NP-FM50
Abstract: NP-F330 gp digital camera universal li-ion charger SAA 7000 Casio np20 olympus 765 BP511 f601 canon ccd panasonic rx c50
Text: PRODUKTINFO Universalladdare digitalkamerabatterier Nyhet våren 2005! GP Digital Camera Universal Lithium Ion laddare är framtagen för 3,6V och 7,2V Lithium Ion batterier för digitalkameror från Canon, Casio, Fuji, GP, Kodak, Konica, Kyocera, Minolta, Nikon,
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600mAh
1000mAh
1400mAh
1800mAh
NV-GS10EGR/NV-GS10EGS/NV-GS30/NV-GS30B/
-GS40/NV-GS40B/NV-GS50/NV-GS50B/NV-GS50K/
-GS55/NV-GS55K/NV-GS70/NV-GS70B/NV-GS70K/
-GS120/PV-GS200/PV-GS33/PV-GS50/PV-GS50S/
PV-GS55/PV-GS70/VDR-M30/VDR-M30K/VDR-M50/
VDR-M70
NP-FM50
NP-F330
gp digital camera universal li-ion charger
SAA 7000
Casio np20
olympus 765
BP511
f601
canon ccd
panasonic rx c50
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Power Triode 6BK4
Abstract: Triode ed500 6BK4 SK509 Svetlana 30kv cap ED500
Text: SVETLANA TECHNICAL DATA GP-5 Beam Triode T he SvetlanaTM GP-5 is a glass-envelope beam power triode intended for use as a shunt regulator or pulse modulator in high-voltage systems. It features anode operating voltage of 30 kV and a plate dissipation of 37.5 watts. Originally intended for
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ED500
Power Triode 6BK4
Triode ed500
6BK4
SK509
Svetlana
30kv cap
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MS2210
Abstract: mismatch load J22 transistor
Text: MS2210 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 300W MINIMUM Gp = 7.0 dB LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING 15:1 VSWR CAPABILITY DESCRIPTION:
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MS2210
MS2210
mismatch load
J22 transistor
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DSDC0561
Abstract: L200CIR941
Text: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: http://www.ledtronics.com L200CIR941 Infrared 5mm, Flanged Cylindrical, 8.6mm Height 20° viewing angle DWG BY: BL / GP
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L200CIR941
DSDC0561
DSDC0561
L200CIR941
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DSDC0523
Abstract: L200CWIR881 "infrared led" 800 nm 980 nm
Text: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: http://www.ledtronics.com L200CWIR881 Infrared 5mm, Flanged Cylindrical, 8.6mm Height 20° viewing angle DWG BY: LL / GP
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L200CWIR881
DSDC0523
DSDC0523
L200CWIR881
"infrared led" 800 nm 980 nm
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hvo32
Abstract: HVO16 M56693
Text: MITSUBISHI <CONTROL / DRIVER IC> M56693FP/GP Bi-CMOS & DMOS 32BIT SERIAL-INPUT LATCHED DRIVER DESCRIPTION The M56693 is a semiconductor integrated circuit that has a built- PIN CONFIGURATION TOP VIEW in, 32-bit shift register and a latch of CMOS structure with serial
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M56693FP/GP
32BIT
M56693
32-bit
HVO12
HVO13
HVO14
HVO15
HVO16
HVO17
hvo32
HVO16
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AND113G
Abstract: AND113GP
Text: AND113G/GP Standard LED Standard Bright LED LAMPS Weight: 0:30 g Unit: mm Product specifications contained herein may be changed without prior notice. It is therefore advisable to contact Purdy Electronics before proceeding with the design of equipment incorporating this product.
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AND113G/GP
AND113G
AND113G/GP
AND113GP
AND113G
AND113GP
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HVO16
Abstract: hvo32
Text: MITSUBISHI <CONTROL / DRIVER IC> M56694FP/GP Bi-CMOS & DMOS 32BIT SERIAL-INPUT LATCHED DRIVER DESCRIPTION The M56694 is a semiconductor integrated circuit that has a built- PIN CONFIGURATION TOP VIEW in, 32-bit shift register and a latch of CMOS structure with serial
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M56694FP/GP
32BIT
M56694
32-bit
HVO22
HVO21
HVO20
HVO19
HVO18
HVO16
hvo32
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Untitled
Abstract: No abstract text available
Text: AND113G/GP Standard LED Standard Bright LED LAMPS Weight: 0:30 g Unit: mm Product specifications contained herein may be changed without prior notice. It is therefore advisable to contact Purdy Electronics before proceeding with the design of equipment incorporating this product.
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AND113G/GP
AND113G
AND113G/GP
AND113GP
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TRANSISTOR D 1765
Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
Oct2011
TRANSISTOR D 1765
transistor mosfet 4425
1776
48T08
TRANSISTOR D 1765 720
T72 MARKING
1788
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AND114G
Abstract: AND114GP
Text: AND114G/GP Standard Bright LED LAMPS Weight: 0:30 g Unit: mm ø5.8 ± 0.2 AND114G Product specifications contained herein may be changed without prior notice. It is therefore advisable to contact Purdy Electronics before proceeding with the design of equipment incorporating this product.
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AND114G/GP
AND114G
AND114GP
AND114G
AND114GP
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Untitled
Abstract: No abstract text available
Text: AND114G/GP Standard Bright LED LAMPS Weight: 0:30 g Unit: mm ø5.8 ± 0.2 AND114G Product specifications contained herein may be changed without prior notice. It is therefore advisable to contact Purdy Electronics before proceeding with the design of equipment incorporating this product.
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AND114G/GP
AND114G
AND114GP
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B41303-A3109-M
Abstract: B43303-D227-M b933 h337 B5159
Text: Snap-In Capacitors 85 °C B 41 303 B 43 303 GP grade For universal application Construction ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface
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F/400
B41303-A3109-M
B43303-D227-M
b933
h337
B5159
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AND114G
Abstract: AND114GP
Text: AND114G/GP Standard Bright LED LAMPS Weight: 0:30 g Unit: mm ø5.8 ± 0.2 AND114G Standard LED T-1 3/4 Package 5 mm 12.75 ±0.5 Features • Low power requirement • Flush-mount • All plastic molded lens • Color: GaP–Green (1) 7.6 2.5 max including resin
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AND114G/GP
AND114G
AND114GP
AND114G
AND114GP
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R1401
Abstract: FR4 dielectric constant 4.6 THN5601B 1695 GP 1 JS 0746 gp 738
Text: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration
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THN5601B
OT-223
THN5601
R1401
FR4 dielectric constant 4.6
THN5601B
1695 GP 1
JS 0746
gp 738
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R1401
Abstract: THN5601B
Text: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration
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THN5601B
OT-223
THN5601
R1401
THN5601B
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dys-8
Abstract: DTS 122 l 9 d787 SMT SIDE TACT SWITCH dts circuit board DTS5SD 700 SERIES AUGAT DTS-4SD dpst switching time 10PST
Text: AUGAT/ INTCON PRÎT 1015335 4 CÎE Î GP 0001555 IAUIP DTS/DYS SERIES Low Profile Dip Switch SPECIFICATIONS Contacts:. gold flash over nickel Contact R atin g :. non-switching: 100 MA at 50 VDC
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TP200
XR110,
XR210,
dys-8
DTS 122 l 9
d787
SMT SIDE TACT SWITCH
dts circuit board
DTS5SD
700 SERIES AUGAT
DTS-4SD
dpst switching time
10PST
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F 711
Abstract: TOSHIBA RF Power Module
Text: RF POWER AMPLIFIER MODULE S-AU9 900MHz UHF POWER AMPLIFIER MODULE Unit in mm MCA FEATURES : 2-R2.1±CL2 . Output Power : P0 SS14W . Minimum Gain : Gp=18.4dB . Efficiency : M a 7^' S3 5% û5±ai5 . 50 0 Input/Output Impedance Uâ^ . Guaranteed Stability 25.4
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900MHz
SS14W
200mW,
1500pF,
10/iF
F 711
TOSHIBA RF Power Module
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR DESCRIPTION A MOLDED PARTS: COLOR BLACK. GLASS DATE NYLON, UL94V-0 APVD ZMR EDB 3 /J A N /0 7
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ECO-06-028339
3/JAN/07
UL94V-0
31MAR2000
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI cCONTROL/ DRIVER IC> M56694FP/GP Bi-CMOS & DMOS 32BIT SERIAL-INPUT LATCHED DRIVER DESCRIPTION The M 56694 is a sem iconductor integrated circuit that has a built- PIN CONFIGURATION TOP VIEW in, 32-bit shift register and a latch of CM OS structure with serial
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M56694FP/GP
32BIT
32-bit
HVO23
HVO10
HVO24
HVO25
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Untitled
Abstract: No abstract text available
Text: AUGAT/ INTCON PRDT GP 4TE ]> • 10^5333 OOOlöll 7GT ■ AUIP THE GEMINI SERIES "AE" Series Washable Rockers_ SPECIFICATIONS Terminal Seal: Epoxy standard . Operating Temperature: -30°C to +85°C. Storage Temperature: -45°C to +100°C. Process Sealing: Seals will withstand wave soldering and
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Untitled
Abstract: No abstract text available
Text: AUGAT/ INTCON PRDT GP 4TE D • Q 10^3335 0D01ÖQ1 flbO ■ AUIP THE GEMINI SERIES "A" Series Miniature Rockers SPECIFICATIONS UL Available upon request please consult factory. ELECTRICAL LIFE: 60,000 operations For -Olfunction only . All other 30,000. CONTACT RATING: Silver, 5A @ 125 VAC; Gold, 0.4VA @ 20 VDC max.
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Untitled
Abstract: No abstract text available
Text: AUGAT/ INTCON PRÎT GP 4ÌE D & 10^3335 00017cib b?3 M A U I P THE GEMINI SERIES "A" Series Miniature Toggles SPECIFICATIONS UL Available upon request please consult factory. Contact Rating: Silver, 5 A @ 125 VAC; Gold, 0.4VA @ 20 VDC max. Contact Resistance: 30 milliohms maximum initial.
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00017c
125VAC,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI «CO N TRO L / DRIVER IC> M56693FP/GP Bi-CM O S & DM OS 32BIT SERIAL-INPUT LATCHED DRIVER DESCRIPTION The M56693 is a semiconductor integrated circuit that has a built- PIN CONFIGURATION TOP VIEW in, 32-bit shift register and a latch of C M O S structure with serial
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M56693FP/GP
32BIT
M56693
32-bit
100Hz
70x70x1
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