kmkp
Abstract: b628 BO-63 k44b BV9C MTDD 9l 15a
Text: 4B C6B:6C 4HVHJPYP[L J^RPTKWPJHR Y^VL VWU]PSPY^ XLTXUW |2} 4UZTYLW a7LHYZWLX bv9C< KF ;<K<:K }IFEh D<K8Ch GC8JK@:h N8K<Ih JKFE<h NFF; <K: b~FE> C@=< :P:C< 8E; |@>? I<C@89@C@KP bwFEM<E@<EK KF 8;ALJK K?< ;<K<:K@E> ;@JK8E:< 9P J<EJ@K@M@KP 8;ALJKD<EK GFK<EK@FD<K<I
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89JFIGK
kmkp
b628
BO-63
k44b
BV9C
MTDD
9l 15a
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4506 gh
Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
Text: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:
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86IDG
HI6C96G9d
4506 gh
CB 7805
CW 7805
H6b 25
dk qb
7805 ck
8DAA
wv-cq
BD-9C
KJ 9D
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s41 hall sensor
Abstract: Russian diode Transistor ML614S IC6001 FP99
Text: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM
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DSC0703019CE
s41 hall sensor
Russian diode Transistor
ML614S
IC6001
FP99
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D649
Abstract: CA64 246DH DFJI
Text: :?AED/@EDAED 4@?64D@BC ^WZ_Yc[X \WX] X`_YXc`ab 56C4B:AD:@? >GMTKYOI PGIQ IUTTKIYUWX GWK NOMNR^ OTYKMWGYKJ JK[OIKX YNGY IUSHOTK TKY\UWQ SGMTKYOIX GTJ B;01 IUTTKIYUWX. :T GJJOYOUT YU IUTTKIYO[OY^, SGMTKYOI PGIQX VWU[OJK XOMTGR IUTJOYOUTOTM, KRKIYWUSGMTKYOI OTYKWLKWKTIK XZVVWKXXOUT GTJ
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56C4B
762DEB6C
e12xeikllu
xJG78
/79A7=
9N9B78B;
D649
CA64
246DH
DFJI
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 731 N C ø3,5+ deepth = A H A 4,8 x DIN 46 A 2,8 x 0,8 DIN 46 244 G 8,5 max VWK Aug. T 731 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values
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RTL8201 reference Design
Abstract: W3100A 8051 tcp ip rtl8201 RTL8201 Design W3100 rtl8201 application note tft interface with 8051 realtek 8051 realtek rtl8201 programming
Text: i2Chip W3100A www.i2Chip.com Technical Datasheet v1.1 Description Features G The i2Chip W3100A is an LSI of hardware protocol stack that provides an easy, low-cost solution Description for high-speed Internet connectivity for digital devices Features by allowing
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W3100A
W3100A
P100BASE
P10BASE
RTL8201 reference Design
8051 tcp ip
rtl8201
RTL8201 Design
W3100
rtl8201 application note
tft interface with 8051
realtek 8051
realtek rtl8201 programming
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SD 4060
Abstract: DSE 130 -10A 41 894-222A4
Text: European PowerSemiconductor and Electronic Company Marketing Information T 86 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 M12 A VWK Aug. 1996 T 86 N Elektrische Eigenschaften
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ta 1259 n
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1258 N T 1259 N ø36 ø36 C ø36 A A ø36 ø3,5 x 2 deep on both sides HK 4,8 x 0,8 2 C G plug 2,8 x 0,8 3,5+0,1 x 3,5 deep on both sides HK plug 4,8 x 0,8 G plug 2,8 x 0,8 4 VWK Aug. 1996
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T1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1500 N max.12 ø50 C HK G A ø50 ø3,5x3,5 deep on both sides HK plug A4,8x0,8 G plug A2,8x0,8 74 VWK Aug. 1996 T 1500 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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N1020
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 210 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK June 1996 T 210 N Elektrische Eigenschaften
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T210N
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 210 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK June 1996 T 210 N Elektrische Eigenschaften
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IE-178048-NS-EM1
Abstract: IE-78K0-NS IE-78K0-NS-A
Text: User’s Manual IE-178048-NS-EM1 Emulation Board Target device µPD178048 Subseries Document No. U15928EJ1V0UM00 1st edition Date Published March 2002 N CP(K) Printed in Japan 2002 1991 [MEMO] 2 User’s Manual U15928EJ1V0UM Windows is either a registered trademark or a trademark of Microsoft Corporation in the United States and/or
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IE-178048-NS-EM1
PD178048
U15928EJ1V0UM00
U15928EJ1V0UM
IE-178048-NS-EM1
IE-78K0-NS
IE-78K0-NS-A
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4-1000a
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1258 N T 1259 N ø36 ø36 C ø36 A A ø36 ø3,5 x 2 deep on both sides HK 4,8 x 0,8 2 C G plug 2,8 x 0,8 3,5+0,1 x 3,5 deep on both sides HK plug 4,8 x 0,8 G plug 2,8 x 0,8 4 VWK Aug. 1996
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KL42
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 210 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK June 1996 T 210 N Elektrische Eigenschaften
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DIN 41814-151A4
Abstract: EUPEC T 218 t218n T 218
Text: European PowerSemiconductor and Electronics Company Marketing Information T 218 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. 1996 T 218 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1258 N T 1259 N ø36 ø36 C ø36 A A ø36 ø3,5 x 2 deep on both sides HK 4,8 x 0,8 2 C G plug 2,8 x 0,8 3,5+0,1 x 3,5 deep on both sides HK plug 4,8 x 0,8 G plug 2,8 x 0,8 4 VWK Aug. 1996
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T589N
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 588 N T 589 N ø36 ø30 C C A A ø30 ø3,5 x 2 deep on both sides ø36 HK plug 2,8 x 0,8 2 G plug 2,8 x 0,8 3,5+0,1 x 3,5 deep on both sides HK plug 4,8 x 0,8 G plug 2,8 x 0,8 4 VWK Aug. 1996
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GFM 15A
Abstract: GTO thyristor GTO thyristor powerex 100A gate turn-off thyristor GDM21210 thyristor cp 04 95 thyristor TT 36 N GDM11210 powerex gate turn-off gto THYRISTOR GTO
Text: POQJEREX INC wuiBtex 1SE D m TEmhSI OQOHfc.b'l fi • GDM11210 GDM21210 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Gate Turn-Off (GTO) Thyristor Modules
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GDM11210
GDM21210
BP107,
Amperes/1200
GDM11210,
GDM21210
MAX/10
GFM 15A
GTO thyristor
GTO thyristor powerex
100A gate turn-off thyristor
thyristor cp 04 95
thyristor TT 36 N
powerex gate turn-off gto
THYRISTOR GTO
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RRUS 32 b2
Abstract: RRUS 32 rrus-11 a2
Text: PRELIMINARY Am79C04 A Advanced Micro Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS • IOM 2 Interface — Control and PCM on one bus — Data rate up to 4.096-MHz independent of master clock ■ Adaptive trans-hybrid balance function
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Am79C04
096-MHz
Am79C04/A
Am795XX
PL028
PL032
CD040
PD040
PL044
RRUS 32 b2
RRUS 32
rrus-11 a2
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TDA1579
Abstract: No abstract text available
Text: TDA1579 TDA1579T DECODER FOR TRAFFIC WARNING VWF RADIO TRANSMISSIONS G E N E R A L D ESCRIPTIO N The TDA1579 decoder is fo r radio transmissions having 67 kHz amplitude-moculated subcarriers as used in the German 'Verkehrs W arnfunk' (VWF) tra ffic warning system.
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TDA1579
TDA1579T
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IC AL 6001
Abstract: HC4P5509B-9
Text: HC-5509B HARRIS S E M I C O N D U C T O R ITU CO/Loop Carrier SLIC July 1998 Features Description • Dl Monolithic High Voltage Process The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation Dl
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HC-5509B
HC-5509B
1-800-4-HARR
IC AL 6001
HC4P5509B-9
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Untitled
Abstract: No abstract text available
Text: h a rris S E M I C O N D U C T O R HC5509A1R3060 " SLIC Subscriber Line Interface Circuit Jun e 1997 Features Description • Dl Monolithic High Voltage Process • High Temperature Alarm Output T he H C 4P 5 5 0 9 A 1 R 3 0 6 0 tele ph on e S u b scrib e r
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HC5509A1R3060
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3850 mos
Abstract: GK 087 GEM X 365
Text: IGBT High Speed IXSH50N60B IXSH 50N60BS Short Circuit SOA Capability Test Conditions v CES T j = 25“C to 150°C 600 V v CGR ^ = 25°C to 150°C; R0E = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient ±30 V Maximum Ratings A ^C25 T c = 25°C, limited by leads
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IXSH50N60B
50N60BS
O-247
3850 mos
GK 087
GEM X 365
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Untitled
Abstract: No abstract text available
Text: S e m iconductor HC5509A1R3060 SLIC Subscriber Line Interface Circuit June 1997 Features Description • Dl Monolithic High Voltage Process • High Temperature Alarm Output The HC4P5509A1R3060 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions
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HC5509A1R3060
HC4P5509A1R3060
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