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    GHG DIODE Search Results

    GHG DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    GHG DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTB 00 ATEX 3117

    Abstract: CEAG PTB 00 ATEX 3117 ceag ghg atex ceag ghg 411 ceag ghg 412 GHG 412 PTB 99 ATEX CEAG P413 CEAG PTB 00 ATEX 1040 ATEX 3117
    Text: Betriebsanleitung Explosionsgeschützte Steuergeräte GHG 411 und GHG 412 Operating instructions Explosion-protected control units GHG 411 and GHG 412 Mode d’emploi Boites de commande GHG 411 et GHG 412 pour atmosphères explosives GHG 410 7001 P0001 D/E/F I


    Original     		PDF P0001 PTB 00 ATEX 3117 CEAG PTB 00 ATEX 3117 ceag ghg atex ceag ghg 411 ceag ghg 412 GHG 412 PTB 99 ATEX CEAG P413 CEAG PTB 00 ATEX 1040 ATEX 3117

    ceag ghg 122 3121

    Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
    Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money


    Original     		PDF ambitious531 03/SL D-69412 ceag ghg 122 3121 ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92

    marking code SM diode

    Abstract: GGP DIODE marking SM 98 GGT DIODE GHM DIODE j78 transistor marking CODE J36 diode GGT DIODE ON GGR diode ggk diode
    Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage


    Original     		PDF J130A J150A J160A J170A C5DB03 marking code SM diode GGP DIODE marking SM 98 GGT DIODE GHM DIODE j78 transistor marking CODE J36 diode GGT DIODE ON GGR diode ggk diode

    marking code SM diode

    Abstract: GGR diode marking SM 98 GGT DIODE marking CODE J36 diode GGP DIODE marking code GGt GGT DIODE ON sm 58 b marking code SM CM
    Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage


    Original     		PDF J130A J150A J160A J170A C5DB03 marking code SM diode GGR diode marking SM 98 GGT DIODE marking CODE J36 diode GGP DIODE marking code GGt GGT DIODE ON sm 58 b marking code SM CM

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ


    Original     		PDF 100GB176D

    Untitled

    Abstract: No abstract text available
    Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E


    Original     		PDF 75GB176D 11Typ. 12Typ.

    EZ 532

    Abstract: No abstract text available
    Text: SKM 400GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .P 2 NG O8 D8 .P 2 RGJ O8 .03+ 2 NGO8A * 5(+ %41(/<-+( +=(0-?-(F RHJJ 7 STJ E .0 2 UJ O8 TRJ E BJJ E Y NJ 7 RJ ]+ .0 2 NG O8 SSJ E .0 2 UJ O8 TJJ E BJJ E .P 2 RGJ O8 NNJJ E .03+( 2 NG O8


    Original     		PDF 400GB176D EZ 532

    O41 DIODE

    Abstract: No abstract text available
    Text: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8


    Original     		PDF 145GB176D O41 DIODE

    EZ 532

    Abstract: No abstract text available
    Text: SKM 400GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .P 2 NG O8 D8 .P 2 RGJ O8 .03+ 2 NGO8A * 5(+ %41(/<-+( +=(0-?-(F RHJJ 7 STJ E .0 2 UJ O8 TRJ E BJJ E Y NJ 7 RJ ]+ .0 2 NG O8 SSJ E .0 2 UJ O8 TJJ E BJJ E .P 2 RGJ O8 NNJJ E .03+( 2 NG O8


    Original     		PDF 400GB176D EZ 532

    w4 DIODE

    Abstract: No abstract text available
    Text: SKM 600GA176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 QG P8 D8 .R 2 OGK P8 D8VW .03+ 2 QGP8A * 5(+ %41(/<-+( +=(0-?-(F Trench IGBT Modules SKM 600GA176D 4=+0 OHKK 7 BBK E .0 2 TK P8 UHK E TKK E Y QK 7 OK ¥+ .0 2 QG P8 BKK E .0 2 TK P8


    Original     		PDF 600GA176D w4 DIODE

    bu 3 GDG 125

    Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


    Original     		PDF C398BB02 C398BB03 bu 3 GDG 125 marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode

    marking code SM diode

    Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
    Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


    Original     		PDF DO-214AC C3B05 marking code SM diode GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH

    bfm 2 TERMINAL DIODE

    Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF

    ph 41 zener diode

    Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
    Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


    Original     		PDF DO-214AC C3B05 ph 41 zener diode J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A

    bu 450 GDF

    Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


    Original     		PDF C3B04 bu 450 GDF diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A

    BFM LF

    Abstract: SMCJ12A vishay vishay smcj GENERAL SEMICONDUCTOR MARKING bfm SMCJ5.0A
    Text: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMCJ188CA DO-214AB J-STD-020, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 BFM LF SMCJ12A vishay vishay smcj GENERAL SEMICONDUCTOR MARKING bfm SMCJ5.0A

    general semiconductor marking code GFX

    Abstract: GENERAL SEMICONDUCTOR MARKING bfm SMCG188A GENERAL SEMICONDUCTOR MARKING gfr E1367 GDM 3-17 BFM LF gfx 83 SMCG14A general semiconductor marking code GER
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMCG188CA DO-215AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 general semiconductor marking code GFX GENERAL SEMICONDUCTOR MARKING bfm SMCG188A GENERAL SEMICONDUCTOR MARKING gfr E1367 GDM 3-17 BFM LF gfx 83 SMCG14A general semiconductor marking code GER

    GEK DIODES

    Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF DO-214AB GEK DIODES Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE

    Diode GFK

    Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF DO-214AB Diode GFK GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES

    GENERAL SEMICONDUCTOR SMCJ43A

    Abstract: ghk general semiconductor BFM LF SMCJ5.0A
    Text: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMCJ188CA DO-214AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 GENERAL SEMICONDUCTOR SMCJ43A ghk general semiconductor BFM LF SMCJ5.0A

    Untitled

    Abstract: No abstract text available
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional


    Original     		PDF SMCG188CA J-STD-020, AEC-Q101 DO-215AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GEZ DIODES

    Abstract: GEZ 63 DIODES GEZ 304 DIODES
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


    Original     		PDF E135015 RS-481-A DO214AB UL94V-0 5SMCJ160 5SMCJ160A 5SMCJ170 5SMCJ170A GEZ DIODES GEZ 63 DIODES GEZ 304 DIODES

    Untitled

    Abstract: No abstract text available
    Text: MIC631/32/33 and MIC641/42/43 S rn r _ 'l—- l GlÉjM •-j Ü K G J lP L JM jjw j |l^ KÜi f P j| ^ f ijB n J Step-Up Switching Regulators g g |j|ghg j|i|fl| General Description The MIC631/641, MIC632/642, and MIC633/643 are fixed frequency, hysteretic-mode, step-up boost regulators.


    OCR Scan     		PDF MIC631/32/33 MIC641/42/43 MIC631/641, MIC632/642, MIC633/643 50kHz, MIC63x 150mW)

    M109

    Abstract: No abstract text available
    Text: ¡gHg illlil • I M-109 & M-122 t t e lM M H z i +7 dBm/Higit P M fsnlftion/OPL Vmhm/TS-5 PRINCIPAL SPECIFICATIONS RF/LO Frequency, MHz IF Frequency, MHz M-109 1 -500 DC - 500 7.0 8.5 5 -2 0 0 1 -500 40 25 1 -50 50 - 500 30 18 1 -50 50 - 500 M-122 5 -1 00 0


    OCR Scan     		PDF M-109 M-122 M-109 M-122 MIL-M-28837 23Feb96 M109