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D-68623 Abstract: No abstract text available Text: GS150TA25104 GS150TI25104 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25104 Triple Independent 250 250 GS150 TC25104 Triple Common cathode 250 250 GS150 TA25104 Triple Common anode	Original	PDF	GS150TA25104 GS150TI25104 GS150 TI25104 TC25104 TA25104 GS150TC25104 D-68623
GS150TA25110 Abstract: Directed Energy D-68623 TI25110 92000 Text: GS150TA25110 GS150TI25110 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25110 Triple Independent 250 250 GS150 TC25110 Triple Common cathode 250 250 GS150 TA25110 Triple Common anode	Original	PDF	GS150TA25110 GS150TI25110 GS150 TI25110 TC25110 TA25110 GS150TC25110 D-68623 GS150TA25110 Directed Energy TI25110 92000
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
"RF MOSFETs" Abstract: silicon carbide RF MOSFETs shottky diode 5a GS150T GaAs Schottky shottky 100V DE-150 power shottky diodes Schottky diode gaas Text: GaAs Schottky Diode Extremely Fast Recovery for RF & MHz Switching Applications January 2003 Description This new line of High Speed GaAs Schottky Diodes provide extremely fast recovery times, outperforming both Ultrafast and Silicon Carbide technologies. The recovery times	Original	PDF	DE-150 GS150TI25104 GS150TI25104 DE150 "RF MOSFETs" silicon carbide RF MOSFETs shottky diode 5a GS150T GaAs Schottky shottky 100V power shottky diodes Schottky diode gaas
PGA68 Abstract: clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight Text: CHEMICAL CONTENT OF SEMICONDUCTOR PACKAGING SEPTEMBER 1998 Corp. Environment Strategies Corp. Package Development USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE	Original	PDF	GS-150T 102x51x19 GS-100T GS-R1005 PGA68 clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight