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    NH245

    Abstract: GQ304 TRANSISTOR L 287 A
    Text: 3DE D • S G S -T H O M S O N G W IIS IIL I^ IM D O S 7^2^237 DD3DMSÜ T ES M 7 5 4 5 DF ES M 7 5 4 5 DV S G S - THOMSON NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE


    OCR Scan     		PDF O-240) PC-029« NH245 GQ304 TRANSISTOR L 287 A

    Untitled

    Abstract: No abstract text available
    Text: K M 4 16 C 2 5 4 D J CMOS D R A M ELECTRONICS 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 256Kx16 ba54DJ QQ304SS 40SOJ KM416C254DJ

    ESM2012DV

    Abstract: No abstract text available
    Text: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE


    OCR Scan     		PDF ESM2012DF ESM2012DV ESM2012DV ESM2012DF T-91-20 O-240) PC-029«