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Catalog Datasheet	MFG & Type	PDF	Document Tags
2n5401 toshiba Abstract: No abstract text available Text: 45E T> m TDTTESG GG17773 S TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SH IB A IT0S4 2N5401 (D I S C R E T E / O P T O ) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : v CBO= - 160V, V c e o = -150V	OCR Scan	PDF	GG17773 2N5401 -150V -50nA -50mA, -120V 10nlA, -10mA, 2n5401 toshiba

Catalog Datasheet

MFG & Type

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2n5401 toshiba

Abstract: No abstract text available
Text: 45E T> m TDTTESG GG17773 S TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SH IB A IT0S4 2N5401 (D I S C R E T E / O P T O ) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : v CBO= - 160V, V c e o = -150V

OCR Scan

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GG17773 2N5401 -150V -50nA -50mA, -120V 10nlA, -10mA, 2n5401 toshiba