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    GM76C8128SL Search Results

    GM76C8128SL Datasheets Context Search

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    fe 1.1s

    Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
    Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low


    Original     		PDF GM76C256B 55/70/E GM76C256BL/BLL 450mil) 55/70/85ns CS250 fe 1.1s GM76C512 a 683 transister GM76 GM76C5 cs25-02

    battery c-s2

    Abstract: 76C8128 566 function
    Text: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum


    OCR Scan     		PDF GM76C8128BSL GM76C8128SL 55/70/85ns. 76C8128BSL 32-pin 600mil) 525mil) 28BSL battery c-s2 76C8128 566 function