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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX38V9500 9 .5 ~ 1 0 .Q G H z BAWD 6 W INTERN ALLY MATCHED GaAs FET DESCRIPTION The GFX38V9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 — 10.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF GFX38V9500 MGFX38V9500

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF GFX38V9500 FX38V