Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply
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GG0334G
MT5C6401
22-Pin
000334b
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anzac frequency
Abstract: anzac AT-200
Text: M / A - C Ô M INC/ AN ZA C DIV 14E D MMICABSORPTIVEVVA' MODEEAT-20Qg « i f f i B S L 4 2 1 7 7 GG032Et> fl î f '7 * - '7y ~/3 Low Insertion Loss, 1.2 dB Typical -o Fast Switching Speed, 4 ns Typical Ultra Low DC Power Consumption Outstanding Flatness Guaranteed Specifications*
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5b42177
anzac frequency
anzac
AT-200
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KA2210 AMPLIFIER
Abstract: Protector IC For Stereo Power Amplifier KA2210
Text: SAMSUNG SEM ICOND UC TO R INC Tfl GG03Ö7S 1 | TO H*O S O l ’ KA2210 DEI 7 ^ 4 1 4 5 LINEAR INTEGRATED CIRCUIT 5.5W DUAL POWER AMPLIFIER The KA2210 is a monolithic integrated circuit consisting of 2 channel power amplifier. It is suitable for stereo and bridge amplifier application
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KA2210
KA2210
KA2210 AMPLIFIER
Protector IC For Stereo Power Amplifier
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f48c
Abstract: No abstract text available
Text: 17E |]| • PHILIPS E C G INC bbS3*iSÛ GG03714 7 ■ T -74 -0 5-01 E C G 1031 0.5W OTL AUDIO POWER AMPLIFIER sem iconductors ABSOLUTE M AXIMUM RATINGS PACKAGE V „ . 9 V lQ peak . 0.6 A Pt . 0.8 W
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GG03714
ECG1031
bti53'
ECQ1031
f48c
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CS100
Abstract: No abstract text available
Text: SHARP ELEK/ MELEC DIV Photointerrupter 1SE D I fllflGT'ìa GG03177 G I - ' GP1S07 T-41-73 GP1S07 - Subminiature Photointerrupter • ■ Features 1. 2. 3. Ultra-colmpact Capacity: 0.06cc and light PW B mounting type package High sensing accuracy (Slit width: 0.8mm)
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GG03177
GP1S07
T-41-73
---t77
aiaaviaT-41-73
CS100
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KA2210 AMPLIFIER
Abstract: KA2210
Text: SAMSUNG SEMICONDUCTOR INC Tfl DE| 7^4145 GG03Ö7 5 1 | T 0 4 - Ö S O l KA2210 LINEAR INTEGRATED CIRCUIT 5.5W DUAL POWER AMPLIFIER The KA2210 is a monolithic integrated circuit consisting of 2 channel power amplifier. It is suitable for stereo and bridge amplifier application
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KA2210
KA2210
10k235
KA2210 AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: @SPT SPT77Ó O 8-BIT, 1 GSPS FLASH A/D CONVERTER S/G/VAL PROCESS/NG TECHNOLOGIES FEATURES APPLICATIONS Digital Oscilloscopes Transient Capture Radar, EW, ECM Direct RF Down-Conversion 1:2 Demuxed ECL Compatible Outputs Wide Input Bandwidth - 900 MHz Low Input Capacitance -1 5 pF MQUAD
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SPT77Ó
SPT7760
GG033
SPT7760
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OS222
Abstract: DS2223 DS2224 te333
Text: »ALLAS SEMICONDUCTOR CORP 3TE D 5 b lM 1 3 0 00034EL S H i DAL PRELIM INARY DS222X DALLAS SEMICONDUCTOR FEATURES EconoRAM PACKAGE OUTLINE • Low-cost general-purpose 256-bit memory • DS2223 has 256-bit SRAM - D S2224 has 32-bit ROM, 224-bit SRAM • Reduces control, address and data Interface to
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ablM13Q
000342L
DS222X
256-bit
DS2223
DS2224
32-blt
224-bit
OS222
te333
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IC 2864 eeprom
Abstract: 2764 EEPROM DS1225-200 EEPROM 2864 2764 eprom PINOUT ram DS1225 ds1225 DS1225-100 2864 eeprom EEPROM 2864 CMOS
Text: DALLAS SEMICONDUCTOR CORP 3=iE D at.14130 0003364 4 Hi DAL DS1225AB/AD ' 'C ^ i b 3 7 DS1225AB/AD D A LLA S 64K Nonvolatile SRAM SEM ICONDUCTOR FEATURES A PIN DESCRIPTION • Data retention in the absence of Vco • Data Is automatically protected during power
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DS1225AB/AD
28-pln
100ns,
120ns,
150ns,
170ns,
200ns
DS1225
IC 2864 eeprom
2764 EEPROM
DS1225-200
EEPROM 2864
2764 eprom PINOUT
ram DS1225
DS1225-100
2864 eeprom
EEPROM 2864 CMOS
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gm71c4400b
Abstract: No abstract text available
Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d
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GM71C4400B/BL
GMM71C4100BR/BLR
GM71C4400BT/BLT
031MIN
gm71c4400b
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71C4400A
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per
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GQ03455
71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
71C4400A
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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H.294
Abstract: aa2c
Text: INTEGRATED DEVICE 14E D • 4055771 G0Q3472 7 HIGH-SPEED STATIC RAM ORGANIZED AS 32Kx9 ADVANCE INFORMATION IDT 71509 -rwé -73- IH FEATURES: DESCRIPTIO N: • 32K x 9 Parity checking Static RAM The IDT71509 is a 294,912-bit high-speed static RAM organized
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G0Q3472
32Kx9
IDT71509
912-bit
450mW
H.294
aa2c
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tsm 1250
Abstract: CD4A1490 pow-r-blok thyristor bridge ed 4 CD4A1290 1S697 BP107 CD4A1690 CR02AM CR03AM CR04AM
Text: P OWE RE X INC 1SE mMBŒX D • 7£T4b21 DDG3b07 ñ ■ C D 4 A Powerex, Ino., Híllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 »90 D U 3l S C R P O W -R -B L O K
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00Q3b07
BP107,
MAX/10
tsm 1250
CD4A1490
pow-r-blok thyristor bridge ed 4
CD4A1290
1S697
BP107
CD4A1690
CR02AM
CR03AM
CR04AM
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Untitled
Abstract: No abstract text available
Text: POWEREX I NC 1SE D • 7BTMLB1 0 D G 3S 5 3 2 ■ T - 2 .5 ' ^ 2 3 r<M/EREX C C 42 C N 47 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode Center Tap
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BP107,
Amperes/400-1400
MAX/10
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I C N D U C T 0 R , I N C r e s t W I R E L E S S C O M M U N I C A T I O N S TQ9205 2 . 4 - 2 . 5 GHz Am plifier/Switch CO Features T h e T Q 9 2 0 5 is a m onolithic transmit/receive amplifier function designed specifically for spread-spectrum applications in the 2 .4 - 2 .5 G H z IS M band. The receive path
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TQ9205
TQ9205
fl10b21Ã
DD03054
24-Pin
GG03Q25
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4000SC
Abstract: No abstract text available
Text: UPD30401 V R 4000SC 64-Bit Microprocessor Preliminary Hardware User's Manual Publication ID: IEU-1331 Publication Date: December 1, 1992 Company: N E C ELECTRONICS INC Th is title page is provided as a service by Inform ation Handling S ervices and displays
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UPD30401
4000SC
64-Bit
IEU-1331
b427525
SysADI12]
SysADi13]
SCDatai13]
SysADl14]
SCTagl15]
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80c51/31 MHS
Abstract: No abstract text available
Text: October 1992 IlM l 80C31/80C51 DATASHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31/80C51-L : 0 TO 6 MHz WITH 2.7 V < Vcc < 6 V 80C51F : 80C51 WITH PROTECTED ROM 80C31/80C51:0 TO 12 MHz 80C31/80C51-1: 0 T 0 16 MHz 80C31-S/80C51-S : 0 TO 20 MHz FEATURES •
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80C31/80C51
80C31/80C51-L
80C51F
80C51
80C31/80C51
80C31/80C51-1:
80C31-S/80C51-S
80C51)
80C31
80c51/31 MHS
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Untitled
Abstract: No abstract text available
Text: .100" 2.54 mm Header (U. S. Standard Product) { f f mm 1100-29 Right Angle Locking (High Backwall) Right angle locking polarizing headers with preinserted .025” square pins. Allows many design options, when low profile or locked interconnects are required. Mates with
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-29-1X
E-48567
b052557
0DD36Db
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current
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0003bS5
D50433Ã
GG03b5b
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i8237A
Abstract: i8237 i8259a 68C45 Z80 CRT controller micron cmos 1988 interface 8254 with 8086 8086 structure block diagram of 8086 and 8088 M85C30
Text: V L S I TECHNOLOGY INC IflE D H P V L S I T ech n o lo gy, inc. • T3flfl347 0D0324L. S ■ t- ^ VMC10 AND VMC100 SERIES 2-MICRON AND 1.5 MICRON ADVANCED CMOS MEGACELL FAMILY FEATURES FAMILY DESCRIPTION ASIC COMPATIBLE • Library of m icroprocessor peripheral functions
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T3flfl347
0D0324L.
VMC10
VMC100
82C84A
82C88
VSY368C45-YYZ20
VSY382C37-YYZ20
VSY382C50-YYZ20
i8237A
i8237
i8259a
68C45
Z80 CRT controller
micron cmos 1988
interface 8254 with 8086
8086 structure
block diagram of 8086 and 8088
M85C30
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Untitled
Abstract: No abstract text available
Text: Programmable Peripheral PSD311L 3-Volt Single-Chip Microcontroller Peripheral Preliminary Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ 256 Kbits of UV EPROM — Organized as 32K x 8 □ 3.0 to 5.5 Volt Operation
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PSD311L
44-pin
PSD311L-25L
PSD311L-25U
PSD311L-25J
PSD311L-25UI
PSD311L-30J
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Untitled
Abstract: No abstract text available
Text: 1SE D P O W E R E X INC • 72T4b21 QG035G7 4 ■ fOMERSr C D 72 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Current Source Inverter POW-R-BLOK Modules
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72T4b21
QG035G7
BP107,
Amperes/100-1200
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Untitled
Abstract: No abstract text available
Text: pMC-Sierra, Inc. PM7323 RCMP-200 P r e l im in a r y I n f o r m a t io n is su e 1 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEA TU R ES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements
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PM7323
RCMP-200
355x106
300mV
00G3bfll
PM7322
RCMP-800.
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