GRM31MF51A106ZA01B Search Results

GRM31MF51A106ZA01B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GRM31MF51A106ZA01B		muRata	Chip Monolithic Ceramic Capacitor		Original	PDF

GRM31MF51A106ZA01B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MCR50V107M8X11 Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA
NIPPON CAPACITORS Abstract: 1825 - 0148 Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9200LR3 MRF9200LSR3 NIPPON CAPACITORS 1825 - 0148
TD-SCDMA Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 TD-SCDMA A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3
GRM42-6CH Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage	Original	PDF	GHM1030R101K1K GHM1030R101K630 GHM1030R102K630 GHM1030R151K1K GHM1030R151K630 GHM1030R221K1K GHM1030R221K630 GHM1030R331K1K GHM1030R331K630 GHM1030R470K1K GRM42-6CH GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
NIPPON CAPACITORS Abstract: capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L MRF9200LR3 Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3 NIPPON CAPACITORS capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3
NIPPON CAPACITORS Abstract: 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LR3 MRF9200LSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9200L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9200LR3 MRF9200LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	PDF	MRF9200L/D MRF9200LR3 MRF9200LSR3 228Affirmative MRF9200LR3 NIPPON CAPACITORS 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LSR3
GRM42-6CH Abstract: GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage	Original	PDF	GHM1030R101K1K GHM1030R101K630 GHM1030R102K630 GHM1030R151K1K GHM1030R151K630 GHM1030R221K1K GHM1030R221K630 GHM1030R331K1K GHM1030R331K630 GHM1030R470K1K GRM42-6CH GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K
567 tone Abstract: NIPPON CAPACITORS MARKING 2299 mos 2508051107Y0 Vishay Dale 200 ohm .1 W resistors 465B A114 AN1955 JESD22 MRF9200L Text: Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9200L MRF9200LR3 MRF9200LSR3 IS-95 MRF9200LR3 567 tone NIPPON CAPACITORS MARKING 2299 mos 2508051107Y0 Vishay Dale 200 ohm .1 W resistors 465B A114 AN1955 JESD22 MRF9200L
NIPPON CAPACITORS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 2, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200L NIPPON CAPACITORS
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3
GRM31MF51A106ZA01B Abstract: d5048 Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 GRM31MF51A106ZA01B d5048
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3