DFT301-801
Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
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PC8179TK
PC8179TK
PC8179TB
HS350
WS260
IR260
PU10059EJ02V0DS
DFT301-801
DFT301
GRM40CH102J50PT
GRM39CH100D50PT
GRM39CH080D50PT
PC8128TB
GRM39CH050C50PT
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DFT301
Abstract: DFT301-801 grm40ch102j50pt PC8179TK-E2 7R102S50 GRM39CH100D50PT marking code 18 6pin GRM39CH080D50PT PC8178
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
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PC8179TK
PC8179TK
PC8179TB
IR260
WS260
HS350
PU10059EJ02V0DS
DFT301
DFT301-801
grm40ch102j50pt
PC8179TK-E2
7R102S50
GRM39CH100D50PT
marking code 18 6pin
GRM39CH080D50PT
PC8178
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GRM39B
Abstract: 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3 NEC K 2124
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2124TH L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for WCDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion.
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PG2124TH
PG2124TH
GRM39B
10-PIN
GRM39CH
TFL0816-2N7
TFL0816-3N3
NEC K 2124
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GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
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GRM39CK
Abstract: DFT301 7R102S50 GRM39CH100D50PT
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC8179TK
PC8179TB
PU10059JJ02V0DS
IR260
WS260
HS350
GRM39CK
DFT301
7R102S50
GRM39CH100D50PT
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GRM39CK
Abstract: GRM39B 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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GRM42-6CH
Abstract: GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM40C0G103J50
GRM1882C1H8R0DZ01
GRM188F11E104Z
GRM39F104Z
GRM39X7R473K25
GRM1885C1H391JA01J
GRM39U2J100D
GRM40X7R104K25
GRM40B106K
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DFT301
Abstract: 7R102S50 uPC8179tk
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
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PC8179TK
PC8179TK
PC8179TB
DFT301
7R102S50
uPC8179tk
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marking g2p
Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2130TB
PG2130TB
marking g2p
diode gp 429
TFL0816-3N3
TFL0816-6N8
TFL0816-8N2
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grm39ck1r5c50
Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2126TB
PG2126TB
grm39ck1r5c50
TFL0816-12N
TFL0816-2N2
TFL0816-8N2
GRM39CH101J50
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GRM39CH
Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TFL0816-10N
Abstract: VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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GRM39CK
Abstract: C10535E GRM39CH VP15-00-3 G2C marking
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2115TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2115TB is a GaAs MMIC for PA driver amplifiers developed for L-band mobile communication applications. This device realizes low voltage operation with low current and low distortion characteristics. Moreover, the
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PG2115TB
PG2115TB
GRM39CK
C10535E
GRM39CH
VP15-00-3
G2C marking
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DFT301
Abstract: DFT301-801 ic isl 887 nec 2405 marking 63219
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2115TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2115TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
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PG2115TB
PG2115TB
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TFL08
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2126TB
PG2126TB
TFL08
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TFL0816-2N2
Abstract: TFL0816-12N TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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GRM40CH102J50
Abstract: UPC8178TK-E2-A UPC8178T marking 63219
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
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PC8178TK
PC8178TK
PC8178TB
GRM40CH102J50
UPC8178TK-E2-A
UPC8178T
marking 63219
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2128TB
PG2128TB
TFL0816-2N7
TFL0816-6N8
TFL0816-8N2
marking g2m
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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GRM39CH100D50PT
Abstract: UPC8178TK-E2-A DFT301-801 DFT301 GRM40CH
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC8178TK
PC8178TB
PU10063JJ02V0DS
IR260
WS260
HS350
GRM39CH100D50PT
UPC8178TK-E2-A
DFT301-801
DFT301
GRM40CH
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nec 2405
Abstract: UPC8178TK-E2-A DFT301 marking 63219 DFT301-801
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
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PC8178TK
PC8178TK
PC8178TB
nec 2405
UPC8178TK-E2-A
DFT301
marking 63219
DFT301-801
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