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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFK35V2228 1 2 .2 — 12.8GHz BAND 3W INTERNALLY M ATCHED GaAs F E T DESCRIPTION O UTLINE DRAWING The M GFK35V2228 is an internally impedance matched GaAs power FET especially designed fo r use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFK35V2228 GFK35V2228

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V2228 1 2 .2 — 12.8G Hz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed fo r use in 12.2 ~ 12.8 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF GFK35V2228