Untitled
Abstract: No abstract text available
Text: GM23C16001 LG Semicon Co.,Ltd. Description 2,097,152 W ORDS x 8 BIT CMOS M ASK ROM Pin Configuration The G M 23C 16001 high performance read only memory is organized as 2,097,152 words by 8 bits and has an access time o f 120ns. It needs no external control clock to assure simple operation.
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GM23C16001
120ns.
GM23C16001
120ns
A0-A20
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Untitled
Abstract: No abstract text available
Text: GM23C16001 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 WORDS x 8 BIT CMOS MASK ROM Pin Configuration Description The G M 23C 16001 high performance Read Only Memory is organized as 2,097,152 words by 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation,
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GM23C16001
120ns.
36-DIP,
GM23C16001
QQ04G3S
00G403b
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3A103
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Pin Configuration The GM23C16001B high performance read only memory is organized as 2,097,152 words by 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation. It is designed to be suitable for use in program memory of
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GM23C16001B
120ns.
GM23C16g
A0-A20
MQS67S7
40ES757
3A103
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Untitled
Abstract: No abstract text available
Text: GM23C16001B LG Semicon Co.,Ltd. 2,097 ,1 5 2 W O R D S x 8 BIT C M O S M A SK R O M Pin Configuration Description The G M 23C 16001B high perform ance read only m em ory is organized as 2,097,152 w ords by 8 bits and has an access tim e o f 120ns. It needs no external
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GM23C16001B
120ns.
16001B
GM23C16001B
A0-A20
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4170A
Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL
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GM71C1000B/BL
GM71C4256B/BL
GM71C4100B/BL
GM71C4100C/CL
71C41OOD/DL
71C4400B/BL
71C4400C/CL
71C4400D/DL
GM71C
800A/AL
4170A
mask ROM
Dynamic RAM 4M x 8
71C4400B
GM23C410
64K x 8 BIT DYNAMIC RAM
Dynamic RAM 64K x 1
static+ram+32kx8
STATIC+RAM+6264
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
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