Untitled
Abstract: No abstract text available
Text: Ordering number : EN8936A SMA3117 MMIC Amplifiler, 5V, 22.7mA, 0.1 to 3GHz, MCPH6 http://onsemi.com Features • • • • • • High Gain : Gp=33.5dB typ. @2.2GHz Wideband response : fu=3.0GHz Low current : ICC=22.7mA typ. High output power : Po 1dB =5.7dBm
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EN8936A
SMA3117
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25C6
Abstract: GDI-30F J600 KT19 kt 605 600AGP20
Text: Double Row Terminal Blocks KulkaGOOAGP Series 300 Volts Specifications: Base, Phenolic, 150°C 3/8" Centers JJ GDI-30F Material is Available Wire Range with Wire Binding Open Back Design Screw #12-#22 Awg -15 Amps Screws, #6-32 Binder Head, Phil-Slot UL Recognized File No. E47811
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GDI-30F)
E47811
LR19766
600AGP
25C6
GDI-30F
J600
KT19
kt 605
600AGP20
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.
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RD10MMS2
870MHz
RD10MMS2
12Wtyp,
870MHz
800MHz-band
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8240T6N
PC8240T6N
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RA45H4452M
Abstract: RA45H4452M-101 transistor marking zg
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA45H4452M
440-520MHz
RA45H4452M
45-watt
520-MHz
RA45H4452M-101
transistor marking zg
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Fl13324A1
Abstract: ECKAVS472ME Y2 250V X1 440V iec 60384-14 Y1 CAP 470pF iec60384-14 Type NS ceramic cap E62674 EN132 400 Y1 250V X1 440V
Text: Ceramic Disc Capacitors Safety Regulations Ceramic Disc Capacitors (Safety Regulations) Type NS-A IEC60384-14 Sub-class Y1/X1 Type TS IEC60384-14 Sub-class Y2/X1 Type VS IEC60384-14 Sub-class Y2/X1 Smaller size Type BE 250 VAC Electrical Appliance and Material
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IEC60384-14
3300pF
2200pF
1000pF
4700pF
10000pF
Fl13324A1
ECKAVS472ME
Y2 250V X1 440V
iec 60384-14
Y1 CAP 470pF
Type NS ceramic cap
E62674
EN132 400
Y1 250V X1 440V
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LT 7210
Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA60H4452M1
440-520MHz
RA60H4452M1
60-watt
520-MHz
LT 7210
lt 7210 datasheet
440M
470M
RA60H4452M1-101
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RA07N4047M-101
Abstract: RA07N4047M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to
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RA07N4047M
400-470MHz
RA07N4047M
470-MHz
RA07N4047M-101
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MOSFET Module
Abstract: RA30H2127M RA30H2127M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H2127M RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 210- to
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RA30H2127M
210-270MHz
RA30H2127M
30-watt
270-MHz
MOSFET Module
RA30H2127M-101
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RA07M3843
Abstract: RA07M3843M RA07M3843M-101 4 channel rf module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to
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RA07M3843M
378-430MHz
RA07M3843M
430-MHz
RA07M3843
RA07M3843M-101
4 channel rf module
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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TR6143
Abstract: advantest TR6143 HP346C FDK gps antenna GRM1554C WK72475 HP8562A HP483A PC8211TK diagram tr6143
Text: Technical Note APPLICATION FOR 1.575 GHz GPS WITH µPC8211TK, µPC8215TU, AND µPC8226TK Reference Design of Evaluation Board for 1.575 GHz LNA Document No. PU10570EJ01V0TN 1st edition Date Published July 2005 CP(K) NEC Compound Semiconductor Devices, Ltd. 2005
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PC8211TK,
PC8215TU,
PC8226TK
PU10570EJ01V0TN
TR6143
advantest TR6143
HP346C
FDK gps antenna
GRM1554C
WK72475
HP8562A
HP483A
PC8211TK
diagram tr6143
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RFM08U9X
Abstract: No abstract text available
Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These
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RFM08U9X
RFM08U9X
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128-PIN
Abstract: X98024
Text: X98024 NS ESIG LE D EW TI B O R N C O M PA F D E E ND 100% IVE Sheet OMM 240 IS A ERNATData C E R T 1 L NOT SL9800 VED A I O T HE I M PR March 8, 2006 240MHz Triple Video Digitizer with Digital PLL FN8220.3 Features • 240MSPS maximum conversion rate The X98024 3-channel, 8-bit Analog Front End AFE
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X98024
240MHz
FN8220
240MSPS
X98024
128-PIN
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128-PIN
Abstract: X98021
Text: X98021 NS ESIG LE D EW TI B O R N C O M PA F D E E ND 100% IVE Sheet OMM 210 IS A ERNATData C E R T 1 L NOT SL9800 VED A I O T HE I M PR March 8, 2006 210MHz Triple Video Digitizer with Digital PLL FN8219.3 Features • 210MSPS maximum conversion rate The X98021 3-channel, 8-bit Analog Front End AFE
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X98021
210MHz
FN8219
210MSPS
X98021
128-PIN
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XPOSYS
Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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BFP640ESD
OT343
OT343-PO
OT343-FP
BFP640ESD:
OT323-TP
726-BFP640ESDE6327
640ESD
E6327
XPOSYS
gummel poon model parameter HBT
X-GOLD
colossus
diodes transistor marking k2 dual
Trimble
Germanium Transistor
agilent ads
SENSONOR
2.4ghz lnb
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MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
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Untitled
Abstract: No abstract text available
Text: ADA-4789 Silicon Bipolar Darlington Amplifier Data Sheet Description Features Avago Technologies’ ADA-4789 is an economical, easyto-use, general purpose silicon bipolar RFIC gain block amplifiers housed in SOT-89 surface mount plastic package. • • •
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ADA-4789
ADA-4789
OT-89
AV01-0295EN
AV02-0052EN
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SMD IC MARKING GP
Abstract: 2SC2404
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SC2404
OT-23
SMD IC MARKING GP
2SC2404
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1 HP25
Abstract: ABA-51563 agilent RF Marking 07 ABA-51563-BLK ABA-51563-TR1 ABA-51563-TR2 aba 6
Text: Agilent ABA-51563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Features • Operating frequency: DC ~ 3.5 GHz • 21.5 dB gain • VSWR < 2.0 throughout operating frequency • 1.8 dBm output P1dB Description Agilent’s ABA-51563 is an economical, easy-to-use, internally 50-ohm matched silicon
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ABA-51563
ABA-51563
50-ohm
OT-363
OT-143
5988-8956EN
5988-9178EN
1 HP25
agilent RF Marking 07
ABA-51563-BLK
ABA-51563-TR1
ABA-51563-TR2
aba 6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document order number: MC07XS6517 Rev. 1.0, 6/2013 Triple 7.0 mOhm and Dual 17 mOhm High Side Switch 07XS6517 The 07XS6517 is the latest achievement in automotive lighting drivers. It belongs to an expanding family to control and diagnose incandescent
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MC07XS6517
07XS6517
07XS6517
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR G A H O U S IN G MATERIAL: COLOR: NATURAL. A CONTACT MATERIAL: A D A LIQUID CRYSTAL PHO SPH O R
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OCR Scan
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090CT97
250CT97
250CT97
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5FW J2C48M ,U 5FW J2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2C48M, U5FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage : V r r m = 30V • Average Output Rectified Current
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J2C48M
5FWJ2C48M,
U5FWJ2C48M
5FWJ2C48M
12-10D1A
12-10D2A
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