TFL0816-15N
Abstract: UPG2301TQ 10-PIN PG2301TQ GRM39CH grm39 GRM39CH102J50
Text: DATA SHEET NEC's POWER AMPLIFIER FOR BLUETOOTH CLASS 1 UPG2301TQ FEATURES DESCRIPTION • OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz 2 450 MHz TYP. NEC's µPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. • SUPPLY VOLTAGE VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)
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UPG2301TQ
PG2301TQ
10-pin
PG2301TQ
TFL0816-15N
UPG2301TQ
GRM39CH
grm39
GRM39CH102J50
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GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
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GRM42-6CH
Abstract: GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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Original
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM40C0G103J50
GRM1882C1H8R0DZ01
GRM188F11E104Z
GRM39F104Z
GRM39X7R473K25
GRM1885C1H391JA01J
GRM39U2J100D
GRM40X7R104K25
GRM40B106K
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marking g2p
Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2130TB
PG2130TB
marking g2p
diode gp 429
TFL0816-3N3
TFL0816-6N8
TFL0816-8N2
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GRM39CH
Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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VP215
Abstract: 10-PIN TFL0816-15N
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301TQ POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301TQ is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
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PG2301TQ
PG2301TQ
10-pin
VP215
TFL0816-15N
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GRM39CH
Abstract: Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2132TQ L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2132TQ is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2132TQ
PG2132TQ
10-pin
GRM39CH
Susumu Marking
TFL0816-3N9
diode gp 429
TFL0816-12N
TFL0816-22N
TFL0816-27N
TFL0816-33N
TFL0816-5N6
TFL0816-6N8
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10-PIN
Abstract: TFL0816-15N UPG2301TQ PG2301TQ-E1
Text: DATA SHEET NEC's POWER AMPLIFIER FOR BLUETOOTH CLASS 1 UPG2301TQ FEATURES DESCRIPTION • OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz 2 450 MHz TYP. NEC's PG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. • SUPPLY VOLTAGE VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)
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UPG2301TQ
PG2301TQ
10-pin
TFL0816-15N
UPG2301TQ
PG2301TQ-E1
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2128TB
PG2128TB
TFL0816-2N7
TFL0816-6N8
TFL0816-8N2
marking g2m
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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