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Murata Manufacturing Co Ltd GRM31CR61H106KA12L CAP CER 10UF 50V X5R 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GRM31CR61H106KA12L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	GRM31CR61H106KA12L	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	GRM31CR61H106KA12L	Digi-Reel			1	1 $0.55 10 $0.55 100 $0.55 1000 $0.55 10000 $0.55	Buy Now
Bristol Electronics	GRM31CR61H106KA12L		10,875			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	GRM31CR61H106KA12L		435		7	1 - 10 $0.75 100 $0.375 1000 $0.225 10000 $0.225	Buy Now
Quest Components	GRM31CR61H106KA12L		6,400			1 $0.64 10 $0.64 100 $0.64 1000 $0.256 10000 $0.224	Buy Now
	GRM31CR61H106KA12L		3,252			1 $0.45 10 $0.45 100 $0.45 1000 $0.1875 10000 $0.1875	Buy Now
	GRM31CR61H106KA12L		1,084			1 $0.7 10 $0.7 100 $0.7 1000 $0.28 10000 $0.28	Buy Now
	GRM31CR61H106KA12L		540			1 $0.75 10 $0.75 100 $0.75 1000 $0.3 10000 $0.3	Buy Now
	GRM31CR61H106KA12L		348			1 $1 10 $1 100 $0.3 1000 $0.2 10000 $0.2	Buy Now
TTI	GRM31CR61H106KA12L	Reel	36,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.097	Buy Now
TME	GRM31CR61H106KA12L		96,263		1	1 $0.376 10 $0.185 100 $0.095 1000 $0.073 10000 $0.064	Buy Now

GLYN GmbH & Co. KG	GRM31CR61H106KA12L		94,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NexGen Digital	GRM31CR61H106KA12L		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	GRM31CR61H106KA12L		588,710			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	GRM31CR61H106KA12L		20,800			1 - 10 - 100 - 1000 $0.0579 10000 $0.0386	Buy Now
Murata Manufacturing Co Ltd GRM31CR61H106MA12L CAP CER 10UF 50V X5R 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GRM31CR61H106MA12L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	GRM31CR61H106MA12L	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	GRM31CR61H106MA12L	Digi-Reel			1	1 $0.32 10 $0.32 100 $0.32 1000 $0.32 10000 $0.32	Buy Now
Bristol Electronics	GRM31CR61H106MA12L		4,558			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Murata Manufacturing Co Ltd GRM31CR61H106KA12K CAP CER 10UF 50V X5R 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GRM31CR61H106KA12K	Digi-Reel			1	1 $0.55 10 $0.55 100 $0.55 1000 $0.55 10000 $0.55	Buy Now
	GRM31CR61H106KA12K	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	GRM31CR61H106KA12K	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

GRM31CR61H106 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
GRM31CR61H106KA12K	Murata Electronics North America	Capacitors - Ceramic Capacitors - CAP CER 10UF 50V X5R 1206	Original	PDF
GRM31CR61H106KA12L	muRata	Ceramic Capacitors, Capacitors, CAP CER 10UF 50V 10% X5R 1206	Original	PDF
GRM31CR61H106MA12L	Murata Electronics North America	Capacitors - Ceramic Capacitors - CAP CER 10UF 50V X5R 1206	Original	PDF

GRM31CR61H106 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GRM31CR61H106KA12 Abstract: GRM31CR61H106 cap 2220 10uf sh 604 Text: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data Murata Global Part No Size inch/mm Temp. Chara. Cap.Value Cap.Tol. Volt. GRM31CR61H106KA12 1206/3216 X5R 10uF +/-10% 50V 1. Dimension 3. Impedance/ESR - Frequency Equipment: HP4294A(16044A)	Original	GRM31CR61H106KA12 HP4294A 6044A) HP4284A 180mm LLL15) 330mm GRM31CR61H106KA12 GRM31CR61H106 cap 2220 10uf sh 604	PDF
Untitled Abstract: No abstract text available Text: User's Guide SBOU121 – June 2012 INA827EVM This user's guide describes the characteristics, operation, and use of the evaluation module EVM for the INA827. The EVM is designed to evaluate the performance of the device in both single- and dual-supply configurations. This document also includes the schematic, printed circuit board (PCB) layouts, and a	Original	SBOU121 INA827EVM INA827. INA827EVM.	PDF
transistor j241 Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448 Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
ATC600F241JT250XT Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of	Original	AFT09MS031N O-270-2 AFT09MS031NR1 AFT09MS031NR1 AFT09MS031GNR1 13ogo, 8/2012Semiconductor, ATC600F241JT250XT GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT inductor 50 NH GRM31CR61H106KA12	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S240--12S AFT21S240-12SR3	PDF
GRM0222C1C330GD05 Abstract: No abstract text available Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.	Original	GRM55DR72E334KW01# GRM55DR72E474KW01# GRM55DR72E684KW01# GRM55DR72E105KW01# GRM55DR72D334KW01# GRM55DR72D474KW01# GRM55DR72D684KW01# 200Vdc 250Vdc GRM55DR72D105KW01# GRM0222C1C330GD05	PDF
MURATA GRM Abstract: GRM31CR71E106KA12L GRM31 Murata GRM32ER61C476M GRM31CR61H106K GRM32ER71E226M grm32er71a476m MURATA GRM31 4.7uF 0603 X7R GRM18 Murata X7R Text: CHIP MONOLITHIC CERAMIC CAPACITOR GRM series / Hi-Cap 1uF and over Features 1. TA chip capacitor replacement product lineup is available in X7R (X7S, X7T, X7U), X6S(X6T) and X5R temperature characteristics with a capacitance of 1uF and larger. 2. The line of high volumetric capacitance ceramic chip capacitors is available in 2.5V,4V, 6.3V, 10V, 16V,	Original	FM7500U-092-MAY09 MURATA GRM GRM31CR71E106KA12L GRM31 Murata GRM32ER61C476M GRM31CR61H106K GRM32ER71E226M grm32er71a476m MURATA GRM31 4.7uF 0603 X7R GRM18 Murata X7R	PDF
J221 Abstract: CW12010T0050G Text: Freescale Semiconductor Technical Data Document Number: A2I25D012N Rev. 0, 9/2014 RF LDMOS Wideband Integrated Power Amplifiers The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz. This	Original	A2I25D012N A2I25D012N A2I25D012NR1 A2I25D012GNR1 J221 CW12010T0050G	PDF
A9M15 Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	MMRF1021N MMRF1021NT1	PDF
A5M06 Abstract: Transistor Z17 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17	PDF
Untitled Abstract: No abstract text available Text: SC2308A 600kHz Step-Up Switching Regulator with 2.2A, 45V Switch POWER MANAGEMENT Features             Description Input Voltage Range: 2.6V to 20V Boost and SEPIC Topologies Up to 40V Output in Boost Topology Integrated 2.2A/45V Switch	Original	SC2308A 600kHz A/45V SC2308A	PDF

ATC600F470BT250XT Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor	PDF
NI-880XS-2 Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.	Original	AFT18S290-13S AFT18S290-13SR3 20luding NI-880XS-2 J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S AFT18S290 ATC100B0R4BT500XT nichicon HD	PDF
GRM21BR61E106KA73L Abstract: GRM21BR61E226M GRM32ER7YA106KA12L GRM, MURATA GRM32ER61C476KE15L GRM32ER71H106 GRM188R61E106MA73L GRM31CR61E226KE15L GRM319R61A226ME15D GRM188C80E106ME47D Text: CHIP MONOLITHIC CERAMIC CAPACITOR GRM series / Hi-Cap 1uF and over Features 1. TA chip capacitor replacement product lineup is available in X7R (X7S, X7T, X7U), X6S(X6T) and X5R temperature characteristics with a capacitance of 1uF and larger. 2. The line of high volumetric capacitance ceramic chip capacitors is available in 2.5V,4V, 6.3V, 10V, 16V,	Original	-10Operating FM7500U-092-Oct FM7500U-092-Sep Hi-Cap2010 GRM21BR61E106KA73L GRM21BR61E226M GRM32ER7YA106KA12L GRM, MURATA GRM32ER61C476KE15L GRM32ER71H106 GRM188R61E106MA73L GRM31CR61E226KE15L GRM319R61A226ME15D GRM188C80E106ME47D	PDF
AFT504 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS004N AFT05MS004NT1 AFT504	PDF
Z6 3pin Abstract: J262 AFT09MS007NT1 Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1	PDF
ATC600F241JT Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12	PDF
SEMTECH cross Abstract: No abstract text available Text: SC2308A 600kHz Step-Up Switching Regulator with 2.2A, 45V Switch POWER MANAGEMENT Features             Description Input Voltage Range: 2.6V to 20V Boost and SEPIC Topologies Up to 40V Output in Boost Topology Integrated 2.2A/45V Switch	Original	SC2308A 600kHz SC2308A SEMTECH cross	PDF
transistor j241 Abstract: j241 J241 transistor Text: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to	Original	A2T07H310--24S A2T07H310-24SR6 transistor j241 j241 J241 transistor	PDF
81A7031-50-5F Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F	PDF
GRM21bc81c106 Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.	Original	20eristics ISO14001 C02E-18 GRM21bc81c106 GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE	PDF

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GRM31CR61H106 Price and Stock

Murata Manufacturing Co Ltd GRM31CR61H106KA12L

Murata Manufacturing Co Ltd GRM31CR61H106MA12L

Murata Manufacturing Co Ltd GRM31CR61H106KA12K

GRM31CR61H106 Datasheets (3)

GRM31CR61H106 Datasheets Context Search

GRM31CR61H106KA12

Untitled

transistor j241

Untitled

ATC600F241JT250XT

Untitled

Untitled

GRM0222C1C330GD05

MURATA GRM

J221

A9M15

Untitled

A5M06

Untitled

ATC600F470BT250XT

NI-880XS-2

GRM21BR61E106KA73L

AFT504

Z6 3pin

ATC600F241JT

SEMTECH cross

transistor j241

81A7031-50-5F

GRM21bc81c106