
GS8160E18BT-250
GS8160E32B
GS8160E36B
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GS8160E36BT-150
Abstract: GS8160E18B GS8160E18BT-150 GS8160E18BT-200 GS8160E18BT-250 GS8160E32B GS8160E36B
Text: GS8160E18/32/36BT-250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply
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GS8160E18/32/36BT-250/200/150
100-Pin
100-lead
GS8160E36BT-150
GS8160E18B
GS8160E18BT-150
GS8160E18BT-200
GS8160E18BT-250
GS8160E32B
GS8160E36B
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Untitled
Abstract: No abstract text available
Text: GS8160ExxBT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation
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Original
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GS8160ExxBT-xxxV
100-Pin
100-lead
100-lead
GS8160ExxB-xxxV
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