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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GP21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


    OCR Scan     		PDF P21N60E/D GP21N60E 21A-06 O-220AB

    p21n6

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF P21N60E/D p21n6